EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C256-25TC	Atmel	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	3			10000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit			64	e0		240	.0002 Amp		250 ns		YES
AT28C256E-15SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240	.0002 Amp	17.9 mm	150 ns	5	YES
AT28C256E-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28C256F-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240	.0002 Amp	11.8 mm	200 ns	5	YES
AT28C64B-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		240	.0001 Amp	17.9 mm	200 ns	5	YES
AT28C64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.0001 Amp	13.97 mm	250 ns	5	YES
AT28C64X-25PC	Microchip Technology	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28	1	5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	1 ms		65536 bit	4.5 V	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE		e0			.0001 Amp	36.95 mm	250 ns	5	YES
AT28HC256-12JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0003 Amp	13.97 mm	120 ns	5	YES
AT28HC64B-55JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.04 Amp	13.97 mm	55 ns	5	YES
AT28LV64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	3.63 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		225	.00002 Amp	13.97 mm	200 ns	3	YES
AT28LV64B-20TC	Atmel	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	3	3.63 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		240	.00002 Amp	11.8 mm	200 ns	3	YES
AT93C46-10SA-5.0C	Atmel	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		64X16	64	-40 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V			e0			.00003 Amp	4.9 mm
AT93C46-10SI-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.7		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V	DATA RETENTION 100 YEARS		e0			.0000001 Amp	4.9 mm
AT93C46-10TI-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V	DATA RETENTION 100 YEARS		e0			.00001 Amp	4.4 mm
AT93C46A-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V	3-WIRE SERIAL INTERFACE		e0			.00002 Amp	9.271 mm
AT93C46A-10TI-2.7	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		64X16	64	-40 Cel		Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V			e0	30	240	.00002 Amp	4.4 mm
AT93C56-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	3.3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	70 Cel	3-STATE	128X16	128	0 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	3-WIRE SERIAL INTERFACE		e0			.00001 Amp	9.59 mm
BR24A16FJ-WME2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	105 Cel		1KX8	1K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.775 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
BR24C02	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	3.7 mm	10000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	25 ms	I2C	2048 bit	2.7 V	HARDWARE AND SOFTWARE WRITE PROTECTION; 2 WIRE SERIAL INTERFACE; 10 YEARS DATA RETENTION			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	9.3 mm
BR24C64F	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	SMALL OUTLINE, LOW PROFILE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.6 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	2.7 V			e2			.000003 Amp	5 mm
BR24G02FVM-3GTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16			40	.65 mm	85 Cel	3-STATE	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm		5 ms	I2C	2048 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm		2.5
BR24G02FVT-3AGE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		256X8	256	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	2048 bit	1.6 V	1.7V AT 1MHZ			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
BR24G02NUX-3ATTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		256X8	256	-40 Cel				DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms	I2C	2048 bit	1.6 V	1.7V AT 1MHZ			NOT SPECIFIED	NOT SPECIFIED		3 mm
BR24G04FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		512X8	512	-40 Cel				DUAL		R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	4096 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G04FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
BR24G08FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5			1	SMALL OUTLINE	SOP8,.25			40	1.27 mm	85 Cel	3-STATE	8KX1	8K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.8 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	8192 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm		2.5
BR24G128FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words				8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		16KX8	16K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G128FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm		2.5
BR24G16FJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5			8	SMALL OUTLINE, LOW PROFILE					1.27 mm	85 Cel		2KX8	2K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR24G16FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			40	.65 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel		TIN	1010MMMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	16384 bit	1.6 V			e3			.000002 Amp	4.4 mm		3
BR24G16NUX-3TTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			40	.5 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel		TIN	1010MMMR	DUAL	SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.6 V			e3			.000002 Amp	3 mm		3
BR24G1M-3A	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	4.5 mA	131072 words			1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128KX8	128K	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V	ROHM-S-A0000225889 REF SEATED HTCONSIDER			NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	9.3 mm
BR24G256FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	2.5			8	SMALL OUTLINE, LOW PROFILE	SOP8,.25			40	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm		2.5
BR24G32FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words				8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4KX8	4K	-40 Cel		TIN		DUAL		R-PDSO-G8		5.5 V	.9 mm		.4 MHz	2.8 mm		5 ms	I2C	32768 bit	1.6 V			e3				2.9 mm
BR24G512FJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.5			8	SMALL OUTLINE, LOW PROFILE					1.27 mm	85 Cel		64KX8	64K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	524288 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR24G512FVT-5AE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	85 Cel		64KX8	64K	-40 Cel		PURE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	1 MHz	3 mm		3.5 ms	I2C	524288 bit	1.6 V				10	260	.000005 Amp	4.4 mm
BR24G64FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words				8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		8KX8	8K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	65536 bit	1.7 V	1.6V-5.5V OPERATES WITH 0.4MHZ			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G64FVM-3GTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16			40	.65 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm		5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm		2.5
BR24G64FVT-3AGE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		8KX8	8K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
BR24G64NUX-5TR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		8KX8	8K	-40 Cel				DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
BR24H32ANUX-5ACTR	ROHM	EEPROM
BR24H32FVT-5ACE2	ROHM	EEPROM																															PURE TIN					1														10	260
BR24L02-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X8	256	-40 Cel		Tin/Copper (Sn/Cu)	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e2	10	260	.000002 Amp	9.3 mm
BR24L02NUX-WTR	ROHM	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
BR24L04FV-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		512X8	512	-40 Cel		TIN COPPER	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.5 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e2	10	260	.000002 Amp	4.4 mm
BR24L04FVM-WTR	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	40	.65 mm	85 Cel		512X8	512	-40 Cel		TIN COPPER	1010DDMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.095 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e2	10	260	.000002 Amp	2.9 mm
BR24L08FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	2 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		1KX8	1K	-40 Cel		TIN COPPER	1010DMMR	DUAL	HARDWARE	R-PDSO-J8	1	5.5 V	1.775 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e2	10	260	.000002 Amp	4.9 mm
BR24L32FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-40 Cel		TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-J8	1	5.5 V	1.775 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V			e2	10	260	.000002 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.