EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24LC04BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	512 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO		512X8	512	-40 Cel			MATTE TIN	1010XXMR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3		260		.000005 Amp	2.9 mm
M24256-BFDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	32768 words	1.8		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			32KX8	32K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e4	30	260		.000001 Amp	4.4 mm
24LC1025T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	131072 words	3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			Matte Tin (Sn) - annealed	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	40	260		.000005 Amp	5.26 mm		3
AT28HC256-90JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel		NO	MATTE TIN			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3	40	245		.0003 Amp	13.97 mm	90 ns	5	YES
24LC512T-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel			MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3		260		.000001 Amp	5.245 mm
AT24MAC402-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		3 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260		.000006 Amp	3 mm		2.5
DS28E07Q+U	Analog Devices	EEPROM		6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1024 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37			10	.95 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel						DUAL		HARDWARE	S-PDSO-N6		5.25 V	.8 mm	10000 Write/Erase Cycles		3 mm			1-WIRE	1024 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE							3 mm		3
93LC46BT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		2 mA	64 words	3		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel			MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3	30	260		.000001 Amp	4.9 mm
M24C32-FMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		5 mA	4096 words	1.8		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			4KX8	4K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V			e4	30	260		.000001 Amp	3 mm
M95512-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	65536 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	4 ms	SPI	524288 bit	1.8 V			e4	30	260		.000001 Amp	4.9 mm
24CW1280T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		1 mA	16384 words	1.8			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	131072 bit	1.6 V			e3				.000001 Amp	2.95 mm		1.8
24LC32A-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	5			8	SMALL OUTLINE				200	1.27 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel			Matte Tin (Sn) - annealed			DUAL			R-PDSO-G8	1	5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260			5.26 mm
MT29F8G08ABACAWP-IT:C	Micron Technology	EEPROM CARD	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20				.5 mm	85 Cel			1GX8	1G	-40 Cel	4K	YES			YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				8589934592 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	18.4 mm		2.7	NO
24AA256T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	30	260		.000005 Amp	4.9 mm		2.5
93LC46B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1.5 mA	64 words	4.5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel			64X16	64	0 Cel			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3				.000001 Amp	9.271 mm		4.5
M24256-DFMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2.5 mA	32768 words	1.8		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel			32KX8	32K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e4	30	260		.000001 Amp	3 mm
M24C32-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	4096 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			4KX8	4K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			e4	30	260		.000001 Amp	4.4 mm
24AA1025T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	131072 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e3	30	260		.000005 Amp	4.9 mm		2.5
CAT24C128HU4IGT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	1	EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel			NICKEL PALLADIUM GOLD			DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ		e4	30	260		.000002 Amp	3 mm		3.3
M24512-DFMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		5 mA	65536 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel			64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	524288 bit	1.7 V			e4	30	260			3 mm		5
24LC128T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel			Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260		.000005 Amp	4.4 mm		4.5
24C01C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel			MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	1 ms	I2C	1024 bit	4.5 V			e3				.000005 Amp	9.271 mm		5
AT24C01C-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	NO	OPEN-DRAIN	128X8	128	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	1024 bit	1.7 V	ALSO HAS 1 MHZ CLOCK FREQ AT 2.5V AND 5V SUPPLY	8	e4				.000006 Amp	4.925 mm		2.5	YES
DS2431GB+T	Analog Devices	EEPROM	INDUSTRIAL	2			PLASTIC/EPOXY	YES	1	CMOS			SERIAL	ASYNCHRONOUS			256 words	3.3		3/5	4		SURF MNT 2,.14X.2		EEPROMs	40		85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel		NO	NICKEL PALLADIUM GOLD					HARDWARE			5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4								NO
M24256-BRMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		5 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e4				.000001 Amp	4.9 mm
DS2431GA+U	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS			1024 words	3.3		3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.25		EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		NO	NICKEL GOLD PALLADIUM			BOTTOM		HARDWARE	R-XBCC-B2		5.25 V	.8 mm	50000 Write/Erase Cycles		3.5 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS							6.5 mm			NO
AT24CM01-SHD-T-989	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	131072 words	5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	NO	OPEN-DRAIN	128KX8	128K	-40 Cel				1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	2.16 mm	1000000 Write/Erase Cycles	1 MHz	5.24 mm		5 ms	I2C	1048576 bit	2.5 V							.000001 Amp	5.29 mm		5
AT28C256-15LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	NO LEAD	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs		1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel		NO	TIN LEAD			QUAD			R-CQCC-N32		5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	13.97 mm	150 ns	5	YES
M24C04-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			512X8	512	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e4	30	260		.000001 Amp	4.9 mm
M24C16-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e4		260		.000001 Amp	4.9 mm		2.5
24AA025UID-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel			MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260		.000001 Amp	4.9 mm		5
24LC1025-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	131072 words	3		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		3
24LC16B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	2KX8	2K	0 Cel			MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e3				.0001 Amp	9.46 mm		5
25AA256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS		6 mA	32768 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			32KX8	32K	-40 Cel			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3				.000001 Amp	9.271 mm		2.5
DS2431G+U	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS			1024 words	3.3		3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ		EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		NO	NICKEL PALLADIUM GOLD			BOTTOM		HARDWARE	S-XBCC-B2	1	5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4					6 mm			NO
M24C08-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			1KX8	1K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e4	30	260		.000001 Amp	4.9 mm
24FC256-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	30	260		.000005 Amp	4.9 mm		2.5
DS28E07+T	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS			1024 words				1	CYLINDRICAL				10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel			Matte Tin (Sn) - annealed			BOTTOM		HARDWARE	O-XBCY-T3		5.25 V		10000 Write/Erase Cycles					1-WIRE	1024 bit	3 V			e3		250					3
24AA64-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel			MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3				.000001 Amp	4.9 mm
AT24C64BN-10SU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	3		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.7 V			e3	40	260		.000002 Amp	4.9 mm		3
AT24CS01-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	40	260		.000001 Amp	4.925 mm		5
M24512-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			65536 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08X.12,20			50	.5 mm	125 Cel		TOTEM POLE	64KX8	64K	-40 Cel						DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	524288 bit	1.8 V								3 mm		5
X28HC256JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel			MATTE TIN			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3	30	260			13.97 mm	120 ns	5
24LC02B-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			256X8	256	-40 Cel			Matte Tin (Sn)	1010XXXR		DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	40	260		.000001 Amp	4.9 mm
ST25DV04KC-IE6S3	STMicroelectronics	EEPROM																																																													12
24AA024-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	30	260		.000005 Amp	4.9 mm		2.5
24AA16T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel			2KX8	2K	-40 Cel			MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3		260		.000005 Amp	2.95 mm		2.5
24LC32AT-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			4KX8	4K	-40 Cel			Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.