Toshiba EEPROM 195

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TC9WMB2AFU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	256 words		2.3		2/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		256X8	256	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	3.6 V	1.3 mm	100000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	12 ms	I2C	2048 bit	1.8 V			e0		.000005 Amp	2.9 mm
TC9WMB1AFK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	128 words		2.3		2/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	EEPROMs	10	.5 mm	85 Cel		128X8	128	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	3.6 V	.9 mm	100000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	12 ms	I2C	1024 bit	1.8 V			e0		.000005 Amp	2.3 mm
KHK61RSE7T68	Toshiba
TC58257AF-20LV(TP2)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	200 ns	12
KHK61RSE480G	Toshiba
TC9WMC1FK(TE85L)	Toshiba
TC58257AP-20	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words		5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDIP-T28	5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE		e0			37 mm	200 ns	12
TC9WMB2FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words		2.3		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	EEPROMs	10	.5 mm	85 Cel		256X8	256	-40 Cel			TIN LEAD	1010XXXR		DUAL	HARDWARE	R-PDSO-G8	5.5 V	.8 mm	100000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	12 ms	I2C	2048 bit	1.8 V			e0			2.3 mm
TC58V32AFT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	30 mA	4194304 words		5	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G40	5.5 V	1.2 mm			10.16 mm	Not Qualified			33554432 bit	4.5 V		512	e0	NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC9WMB4FU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2.5 mA	512 words		2.3		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		512X8	512	-40 Cel			TIN LEAD	1010DDMR		DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.3 mm	100000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	12 ms	I2C	4096 bit	1.8 V			e0			2.9 mm
TC58DVM92A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512	e0	NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC9WMA1FK(TE85L,F)	Toshiba
TC9WMA1FK	Toshiba	EEPROM	OTHER	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	128 words		3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	EEPROMs	10	.5 mm	70 Cel		128X8	128	-30 Cel			Tin/Lead (Sn/Pb)			DUAL	SOFTWARE	R-PDSO-G8	3.6 V	.9 mm	100000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified		3-WIRE	1024 bit	2.7 V			e0		.000005 Amp	2.3 mm
TC89121AP	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words					8	IN-LINE				2.54 mm			128X8	128				Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			1024 bit	1.8 V			e0			9.6 mm		3
TH58512DC	Toshiba	EEPROM		22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			33554432 words		3.3			8	MICROELECTRONIC ASSEMBLY							32MX8	32M							UNSPECIFIED		R-XXMA-X22	3.6 V					Not Qualified			268435456 bit	3 V							55 ns	3
TC58V64FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words		3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel						DUAL		R-PDSO-G40	3.6 V	1.2 mm			10.16 mm	Not Qualified			67108864 bit	3 V						18.41 mm	35 ns	3
TC9WMC2FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	128 words		2.3		2/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	EEPROMs	10	.5 mm	85 Cel		128X16	128	-40 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8	3.6 V	.9 mm	100000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified		3-WIRE	2048 bit	1.8 V			e0		.000002 Amp	2.3 mm
TC89102P	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			256 words		5			8	IN-LINE				2.54 mm			256X8	256				Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			2048 bit	4.5 V	CONFIGURABLE AS 128 X 16		e0			9.6 mm		5
TH58NS512DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			67108864 words		3.3			8	UNCASED CHIP				2.54 mm	55 Cel		64MX8	64M	0 Cel						UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			536870912 bit	3 V						45 mm	45 ns	3
TC58NVM9S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	67108864 words		3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	512	YES			YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified			536870912 bit	2.7 V		2K		NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TMM2764AD-20	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel			TIN LEAD			DUAL		R-PDIP-T28	5.25 V	5.2 mm			15.24 mm	Not Qualified			65536 bit	4.75 V	LG-MAX		e0			37.7 mm	200 ns	5
TC58DVM92A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	30 mA	67108864 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512		NAND TYPE	.00005 Amp	18.4 mm	35 ns	3	NO
KHK61RSE1T92	Toshiba
TC58NVG0S3AFT05	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	134217728 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K	e0	NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58257AF-25LV	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD			DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	250 ns	12
KHK61VSE960G	Toshiba
TH58V128FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		16MX8	16M	0 Cel	1K	YES			YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm			10.16 mm	Not Qualified			134217728 bit	3 V		512		NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC58V64DC	Toshiba	EEPROM	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			8388608 words		3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		8MX8	8M	0 Cel			TIN LEAD			UNSPECIFIED		X-XXMA-X22	3.6 V					Not Qualified			67108864 bit	3 V			e0				35 ns	3
TC58128FTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	3 V		512		NAND TYPE	.0001 Amp	18.4 mm	45 ns	3	NO
KXD5YLN13T84	Toshiba
TC9WMB2AFU(TE12L)	Toshiba
TH58BVG4S0HTA20	Toshiba	EEPROM																																																							3
TC581282AXB	Toshiba	EEPROM	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	Flash Memories		.8 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	TIN LEAD		YES	BOTTOM		R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified			134217728 bit	2.7 V		512	e0	NAND TYPE	.0001 Amp	10 mm	35 ns	3	NO
KXD51RUE1T92	Toshiba
T58V64ADC	Toshiba	EEPROM	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS			8388608 words		3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		8MX8	8M	0 Cel			TIN LEAD			UNSPECIFIED		X-XXMA-X22	3.6 V					Not Qualified			67108864 bit	3 V			e0					3
TC5832FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words		5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel						DUAL		R-PDSO-G40	5.5 V	1.2 mm			10.16 mm	Not Qualified			33554432 bit	4.5 V						18.41 mm		5
TC58NVM9S3ETAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	67108864 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	512	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		2K		NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58DVG02D5TA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K		NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58DVM82A1XBJ1	Toshiba	EEPROM	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	16K	30 mA	33554432 words		3.3	NO	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	Flash Memories		.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)		YES	BOTTOM		R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified			268435456 bit	2.7 V		512	e0	NAND TYPE	.00005 Amp	10 mm	35 ns	3	NO
TC89121P	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words					8	IN-LINE				2.54 mm			128X8	128				Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			1024 bit	2.7 V			e0			9.6 mm		3
TC58NS256ADC	Toshiba	EEPROM	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			33554432 words		3.3			8	MICROELECTRONIC ASSEMBLY				2.54 mm	55 Cel		32MX8	32M	0 Cel			TIN LEAD			UNSPECIFIED		R-XXMA-X22	3.6 V	.84 mm			37 mm	Not Qualified			268435456 bit	3 V			e0			45 mm		3
TC5816AFTI	Toshiba	EEPROM	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			2097152 words		5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel						DUAL		R-PDSO-G40	5.5 V	1.2 mm			10.16 mm	Not Qualified			16777216 bit	4.5 V						18.41 mm	50 ns	5
TC5816FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words		5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel			TIN LEAD			DUAL		R-PDSO-G40	5.25 V	1.2 mm			10.16 mm	Not Qualified			16777216 bit	4.75 V	ORGANIZATION : MEMORY CELL ARRAY = 264X8KX8		e0			18.41 mm		5
TC58DVM82A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	33554432 words		3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V		512	e0	NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58DVM72A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			16777216 words		3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX8	16M	-40 Cel			TIN LEAD			DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V			e0			18.4 mm		3
TC9WMC1FU(TE12L,F)	Toshiba
TC58NVM9S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	67108864 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	512	YES			YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		2K		NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC89113P	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			512 words		5			8	IN-LINE				2.54 mm			512X8	512				Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			4096 bit	4.5 V			e0			9.6 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.