EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M24M01-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	262144 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2097152 bit	1.8 V			e4	40	260		.000003 Amp	4.9 mm
24LC256T-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO		32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3				.000001 Amp	4.9 mm
24LC256-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.6		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	40	260		.0000015 Amp	5.26 mm		4.5
XCF01SVOG20C0100	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			1MX1	1M	-40 Cel				DUAL			R-PDSO-G20		3.6 V	1.19 mm			4.4 mm				1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL			NOT SPECIFIED	NOT SPECIFIED			6.5024 mm
25AA1024-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	5			8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm	Not Qualified	6 ms	SPI	8388608 bit	4.5 V	OPERTAES WITH 2.5VMIN @ 10MHZ		e3	40	260		.000012 Amp	5.26 mm		5
DS2431/TR	Dallas Semiconductor	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn)		BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3	NOT SPECIFIED	250						NO
DS2431/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD		BOTTOM			R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e0
DS2431+T&R	Analog Devices	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed		BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3		250						NO
CAT24C512HU5IGT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				100	.5 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260			3 mm
XCF16PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	16777216 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	20	.8 mm	85 Cel			16MX1	16M	-40 Cel		Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified			16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE		9 mm
XCF01SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			1MX1	1M	-40 Cel		MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V			e3					6.5024 mm
24LC256-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		4.5
CAT25128VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260		.000001 Amp	4.9 mm
DS2431	Maxim Integrated	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Tin/Lead (Sn/Pb)		BOTTOM			R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e0	20	240
DS2431+	Analog Devices	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed		BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3		250						NO
CAT24C04WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3		1.8/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260		.000001 Amp	4.9 mm
M24256-BWMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e4	30	260		.000002 Amp	4.9 mm
AT24CM01-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	NO	OPEN-DRAIN	128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e4	40	260		.000001 Amp	4.4 mm
M95M01-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e4	30	260		.000003 Amp	4.9 mm
AT28C64B-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3		245		.0001 Amp	13.97 mm	150 ns	5	YES
CAT24C02TDI-GT3A	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			2KX1	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260		.000001 Amp	2.9 mm
24AA64T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000001 Amp	2.9 mm		4.5
DS2431GA+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.25		EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE	R-XBCC-B2		5.25 V	.8 mm	50000 Write/Erase Cycles		3.5 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4					6.5 mm			NO
24LC256-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	40	260		.000005 Amp	4.4 mm		4.5
AT24C128C-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4		260		.000006 Amp	4.925 mm		3
24LC64T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	30	260		.000001 Amp	4.9 mm		4.5
24LC256-I/SNREL	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	ISO/TS-16949	GULL WING	SERIAL	SYNCHRONOUS	.4 mA	32768 words	4.5	NO		8	SMALL OUTLINE	SOP8,.24			200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	NO	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES	64	e3	30	260		.0000015 Amp	4.9 mm			YES
93LC56BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	8	EEPROMs	200	.95 mm	85 Cel			128X16	128	-40 Cel		Matte Tin (Sn)		DUAL		SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260		.000001 Amp	2.9 mm
24LC256T-I/SNRVE	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.6			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ						.0000015 Amp	4.9 mm		3.6
AT28HC64B-70SU	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		DUAL	1		R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		65536 bit	4.5 V		64	e3	30	260		.0001 Amp	17.9 mm	70 ns	5	YES
25LC640A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
M24512-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			e4		260		.000001 Amp	4.9 mm
24LC32AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	4.5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		MATTE TIN	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e3		260		.000001 Amp	2.9 mm		4.5
24LC256T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.6		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	40	260		.0000015 Amp	5.26 mm		4.5
AT28C256-15PU	Microchip Technology	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T28		5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3				.0002 Amp	37.0205 mm	150 ns	5	YES
25LC1024-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		Flash Memories	200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3	40	260	NOR TYPE	.00002 Amp	5.26 mm		5
AT24CM01-SSHD-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5		2.7/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel	NO	OPEN-DRAIN	128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e4	40	260		.000001 Amp	4.925 mm
AT28C256-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3	40	245		.0002 Amp	13.97 mm	150 ns	5	YES
24AA02UIDT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	2.9 mm		5
24LC01BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3		260		.000001 Amp	2.95 mm		5
25LC256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	32768 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3				.000001 Amp	9.271 mm		2.5
24LC64T-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000001 Amp	4.9 mm
AT24C256C-XHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES 1.7V TO 5.5V @0.4MHZ		e4				.000006 Amp	4.4 mm		3
24LC02B-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
25LC512-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz		e3	30	260		.00001 Amp	4.9 mm		5
AT24CM01-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	40	1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4	40	260		.000001 Amp	4.925 mm		5
24LC64T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000001 Amp	3 mm		4.5
25LC256T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			32KX8	32K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		4.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.