Toshiba EEPROM 195

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58V64BFT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	8K	30 mA	8388608 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm			10.16 mm	Not Qualified			67108864 bit	2.7 V		512	e0	NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC58V64AFTI	Toshiba	EEPROM	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.8 mm	85 Cel		8MX8	8M	-40 Cel			TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10.16 mm	Not Qualified			67108864 bit	3 V			e0			18.41 mm		3
TC9WMB4FU(TE12L,F)	Toshiba
TC58257AF-17LV(TP2)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD		DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	170 ns	12
TC58257AP-25	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words		5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD		DUAL		R-PDIP-T28	5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE		e0			37 mm	250 ns	12
TC58DVM82F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			33554432 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32MX8	32M	0 Cel			TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V			e0			18.4 mm		3
TC58V32DC	Toshiba	EEPROM	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			4194304 words		3.3			8	MICROELECTRONIC ASSEMBLY						55 Cel		4MX8	4M	0 Cel					UNSPECIFIED		R-XXMA-X22	3.6 V					Not Qualified			33554432 bit	3 V							35 ns	3
TC9WMA2FK(TE85L)	Toshiba
TC9WMC1FK(TE85L,F)	Toshiba
TC58NVG2S0FTAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	536870912 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		4K		NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC89121AM	Toshiba	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words					8	SMALL OUTLINE								128X8	128				Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8	5.5 V					Not Qualified			1024 bit	1.8 V			e0					3
TC584000F	Toshiba	EEPROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel		512KX8	512K	0 Cel			TIN LEAD		DUAL		R-PDSO-G32	5.25 V	2.8 mm			10.7 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0			20.6 mm	15000 ns	5
TC58DVG02A5TAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			134217728 words		3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V						18.4 mm		3
TC89101P	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words		5			8	IN-LINE					2.54 mm			128X8	128				Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			1024 bit	4.5 V	CONFIGURABLE AS 64 X 16		e0			9.6 mm		5
KCD51LUG3T84	Toshiba
TH58BVG4S0HTAK0	Toshiba	EEPROM																																																							3
TC89112P	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			256 words		5			8	IN-LINE					2.54 mm			256X8	256				Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			2048 bit	4.5 V			e0			9.6 mm		5
TC582562AXB	Toshiba	EEPROM	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	30 mA	33554432 words		3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories		.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B63	3.6 V	1.2 mm			9 mm	Not Qualified			268435456 bit	2.7 V		512	e0	NAND TYPE	.0001 Amp	11 mm	35 ns	3	NO
TC9WMC2FU(TE12L,F)	Toshiba
KHK61VSE1T92	Toshiba
TC9WMB2AFK(TE85L,F)	Toshiba
TC58NVG2S0FTA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		512MX8	512M	0 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				4294967296 bit	2.7 V						18.4 mm		3
TC58512FTI	Toshiba	EEPROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	-40 Cel	4K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512	e0	NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58V64ADC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			8388608 words		3.3			8	UNCASED CHIP					2.54 mm	55 Cel		8MX8	8M	0 Cel					UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			67108864 bit	3 V						45 mm	35 ns	3
TC89122AP	Toshiba	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			256 words					8	IN-LINE					2.54 mm			256X8	256				Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T8	5.5 V	4.85 mm			7.62 mm	Not Qualified			2048 bit	1.8 V			e0			9.6 mm		3
TC58257AF-25LV(TP1)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD		DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	250 ns	12
TC58128AFTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V		512	e0	NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58128DC	Toshiba	EEPROM	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words		3.3			8	UNCASED CHIP					2.54 mm	55 Cel		16MX8	16M	0 Cel			Tin/Lead (Sn/Pb)		UPPER		R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			134217728 bit	3 V			e0			45 mm	35 ns	3
TC9WMA2FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2.5 mA	262144 words		2.7		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20		EEPROMs	10	.5 mm	85 Cel		256KX8	256K	-40 Cel			TIN LEAD		DUAL	SOFTWARE	S-PDSO-G8	5.5 V	.7 mm	100000 Write/Erase Cycles	.5 MHz	2 mm	Not Qualified	12 ms	3-WIRE	2097152 bit	1.8 V			e0		.000005 Amp	2.3 mm
TC58257AF-20LV(TP1)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD		DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	200 ns	12
TC58257AF-20LV	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD		DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	200 ns	12
TC9WMB2FK(TE85L)	Toshiba
TC58128AFT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16777216 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16MX8	16M	0 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V						18.4 mm	35 ns	3
KHK61RSE960G	Toshiba
TC58DAM72A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words		3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		8MX16	8M	0 Cel			TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V			e0			18.4 mm		3
TH58100FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	134217728 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		512		NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58DYG02A5TA00	Toshiba	EEPROM	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			134217728 words		1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel		128MX8	128M	0 Cel					DUAL		R-PDSO-G48	1.95 V	1.2 mm			12 mm				1073741824 bit	1.7 V						18.4 mm		3
TC9WMB2AFK(TE85L)	Toshiba
KHK61VSE3T84	Toshiba
TC58V32ADC	Toshiba	EEPROM	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			4194304 words		3.3			8	MICROELECTRONIC ASSEMBLY						55 Cel		4MX8	4M	0 Cel					DUAL		R-XDMA-N22	3.6 V					Not Qualified			33554432 bit	3 V							35 ns	3
TC9WMC2FK(TE85L)	Toshiba
TC58DVG02D5BAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words		3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K		NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TMM2764ADI-20	Toshiba	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE					8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6		EPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel			Tin/Lead (Sn/Pb)		DUAL		R-XDIP-T28						Not Qualified			65536 bit				e0				200 ns	5
KCD51LUG1T92	Toshiba
TC5832DC	Toshiba	EEPROM	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS			4194304 words		5			8	MICROELECTRONIC ASSEMBLY						55 Cel	3-STATE	4MX8	4M	0 Cel					UNSPECIFIED		R-XXMA-X22	5.5 V					Not Qualified			33554432 bit	4.5 V								5
TC58DAM82F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			33554432 words		3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32MX8	32M	0 Cel			TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V			e0			18.4 mm		3
TH58NVG1S3AFT05	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		2K	e0	NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58257AF-20LV(EL)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel			TIN LEAD		DUAL		R-PDSO-G28	5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0			18.5 mm	200 ns	12

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.