EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
BR25G640FJ-3GE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		20 MHz	3.9 mm		5 ms	SPI	65536 bit	4.5 V	ALSO OPERATES AT 1.6V WITH 3MHZ ,1.7V WITH 5MHZ AND 2.5V WITH 10MHZ AND SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
BR93G86F-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words				1.8/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		1KX16	1K	-40 Cel				DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		3-WIRE	16384 bit					NOT SPECIFIED	NOT SPECIFIED		.000002 Amp
X28HC64JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	4.5 V		64	e3	30	245		.0002 Amp	13.97 mm	120 ns	5	YES
XC18V02VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel		TIN LEAD		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			2097152 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
AT24C01A-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION = 100 YEARS		e0				.000004 Amp	9.271 mm
AT24C02-10SC	Atmel	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0				.000018 Amp	8.65 mm
AT24C256-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words		3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	I2C	262144 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0				.0000005 Amp	9.271 mm
AT24C512BW-SH25-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		3.6			8	SMALL OUTLINE	SOP8,.3		40	1.27 mm	85 Cel		64KX8	64K	-40 Cel			1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.16 mm	1000000 Write/Erase Cycles	1 MHz	5.24 mm		5 ms	I2C	524288 bit	2.5 V		128					.000006 Amp	5.29 mm		3.6
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240		.0002 Amp	18.4 mm	150 ns	5	YES
AT28C16-20SC	Atmel	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0				.0001 Amp	15.4 mm	200 ns	5	YES
AT28C16F-15PI	Atmel	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	.2 ms		16384 bit	4.5 V	AUTOMATIC WRITE		e0				.0001 Amp	31.9 mm	150 ns	5	YES
AT28C64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225		.0001 Amp	13.97 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225		.00002 Amp	13.97 mm	200 ns	3	YES
BR24G1MFVT-5AE2	ROHM	EEPROM																															PURE TIN					1														10	260
BR24G256FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		40	.65 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	262144 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	4.4 mm		2.5
BR24G32FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		2.5			8	SMALL OUTLINE, LOW PROFILE	SOP8,.25		40	1.27 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	32768 bit	1.6 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	4.9 mm		2.5
BR24G64NUX-3ATTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		8KX8	8K	-40 Cel				DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			3 mm
BR24H16ANUX-5ACTR	ROHM	EEPROM
BR24H256F-5ACE2	ROHM	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words					8	SMALL OUTLINE				1.27 mm	125 Cel		32KX8	32K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		3.5 ms	I2C	262144 bit	1.7 V	SEATED HGT CALCULATED			NOT SPECIFIED	NOT SPECIFIED			5 mm
BR24H256FVT-5ACE2	ROHM	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		32KX8	32K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		3.5 ms	I2C	262144 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			4.4 mm
BR24L02FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel		TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-J8	1	5.5 V	1.775 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e2	10	260		.000002 Amp	4.9 mm
BR24S256F-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.78 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	5 mm
BR24T02FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		1.8/5	8	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.6 V			e3				.000002 Amp	4.9 mm
BR24T1MF-3AME2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words		2.5			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	1048576 bit	1.7 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			5 mm
BR25A256FJ-3MGE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words					8	SMALL OUTLINE, LOW PROFILE				1.27 mm	105 Cel		32KX8	32K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
BR25A512FJ-3MGE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words					8	SMALL OUTLINE, LOW PROFILE				1.27 mm	105 Cel		64KX8	64K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
BR25G256F-3GE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	32768 words		5			8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	20 MHz	4.4 mm		5 ms	SPI	262144 bit	4.5 V	SEATED HT-CALCULATED;also operates with 10mhz @2.5V,5MHZ @1.7V,3MHZ@1.6V			NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	5 mm		5
BR25G512FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX8	64K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.2 mm		10 MHz	3 mm		5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			4.4 mm
BR25H160FVM-2CTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words		5		3/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	100	.65 mm	125 Cel		2KX8	2K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	10 MHz	2.8 mm	Not Qualified	4 ms	SPI	16384 bit	4.5 V	ALSO OPERATES AT 2.5V WITH 5MHZ			NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	2.9 mm
BR9010	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		3		3/5	16	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		64X16	64	-40 Cel		TIN COPPER		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.3 V	3.7 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		4-WIRE	1024 bit	2.7 V	OPERATES IN 5V/3V VCC, 100,000 ERASE/WRITE CYCLES, 10 YEARS DATA RETENTION		e2				.000003 Amp	9.3 mm
BRCF016GWZ-3E2	ROHM	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words					8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		2KX8	2K	-40 Cel				BOTTOM		R-PBGA-B4		5.5 V	.35 mm		1 MHz	.84 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			.86 mm
NMC93C56EN	National Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words		5		5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	100000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V			e0				.00005 Amp	9.817 mm
TC58DVM72A1TG00	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		16777216 words		3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX8	16M	-40 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V								18.4 mm		3
XC17128EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel		Matte Tin (Sn)		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250		.00005 Amp	9.3599 mm
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		Matte Tin (Sn)		QUAD		S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			2097152 bit	3 V			e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XQF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8		1.8/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories	20	.5 mm	125 Cel		32MX1	32M	-55 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G48	3	2 V		20000 Write/Erase Cycles			Not Qualified			33554432 bit	1.65 V			e4	30	260	NOR TYPE			30 ns
5962-3826707MZA	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	131072 words		5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel		128KX8	128K	-55 Cel	NO			DUAL		R-XDFP-F32		5.5 V	3.048 mm	10000 Write/Erase Cycles		11.6586 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0	NOT SPECIFIED	NOT SPECIFIED		.00085 Amp	20.85 mm	120 ns	5	YES
5962-8852505XA	Defense Logistics Agency	EEPROM	MILITARY	28	DIP		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE					125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL				5.5 V					Not Qualified	10 ms		262144 bit	4.5 V			e0						250 ns	5
5962-8852505XX	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel				DUAL		R-GDIP-T28		5.5 V	5.72 mm			15.24 mm	Not Qualified			262144 bit	4.5 V								37.215 mm	250 ns	5
AT17C128-10SI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		5		5	1	SMALL OUTLINE	SOP20,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G20		5.5 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	4.5 V			e0				.002 Amp	12.8 mm	55 ns
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words		5		5	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0				.00015 Amp	9.398 mm	55 ns
AT17F040-30VJI	Microchip Technology	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	4194304 words		3.3		3/3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel		TIN LEAD		QUAD		S-PQCC-J20	2	3.63 V	4.572 mm		33 MHz	8.9662 mm	Not Qualified	.03 ms		4194304 bit	2.97 V			e0			NOR TYPE	.001 Amp	8.9662 mm
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words		3.3		3.3	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0				.00005 Amp	9.271 mm	75 ns
AT24C01A-10SA-2.7C	Atmel	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V			e0				.000004 Amp	4.9 mm
AT24C01A-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION = 100 YEARS		e0	30	240		.000004 Amp	4.9 mm
AT24C01BU3-UU-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words		5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128X8	128	-40 Cel				BOTTOM		R-PBGA-B8		5.5 V	.91 mm		1 MHz	1.5 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			2 mm
AT24C02AN-10SI-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e0				.000003 Amp	4.9 mm
AT24C02B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260		.000003 Amp	9.271 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.