EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
93AA46AE48T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel		3-STATE	128X8	128	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm		6 ms	3-WIRE	1024 bit	2.5 V			e3			.000001 Amp	2.9 mm		3
93AA66CT-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel			256X16	256	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	ALSO CONFIGURABLE AS 512 X 8		e3	40	260	.000001 Amp	4.9 mm
93C46BX-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	4.5 V	1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS		e3	30	260	.000001 Amp	4.9 mm
93C56C-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES		16	SMALL OUTLINE	SOP8,.25	8		200	1.27 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	4.5 V			e3	30	260	.000001 Amp	4.9 mm
93C66A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	YES	5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	2 ms	MICROWIRE	4096 bit	1.8 V			e3			.000001 Amp	9.27 mm
93LC46A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3			.000001 Amp	9.27 mm
93LC56BT-I/SNC22	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5			16	SMALL OUTLINE		8		200	1.27 mm	85 Cel		3-STATE	128X16	128	-40 Cel		Matte Tin (Sn)			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3	40	260		4.9 mm
93LC66B/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words	3		3/5	16	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel			256X16	256	0 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V			e3	30	260	.000001 Amp	4.9 mm		3
93LC66BT-I/OT15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5			16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel			256X16	256	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm		6 ms	MICROWIRE	4096 bit	2.5 V	1.8V TO 2.5V @ 1MHz					.000001 Amp	2.9 mm		5
93LC66BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3		3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V			e3		260	.000001 Amp	2.9 mm
AT18F010-30XU	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		EEPROMs		.65 mm	85 Cel			1MX1	1M	-40 Cel					DUAL			R-PDSO-G20		3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	4.4 mm	Not Qualified			1048576 bit	3 V						.001 Amp	6.5 mm
AT24C01BN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			128X8	128	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.9 mm
AT24C01C-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	1024 bit	1.7 V			e3			.000006 Amp	9.271 mm		2.5
AT24C01C-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel	NO	OPEN-DRAIN	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V	ALSO HAS 1 MHZ CLOCK FREQ AT 2.5V AND 5V SUPPLY	8	e4	40	260	.000006 Amp	4.4 mm		2.5	YES
AT24C02C-XHMAU-T-346	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			256X8	256	-40 Cel		Matte Tin (Sn)			DUAL			R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	2048 bit	1.7 V			e3				4.4 mm
AT24C02N-10SU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	4.9 mm
AT24C04C-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	4096 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ		e4	40	260	.000006 Amp	4.4 mm		3
AT24C08AN-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			1KX8	1K	-40 Cel		Tin/Lead (Sn/Pb)	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e0	30	240	.000004 Amp	4.9 mm
AT24C08B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			1KX8	1K	-40 Cel		MATTE TIN	1010DMMR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e3			.000003 Amp	9.27 mm
AT24C08D-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			1KX8	1K	-40 Cel					BOTTOM			S-PBGA-B4		3.6 V	.355 mm		1 MHz			5 ms	I2C	8192 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED
AT24C08D-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	8192 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e4	40	260	.0000008 Amp	4.4 mm		3
AT24C08N-10SI-2.7T/R	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	2.7 V	2-WIRE SERIAL INTERFACE						4.9 mm
AT24C1024B-TH25-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			40	.65 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			1010DDMR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1048576 bit	2.5 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	256				.000006 Amp	4.4 mm
AT24C1024BW-SH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words				8	SMALL OUTLINE	SOP8,.3			40	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			1010DDMR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5 V	2.16 mm	1000000 Write/Erase Cycles	1 MHz	5.24 mm		5 ms	I2C	1048576 bit	2.5 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	256				.000006 Amp	5.29 mm
AT24C128C-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4	40	260	.000006 Amp	4.4 mm		3
AT24C512N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel		TIN LEAD	10100DDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	524288 bit	2.7 V			e0			.000002 Amp	4.9 mm
AT24CS01-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2048 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	16384 bit	1.7 V			e4			.000006 Amp	4.4 mm		5
AT24CS04-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	512 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.11,20			100	.5 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	4096 bit	2.5 V	1.7V TO 2.5V @ 0.4MHz		e4	40	260	.000006 Amp	3 mm		5
AT24CS16-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	6	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel	NO		2048X8	2048	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G6		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3			.000001 Amp	2.9 mm		5
AT25080B-MAHL-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1024 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel	NO	3-STATE	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm		5 ms	SPI	8192 bit	4.5 V	ALSO OPERATES AT MIN 1.8 V AT 5 MHZ		e4	40	260	.000006 Amp	3 mm		1.8
AT25128B-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	16384 words	5		2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz		e4	40	260	.000005 Amp	3 mm		5
AT25256AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES 1.8 V SUPPLY AT 5MHZ	64				.000005 Amp	4.925 mm		5
AT25256B-CUL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	10 mA	32768 words	2.5		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,30		EEPROMs	100	.75 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	2.35 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3			.000003 Amp	3.73 mm
AT28BV256-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	11.8 mm	200 ns	3	YES
AT28BV256-20TU	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDSO-G28	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	2.7 V		64	e3			.00005 Amp	11.8 mm	200 ns	3	YES
AT28BV256-25SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel			32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00002 Amp	17.9 mm	250 ns	3	YES
AT28BV256-25SI	Atmel	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	17.9 mm	250 ns	3	YES
AT28C16E-15PI	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5			8	IN-LINE	DIP24,.6			10	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO				DUAL			R-PDIP-T24		5.5 V	5.59 mm	100000 Write/Erase Cycles		15.24 mm		.2 ms		16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
AT28C256-20PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	200 ns	5	YES
AT28C256F-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C64B-15JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	Tin/Lead (Sn/Pb)			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225	.0001 Amp	13.97 mm	150 ns	5	YES
AT28HC256-12PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT28HC256E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm				262144 bit	4.5 V			e3	40	245		13.97 mm	120 ns	5
AT28HC256F-90DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL	1	HARDWARE/SOFTWARE	R-GDIP-T28	1	5.5 V	5.72 mm			15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.215 mm	90 ns	5	YES
AT28HC256F-90SU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G28	3	5.5 V	2.65 mm			7.5 mm		3 ms		262144 bit	4.5 V			e3	30	260		17.9 mm	90 ns	5
AT28HC64B-70SU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES		8	SMALL OUTLINE	SOP28,.4			10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN			DUAL	1		R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm		10 ms		65536 bit	4.5 V		64	e3	30	260	.0001 Amp	17.9 mm	70 ns	5	YES
AT28HC64BF-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES		8	SMALL OUTLINE	SOP8,.16			10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN			DUAL	1		R-PDSO-G32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT34C02C-TH-T	Microchip Technology	EEPROM		8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			256X8	256	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	2-WIRE	2048 bit	1.7 V						.000018 Amp	4.4 mm		3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.