EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M95128-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16384 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	145 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		10 MHz	3 mm		4 ms	SPI	131072 bit	2.5 V			e4		260			4.4 mm
M95320-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4		260		.000002 Amp	4.4 mm		1.8
M95320-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4				.000002 Amp	4.9 mm		1.8
M95640-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4				.000001 Amp	4.4 mm		1.8
M95M04-DWDW3TP/V	STMicroelectronics	EEPROM		8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	524288 words		3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		10	.65 mm	125 Cel			512KX8	512K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm		4 ms	SPI	4194304 bit	2.9 V				30	260		.00003 Amp	4.4 mm
PCF8582C-2P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE		e4				.0000035 Amp	9.5 mm
PCF8582C-2P/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4				.0000035 Amp	9.5 mm
PCF8582C-2T/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4	30	260		.0000035 Amp	4.9 mm
PCF8582C2D-T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V				40	260			4.9 mm
R1EX25512ATA00I#S0	Renesas Electronics	EEPROM																																															SPI						NOT SPECIFIED	NOT SPECIFIED
S-24C16DI-I8T1U5	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	85 Cel			2KX8	2K	-40 Cel		TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		1 MHz	1.97 mm		5 ms	I2C	16384 bit	2.5 V	IT ALSO OPERATES AT 0.4 MHZ AT 1.7 TO 5.5 V SUPPLY VOLTAGE		e3					2.23 mm
S-25C080A0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	85 Cel			1KX8	1K	-40 Cel		TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		5 MHz	1.97 mm		4 ms	SPI	8192 bit	2.5 V	IT ALSO HAVE FREQUENCY OF 2 MHZ OPERATES AT 1.6 TO 2.5 V SUPPLY VOLTAGE		e3					2.23 mm
W27C512-45Z	Winbond Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5			8	IN-LINE				2.54 mm	70 Cel			64KX8	64K	0 Cel					DUAL			R-PDIP-T28		5.25 V	5.33 mm			15.24 mm	Not Qualified			524288 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED			37.08 mm	45 ns	12
X24C16PM-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V								9.585 mm
X24C16PMB-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V								9.585 mm
X24C16PMB-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V								9.585 mm
X25020S	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel		Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020S-2.7	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020SIT2	Xicor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE			100	1.27 mm	85 Cel		3-STATE	256X8	256	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
X25020ST1	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE			100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
X28HC256JI-12T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	13.97 mm	120 ns	5	YES
X28HC256SI-12T1	Intersil	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	1	5.5 V	2.65 mm	1000000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	17.9 mm	120 ns	5	YES
XC1701LSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	36288X1	36288	0 Cel		Matte Tin (Sn)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250		.00005 Amp	9.3599 mm
XC18V01SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC18V01VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			1048576 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V01VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel			128KX8	128K	-40 Cel		Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			1048576 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE				.8 mm	85 Cel			512KX8	512K	-40 Cel					QUAD			S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified			4194304 bit	3 V								10 mm	20 ns
XCF08PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel			8MX1	8M	-40 Cel		TIN LEAD			BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	240	NOR TYPE	.001 Amp	9 mm
XCF32PVO48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8		1.5/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories	20	.5 mm	85 Cel			32MX1	32M	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	225	NOR TYPE		18.45 mm
11AA010-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3	40	260		.000005 Amp	3 mm
11AA010-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm
11AA010-I/WF16K	Microchip Technology	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words		5	NO		8	UNCASED CHIP	DIE OR CHIP		200		85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel				NO	UPPER	1	SOFTWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	.1 MHz			10 ms	1-WIRE	1024 bit	2.5 V							.000005 Amp
11AA010T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm
24AA00T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words		5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	16X8	16	-40 Cel		MATTE TIN	1010XXXR		DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.5 mm	Not Qualified	4 ms	I2C	128 bit	4.5 V			e3		260		.000001 Amp	2.9 mm		5
24AA01HT-I/LT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5		2/5	8	SMALL OUTLINE	TSSOP5/6,.08	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		Matte Tin (Sn) - annealed	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e3	40	260		.000001 Amp	2 mm		2.5
24AA02T/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel		OPEN-DRAIN	256X8	256	0 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3	30	260			4.9 mm		5
24AA04T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260		.000001 Amp	4.9 mm		2.5
24AA08T-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010XMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e4	40	260		.000001 Amp	3 mm		2.5
24AA08T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		Matte Tin (Sn)	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260		.000001 Amp	4.9 mm		2.5
24AA128T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3	40	260		.000005 Amp	5.26 mm		2.5
24AA128T-I/SNRVF	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel	NO	OPEN-DRAIN	16KX8	16K	-40 Cel			1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	131072 bit	2.5 V	ALSO OPERATES AT 0.1MHZ AT 1.7-2.5 SUPPLY VOLTGE						.000001 Amp	4.9 mm		2.5
24AA16-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
24AA16T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	4.4 mm		2.5
24AA512-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3				.000001 Amp	5.245 mm
24AA64T-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20		200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N10	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	65536 bit	2.5 V			e4	40	260		.000005 Amp	3 mm		4.5
24AA64T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		4.5
24C02CT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V			e3	40	260		.000005 Amp	3 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.