EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT93C46DY6-YH-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	64 words	SEPARATE	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,20	8		100	.5 mm	85 Cel	NO	3-STATE	64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm		5 ms	3-WIRE	1024 bit	4.5 V	ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN		e4	40	260	.000015 Amp	3 mm		5
AT93C66A-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	IT CAN ALSO CONFIGURABLE AS 256 X 8		e3		260	.00001 Amp	9.271 mm
AT93C66B-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		1.8/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel	NO	3-STATE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V	ALSO OPERATES WITH 1.7V-5.5V AND 2.5V-5.5V SUPPLY		e4	40	260	.000001 Amp	4.4 mm		1.8
AT93C86A-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		2/5	16	SMALL OUTLINE	SOP8,.23	8	EEPROMs	100	1.27 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL	1	SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	1.8 V	OPERATES AT 250 KHz AT MIN 1.8V		e3	40	260	.000001 Amp	4.9 mm		5
BR24G128F-5E2	ROHM	EEPROM																																																I2C						NOT SPECIFIED	NOT SPECIFIED
BR24G32F-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words					8	SMALL OUTLINE					1.27 mm	85 Cel			4KX8	4K	-40 Cel		TIN			DUAL			R-PDSO-G8		5.5 V	1.71 mm		.4 MHz	4.4 mm		5 ms	I2C	32768 bit	1.6 V	SEATED HGT CALCULATED		e3				5 mm
BR24G64F-5E2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words		2.5			8	SMALL OUTLINE					1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		5 mm
BR24L01AF-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			128X8	128	-40 Cel		TIN COPPER	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.71 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e2	10	260	.000002 Amp	5 mm
BR24L08FVM-WTR	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	40	.65 mm	85 Cel			1KX8	1K	-40 Cel		TIN COPPER	1010DMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.095 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e2	10	260	.000002 Amp	2.9 mm
BR24T01NUX-WGTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words		2.5		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			128X8	128	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
BR25H640FJ-2ACE2	ROHM	EEPROM	AUTOMOTIVE	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		8192 words					8	SMALL OUTLINE, LOW PROFILE					1.27 mm	125 Cel			8KX8	8K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		4 ms	SPI	65536 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR93L66RF-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		2.5		2/5	16	SMALL OUTLINE, LOW PROFILE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.6 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	5 mm
CAT24C01YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			1KX1	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e4		260	.000001 Amp	4.4 mm
CAT24C01YIG	Catalyst Semiconductor	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	128 words				2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	85 Cel			128X8	128	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000002 Amp
CAT24C02WI-GA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4			.000001 Amp	4.9 mm
CAT24C02ZE-GT3A	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4			.000005 Amp	3 mm
CAT24C512LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	65536 words		3.3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel	NO		64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			e4			.000002 Amp	9.27 mm
CAT24WC64WI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words					8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm		10 ms	I2C	65536 bit	2.5 V						.000001 Amp	4.9 mm
CAT25010YI-GT3D	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4	30	260	.000002 Amp	4.4 mm
CAT25160VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260	.000002 Amp	4.9 mm
CAT28C16ALI-12	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	IN-LINE	DIP24,.6		EEPROMs	100	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO	Tin (Sn)			DUAL			R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	120 ns	5	YES
CAT28C16AW-20T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	SMALL OUTLINE	SOP24,.4		EEPROMs	100	1.27 mm	70 Cel			2KX8	2K	0 Cel	NO	TIN			DUAL			R-PDSO-G24	1	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		16384 bit	4.5 V			e3	30	260	.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AWI90	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	SMALL OUTLINE	SOP24,.4		EEPROMs	100	1.27 mm	85 Cel			2KX8	2K	-40 Cel	NO				DUAL			R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		16384 bit	4.5 V				NOT SPECIFIED	260	.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AWI-90	Catalyst Semiconductor	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5	NO	5	8	SMALL OUTLINE	SOP24,.4		EEPROMs		1.27 mm	85 Cel			2KX8	2K	-40 Cel	NO	MATTE TIN			DUAL			R-PDSO-G24	1	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		16384 bit	4.5 V			e3			.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C256T13I-15	Catalyst Semiconductor	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0			.00015 Amp	11.8 mm	150 ns	5	YES
CAT28C256T13I15	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0			.00015 Amp	11.8 mm	150 ns	5	YES
CAT28C64BH13I12	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			8KX8	8K	-40 Cel	NO	Matte Tin (Sn)			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3			.0001 Amp	11.8 mm	120 ns	5	YES
CAT28C64BH13I-12	Rochester Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V			e3				11.8 mm	120 ns	5
CAT34C02YI-GT5A	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words		5		1.8/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	NO		16X16	16	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	256 bit	1.7 V	100 YEAR DATA RETENTION	16	e4	30	260	.000001 Amp	4.4 mm
CAT93C46VI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	64 words				2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel			64X16	64	-40 Cel		TIN			DUAL		SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e3		260	.000001 Amp
CAT93C46VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	64 words		5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel			64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	1 ms	MICROWIRE	1024 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260	.000001 Amp	4.9 mm
CAV25080VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel			1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	8192 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
CAV25320YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel			4KX8	4K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED	.000004 Amp	4.4 mm
CAV25M01VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words		5			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.8 mm	125 Cel			128KX8	128K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	.39 mm		10 MHz	3.9 mm		5 ms	SPI	1048576 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		4.9 mm
DS2430AV	Maxim Integrated	EEPROM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		32 words		5		3/5	8	SMALL OUTLINE, LOW PROFILE	SOC6,.17		EEPROMs		1.27 mm	85 Cel			32X8	32	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6		6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE		e0				3.94 mm
DS2431X+U	Analog Devices	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		256 words		3.3		3/5	4	GRID ARRAY	BGA6,2X3,40/20		EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	TIN SILVER COPPER NICKEL			BOTTOM		HARDWARE	R-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e2	30	260		1.68 mm			NO
DS28E05P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		64 words		3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	64 bit	2.75 V			e3	30	260		4.29 mm
DS28E05R+U	Analog Devices	EEPROM	INDUSTRIAL	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	64 words		3.3		3/3.3	1	SMALL OUTLINE	TO-236		EEPROMs	10	.95 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G3	1	3.63 V	1.12 mm	1000 Write/Erase Cycles		1.3 mm	Not Qualified		1-WIRE	64 bit	2.97 V			e3	30	260		2.92 mm
FT24C04A-USR-T	Fremont Micro Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE					1.27 mm	85 Cel			512X8	512	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		5 ms	I2C	4096 bit	2.5 V	IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
FT24C04A-UTR-B	Fremont Micro Devices	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			512X8	512	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm		5 ms	I2C	4096 bit	2.5 V	IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
HT24LC64(8DIP)	Holtek Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		5 mA	8192 words				2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel			8KX8	8K	0 Cel			1010DDDR		DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit							.000004 Amp
IS24C08A-2GLI	Integrated Silicon Solution	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			1KX8	1K	-40 Cel		MATTE TIN	1010DMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e3	10	260	.000001 Amp	4.9 mm
M24512-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	524288 bit	1.8 V			e4		260	.00001 Amp	4.9 mm		5
M24C01-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	128 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e4			.000001 Amp	4.4 mm
M24C01-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	128 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm
M24C02-DRDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			50	.65 mm	125 Cel		TOTEM POLE	256X8	256	-40 Cel					DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		4 ms	I2C	2048 bit	1.7 V							4.4 mm
M24C02-DRMN8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	50	1.27 mm	105 Cel			256X8	256	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	900000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	2048 bit	1.8 V						.000001 Amp	4.9 mm
M24C04-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		512 words		2.5			8	SMALL OUTLINE					1.27 mm	125 Cel			512X8	512	-40 Cel					DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	4096 bit	1.7 V							4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.