EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M24C08-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel	TIN LEAD	1010DMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	4.5 V		e0				.000001 Amp	9.27 mm
M24C32-DRDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		4 ms	I2C	32768 bit	1.8 V		e4		260			4.4 mm
M24C64-RMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	Tin/Lead (Sn85Pb15)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V		e0				.0000002 Amp	4.9 mm
M24C64-RMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V		e0				.0000002 Amp	4.9 mm
M24LR04E-RDW6T/2	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5		32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128X32	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	4096 bit	1.8 V		e4					4.4 mm
M93C46-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5	3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V		e3				.00001 Amp	9.27 mm
M93C86-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	1024 words	5	3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V		e3				.00001 Amp	9.27 mm
M95020-WDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e4	40	260		.000001 Amp	4.4 mm
M95080-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e4				.000001 Amp	4.9 mm
M95160-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		2KX8	2K	-40 Cel			DUAL			R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			3 mm
M95512-DFCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		64KX8	64K	-40 Cel	TIN SILVER COPPER		BOTTOM			R-PBGA-B8		5.5 V	.58 mm		5 MHz	1.271 mm			SPI	524288 bit	1.7 V		e1		260			1.937 mm
M95512-DRMN8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	50	1.27 mm	105 Cel		64KX8	64K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	900000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	4 ms	SPI	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	4.9 mm
M95M01-RMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V		e3	30	260		.000003 Amp
M95M04-DWMN3TP/V	STMicroelectronics	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.6		8	SMALL OUTLINE	SOP8,.25			10	1.27 mm	125 Cel		512KX8	512K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		4 ms	SPI	4194304 bit	2.9 V						.00003 Amp	4.9 mm
MIC-S04	STMicroelectronics
MR25H128APDF	Everspin Technologies	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		16KX8	16K	-40 Cel			DUAL			R-PDSO-N8	3	3.6 V	.9 mm		40 MHz	5 mm			SPI	131072 bit	2.7 V							6 mm
NMC93C46EN	National Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	64 words	5	5	16	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel	3-STATE	64X16	64	-40 Cel	TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	40000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V		e0				.0001 Amp	9.817 mm
PCA24S08D/DG,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words		3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel		10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000015 Amp
PCF8582C-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	100000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE	e4				.0000035 Amp	4.9 mm
PCF8582C2D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel		1010DDDR	DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			40	260			4.9 mm
S-93C46BD0H-J8T2G	Ablic	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		64 words	5		16	SMALL OUTLINE					1.27 mm	105 Cel		64X16	64	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm	Not Qualified	8 ms	MICROWIRE	1024 bit	1.8 V			10	260			5.02 mm
SPD5118-Y1B000NCG8	Renesas Electronics	EEPROM																													TIN						1												e3		260
ST25DV16KC-JF8D3	STMicroelectronics	EEPROM																																																						12
TH58NVG5S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4294967296 words	3.3		8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel			DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V							18.4 mm		3
X24C16PM	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5		8	IN-LINE					2.54 mm	125 Cel		2KX8	2K	-55 Cel			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V							9.585 mm
X24C16PM-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3		8	IN-LINE					2.54 mm	125 Cel		2KX8	2K	-55 Cel			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V							9.585 mm
X24C16PM-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5		8	IN-LINE					2.54 mm	125 Cel		2KX8	2K	-55 Cel			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V							9.585 mm
X24C16PMB	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5		8	IN-LINE					2.54 mm	125 Cel		2KX8	2K	-55 Cel			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V							9.585 mm
X24C16PMB-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3		8	IN-LINE					2.54 mm	125 Cel		2KX8	2K	-55 Cel			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V							9.585 mm
X25020P	Xicor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5	5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel	Tin/Lead (Sn/Pb)		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.32 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS	e0				.00015 Amp	10.03 mm
XC18V01PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words	3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V01SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words	3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
24AA01/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	128X8	128	0 Cel	MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V		e3	30	260		.0001 Amp	4.9 mm		5
24AA014-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V		e3	30	260		.000001 Amp	4.9 mm		2.5
24AA014T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel		128X8	128	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-PDSO-G6		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V						.000001 Amp	2.9 mm		2.5
24AA02/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel	MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V		e3	30	260		.0001 Amp	4.9 mm		5
24AA024T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260		.000001 Amp	3 mm		2.5
24AA024T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	30	260		.000001 Amp	4.9 mm		2.5
24AA32AT-I/MSG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel		4KX8	4K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260		.000001 Amp	3 mm
24AA64-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		8	IN-LINE	DIP8,.3			200	2.54 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	65536 bit	2.5 V		e3				.000005 Amp	9.271 mm		4.5
24AA64-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		8	SMALL OUTLINE	SOP8,.10			200	1.27 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-J8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm		5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000005 Amp	5.26 mm		4.5
24AA64-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm		4.5
24AA64FT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e4	40	260		.000001 Amp	3 mm		5
24AA65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel	OPEN-DRAIN	8KX8	8K	0 Cel	MATTE TIN	1010DDDR	DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e3				.000005 Amp	9.46 mm		5
24C02C-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V		e3	40	260		.00005 Amp	4.9 mm
24CW1280T-I/CS1668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	16384 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,20			200	.5 mm	85 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel	TIN SILVER COPPER	1010DDDR	BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	131072 bit	1.6 V	TERM PITCH-MAX	e1				.000001 Amp			1.8
24FC16T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	16384 bit	1.7 V						.000001 Amp	2.95 mm		2.5
24LC01BT-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel		128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.