EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24LC02BT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	70 Cel		OPEN-DRAIN	256X8	256	0 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V			e3	30	260	.0001 Amp	4.9 mm		5
24LC08B-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words	5			8	IN-LINE	DIP8,.3			200	2.54 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3			.000005 Amp	9.271 mm		5
24LC128T-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel			1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	131072 bit	2.5 V						.000005 Amp	4.9 mm		5
24LC16B-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	40	260	.000001 Amp	3 mm		5
24LC16BT-E/MC	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	125 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	40	260	.000005 Amp	3 mm		5
24LC256-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	40	260	.000005 Amp	6 mm		4.5
24LC32AT-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260	.000005 Amp	4.4 mm
24LC515-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	40	260	.000005 Amp	5.245 mm		4.5
24VL014/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128X8	128	-20 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz		e3	30	260	.000001 Amp	4.9 mm		2.5
24VL014T/MNY	Microchip Technology	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	128X8	128	-20 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz		e4	40	260	.000001 Amp	3 mm		2.5
25AA320A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 1.8V MIN @ 3 MHZ		e3	30	260	.000005 Amp	4.9 mm		5
25CSM04T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel			512KX8	512K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	8 MHz	5 mm		5 ms	SPI	4194304 bit	2.5 V						.000002 Amp	6 mm		5
25LC160C-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V			e3	30	260	.000001 Amp	4.9 mm		5
93LC56CT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	3	YES		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8		200	.5 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000001 Amp	3 mm
93LC66AT-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel			512X8	512	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm		6 ms	MICROWIRE	4096 bit	2.5 V	1.8V TO 2.5V @ 1MHz					.000001 Amp	4.9 mm		5
AT24C08D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010000R		DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	8192 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e3			.0000008 Amp	2.9 mm		3
AT24C32AN-10SU-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			4KX8	4K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	2.7 V			e3	40	260	.000002 Amp	4.9 mm
AT24CS02-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V			e4	40	260	.000006 Amp	4.925 mm		2.5
AT24CS02-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	1.7 V			e4			.000006 Amp	4.4 mm		2.5
AT24CS04-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.7		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	1	EEPROMs	100	.95 mm	85 Cel	NO	OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010000R		DUAL	1	HARDWARE	R-PDSO-G5		5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7MIN SUPPLY		e3			.000001 Amp	2.9 mm		2.7
AT24MAC602-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V			e4			.000006 Amp	4.925 mm		2.5
AT25080A-10TU-2.7	Microchip Technology	EEPROM																																MATTE TIN							1													e3	30	260
AT25320B-XHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz	32	e4			.00001 Amp	4.4 mm		5
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm				262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT28C64B-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	Tin/Lead (Sn/Pb)			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0	30	225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28HC256-12PU	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e3			.0003 Amp	37.0205 mm	120 ns	5	YES
AT93C46-10PU-2.7	Microchip Technology	EEPROM
BR24G16FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3			8	SMALL OUTLINE, LOW PROFILE	SOP8,.25			40	1.27 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel		TIN	1010MMMR		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	16384 bit	1.6 V	SEATED HGT CALCULATED		e3			.000002 Amp	4.9 mm		3
BR34E02FVT-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		1.8/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel		PURE TIN	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.25 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				10	260	.000002 Amp	4.4 mm
CAT24S64C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.85 mm		5 ms	I2C	65536 bit	1.7 V	LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260		.85 mm
CAT25128VI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm
CAT25160HU2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08,20		EEPROMs	100	.5 mm	85 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4		260	.000002 Amp	2 mm
CAT25160VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4		260	.000002 Amp	3 mm
CAT28C16ALI-20	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	IN-LINE	DIP24,.6		EEPROMs	100	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO	TIN			DUAL			R-PDIP-T24		5.5 V	6.35 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	200 ns	5	YES
CAT28C256LI-15	Catalyst Semiconductor	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C256LI15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT93C46YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	64 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel			64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V	100 YEAR DATA RETENTION		e4		260	.000001 Amp	4.4 mm
CAT93C66YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel			256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260	.00001 Amp	4.4 mm
CAT93C86VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel			16KX1	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V			e4	30	260	.00001 Amp	4.9 mm
CAV24C256YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
DS1973-F3	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON						85 Cel			512X8	512	-40 Cel		TIN LEAD			END			O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V			e0
DS1973-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON						85 Cel			512X8	512	-40 Cel		Matte Tin (Sn) - annealed			END			O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V			e3
DS28E25+T	Analog Devices	EEPROM																																Matte Tin (Sn) - annealed															1-WIRE					e3		250
DS28E25G+T	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		4096 words	3.3			1	CHIP CARRIER, VERY THIN PROFILE						85 Cel			4KX1	4K	-40 Cel		NICKEL GOLD PALLADIUM			BOTTOM			S-XBCC-B2		3.63 V	1 mm			6 mm			1-WIRE	4096 bit	2.97 V							6 mm
DS28EL25Q+T	Maxim Integrated	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel		MATTE TIN			DUAL			S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	4096 bit	1.71 V			e3	30	260		3 mm
M24128-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5			8	SMALL OUTLINE					1.27 mm	125 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	131072 bit	1.8 V			e4		260		4.9 mm
M24128S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			16KX8	16K	-40 Cel					BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24C04-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e4	30	260	.000001 Amp	4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.