Toshiba EEPROM 195

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TH58NVG4S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		2GX8	2G	0 Cel						DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				17179869184 bit	2.7 V								18.4 mm		3
TH58NVG5S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel						DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V								18.4 mm		3
TC58NVG0S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			134217728 words		3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel						BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm				1073741824 bit	2.7 V								11 mm		3
TC58DVG02A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	134217728 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	8K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		512				NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58DVM72A1TG00	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			16777216 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16MX8	16M	-40 Cel						DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V								18.4 mm		3
TC58256FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	33554432 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	70 Cel		32MX8	32M	0 Cel	2K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC584000P	Toshiba	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words		5			8	IN-LINE					2.54 mm	70 Cel		512KX8	512K	0 Cel			TIN LEAD			DUAL		R-PDIP-T32	5.25 V	4.8 mm			15.24 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0					42 mm	15000 ns	5
TC58DVM72A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC9WMB1FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2 mA	128 words		2.3		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20		EEPROMs	10	.5 mm	85 Cel		128X8	128	-40 Cel			TIN LEAD	1010XXXR		DUAL	HARDWARE	R-PDSO-G8	5.5 V	.8 mm	100000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	12 ms	I2C	1024 bit	1.8 V			e0				.000005 Amp	2.3 mm
TMM2764AD-15	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6		EPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel			Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T28	5.25 V	5.2 mm			15.24 mm	Not Qualified			65536 bit	4.75 V	LG-MAX		e0					37.7 mm	150 ns	5
TC89122AM	Toshiba	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words					8	SMALL OUTLINE								256X8	256				Tin/Lead (Sn/Pb)			DUAL		R-PDSO-G8	5.5 V					Not Qualified			2048 bit	1.8 V			e0							3
TC58DAM72F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words		3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		8MX16	8M	0 Cel			TIN LEAD			DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V			e0					18.4 mm		3
TC58DVG02D5TAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC9WMC1FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	64 words		2.3		2/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20		EEPROMs	10	.5 mm	85 Cel		64X16	64	-40 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8	3.6 V	.9 mm	100000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified		3-WIRE	1024 bit	1.8 V			e0				.000002 Amp	2.3 mm
TC58V64AFT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	8K	30 mA	8388608 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES			YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm			10.16 mm	Not Qualified			67108864 bit	3 V		512				NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
KHK61VSE480G	Toshiba
TC58DVM92A5TA00	Toshiba	EEPROM	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	20 mA	67108864 words		3	NO	3/3.3	8	SMALL OUTLINE	TSSOP56,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512				NAND TYPE	.00005 Amp	20 mm	40 ns	3	NO
TH58NVG3S0HBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words		3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX8	1G	-40 Cel						BOTTOM		R-PBGA-B67	3.6 V	1 mm			6.5 mm				8589934592 bit	2.7 V								8 mm		3
TC5816TR	Toshiba	EEPROM	COMMERCIAL	40	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words		5			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel			TIN LEAD			DUAL		R-PDSO-G40	5.25 V	1.2 mm			10.16 mm	Not Qualified			16777216 bit	4.75 V	ORGANIZATION : MEMORY CELL ARRAY = 264X8KX8		e0					18.41 mm		5
TC9WMB1AFU(TE12L)	Toshiba
TC58256DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			33554432 words		3.3			8	UNCASED CHIP					2.54 mm	55 Cel		32MX8	32M	0 Cel						UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			268435456 bit	3 V								45 mm		3
TH58NS100DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			134217728 words		3.3			8	UNCASED CHIP					2.54 mm	55 Cel		128MX8	128M	0 Cel						UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			1073741824 bit	3 V								45 mm		3
TC58512FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC584000TR	Toshiba	EEPROM	COMMERCIAL	40	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words		5			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		512KX8	512K	0 Cel			TIN LEAD			DUAL		R-PDSO-G40	5.25 V	1.2 mm			10.16 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0					18.41 mm	15000 ns	5
TC58NVG0S3ETAIB	Toshiba	EEPROM																																																										3
TC58NVG1S3EBAI5	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words		3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES			YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			10 mm	Not Qualified			2147483648 bit	2.7 V		2K				NAND TYPE	.00005 Amp	13 mm	25 ns	3	NO
TC9WMA1FK(TE85L)	Toshiba
TC58V32FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			4194304 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel						DUAL		R-PDSO-G40	3.6 V	1.2 mm			10.16 mm	Not Qualified			33554432 bit	3 V								18.41 mm	35 ns	3
KHK61RSE3T84	Toshiba
TC58257AP-17LV	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words		5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDIP-T28	5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0					37 mm	170 ns	12
TC58256AFT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32MX8	32M	0 Cel						DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V								18.4 mm		3
KXD51RUE960G	Toshiba
TC9WMB2AFU(TE12L,F)	Toshiba
TC9WMB2FK(TE85L,F)	Toshiba																																																					30	260
TC9WMC2FK(TE85L,F)	Toshiba
TC58NS128ADC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			16777216 words		3.3			8	UNCASED CHIP					2.54 mm	55 Cel		16MX8	16M	0 Cel			TIN LEAD			UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			134217728 bit	3 V			e0					45 mm		3
TC58NVG2S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	536870912 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		512MX8	512M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58NVG1S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words		3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES			YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K				NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC58NVG2S3EBAI5	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words		3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES			YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			10 mm	Not Qualified			4294967296 bit	2.7 V		2K				NAND TYPE	.00005 Amp	13 mm	25 ns	3	NO
TC58257AP-20LV	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words		5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDIP-T28	5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0					37 mm	200 ns	12
TC58257AF-25	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE		e0					18.5 mm	250 ns	12
TC58DVG02D5BAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words		3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel						BOTTOM		R-PBGA-B67	3.6 V	1 mm			6.5 mm				1073741824 bit	2.7 V								8 mm		3
TMM2764ADI-15	Toshiba	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE					8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6		EPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel			Tin/Lead (Sn/Pb)			DUAL		R-XDIP-T28						Not Qualified			65536 bit				e0						150 ns	5
TC89122M	Toshiba	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words					8	SMALL OUTLINE								256X8	256				Tin/Lead (Sn/Pb)			DUAL		R-PDSO-G8	5.5 V					Not Qualified			2048 bit	2.7 V			e0							3
TH58512FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	67108864 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58257AF-17LV(TP1)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0					18.5 mm	170 ns	12
TH58NYG4S0FBAID	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX8	2G	-40 Cel						BOTTOM		R-PBGA-B63	1.95 V	1 mm			10 mm				17179869184 bit	1.7 V								11 mm		3
TC9WMA1FK(EL)	Toshiba	EEPROM	OTHER	8	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words		3			8	SMALL OUTLINE, SHRINK PITCH					.5 mm	70 Cel		128X8	128	-30 Cel			TIN LEAD			DUAL		R-PDSO-G8	3.6 V			1 MHz	2 mm	Not Qualified		3-WIRE	1024 bit	2.7 V			e0					2.3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.