EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24LC64T-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	4.4 mm		4.5
AT24MAC402-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260		.000006 Amp	4.925 mm		2.5
DS28EC20+	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS		WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-XBCY-W3		5.25 V		200000 Write/Erase Cycles			Not Qualified		1-WIRE	20480 bit	4 V			e3		250
XCF01SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		1.8/3.3,3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			1MX1	1M	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
24LC64FT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000001 Amp	2.9 mm		5
AT25M02-SSHD-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm		5 ms	SPI	2097152 bit	2.5 V			e4				.000003 Amp	4.9 mm		3
M24C02-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260		.000001 Amp	3 mm
25LC640-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3		260		.000001 Amp	4.9 mm
M24M01-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	1048576 bit	1.8 V			e4	30	260			4.4 mm
25LC256-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel		Matte Tin (Sn) - annealed			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3	40	260		.000001 Amp	5.245 mm		2.5
XCF02SVO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			2MX1	2M	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V			e0	30	225			6.5024 mm
AT24CS01-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3	30	260		.000001 Amp	2.9 mm		5
AT25M02-SSHD-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm		5 ms	SPI	2097152 bit	2.5 V			e4	40	260		.000003 Amp	4.9 mm		3
24LC01BT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
25LC1024-E/SM16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5			8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm		6 ms	SPI	1048576 bit	2.5 V	ALSO OPERATES AT 10MHZ		e3	40	260		.00002 Amp	5.26 mm		5
AT24CM02-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		OPEN-DRAIN	256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		10 ms	I2C	2097152 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz AND 1.7V TO 5.5V @ 0.1MHz		e4	40	260		.000003 Amp	4.9 mm		3
M95M02-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		262144 words				8	SMALL OUTLINE					1.27 mm	125 Cel			256KX8	256K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	2097152 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm
AT28C256-20FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4		EEPROMs		1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	200 ns	5	YES
M95M01-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	16 MHz	3 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e4	30	260		.000001 Amp	4.4 mm
24LC256T-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.6		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	40	260		.0000015 Amp	5.26 mm		4.5
93LC46BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3				.000001 Amp	2.95 mm
24LC08B-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
AT25128B-XHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz		e4		260		.000005 Amp	4.4 mm		5
M24C16-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e4	30	260		.000002 Amp	4.9 mm
24LC16BT-I/SNRVE	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	30	260			4.9 mm
AT24C02C-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	1.7 V			e4		260		.000006 Amp	4.4 mm		2.5
M95M01-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	4 ms	SPI	1048576 bit	2.5 V			e4	30	260		.000002 Amp	4.9 mm
24FC1025-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm		2.5
M93C46-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	64 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e4	30	260		.00001 Amp	4.9 mm
DS28E07Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				10	.65 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			DUAL		HARDWARE	S-PDSO-N6	1	5.25 V	.8 mm	10000 Write/Erase Cycles		3 mm			1-WIRE	1024 bit	3 V			e3	30	260			3 mm		3
M95512-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V			e4	30	260		.000005 Amp	4.4 mm
M95640-WMN6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		20 MHz	3.9 mm		5 ms	SPI	65536 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words	5			8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		65536 bit	4.5 V			e3	40	245		.0001 Amp	13.97 mm	150 ns	5
M24M02-DRCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	262144 words	2.5		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8(UNSPEC)		EEPROMs	200		85 Cel			256KX8	256K	-40 Cel		TIN SILVER COPPER	1010DMMR		BOTTOM		HARDWARE	R-PBGA-B8		5.5 V	.58 mm	4000000 Write/Erase Cycles	1 MHz	2.011 mm	Not Qualified	10 ms	I2C	2097152 bit	1.8 V			e1	30	260		.000003 Amp	3.556 mm
24AA256-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO		32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260		.000001 Amp	4.9 mm
25LC1024-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3	40	260	NOR TYPE	.00002 Amp	6 mm		5
DS28E07+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL				10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM		HARDWARE	O-XBCY-T3		5.25 V		10000 Write/Erase Cycles					1-WIRE	1024 bit	3 V			e3		250					3
24LC04B-I/SN	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		Matte Tin (Sn)	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
25LC512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	20 MHz	7.92 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz		e3				.00001 Amp	9.271 mm		5
XCF02SVO20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			2MX1	2M	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V			e0					6.5024 mm
24LC128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5
24LC01B/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		OPEN-DRAIN	128X8	128	0 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V			e3	30	260		.0001 Amp	4.9 mm		5
24AA256UIDT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ		e3	30	260		.000001 Amp	4.9 mm		4.5
24LC16BT-I/SN16KVAO	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE	SOP8,.25			200	1.27 mm	85 Cel			2KX8	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	16384 bit	2.5 V			e4				.000001 Amp	4.9 mm	900 ns	5
M95512-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	2.5 V			e4	40	260		.000005 Amp	4.9 mm
24LC64-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000001 Amp	5.245 mm
DS28E05R+T	Analog Devices	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		64 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.95 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G3	1	3.63 V	1.12 mm			1.3 mm			1-WIRE	64 bit	2.75 V			e3	30	260			2.92 mm
AT24MAC402-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3				.000006 Amp	2.9 mm		2.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.