EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24LC128-I/STG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS		e3		260	.000001 Amp	4.4 mm
AT24C16D-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words			1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e4	40	260	.0000008 Amp	4.925 mm
11AA02E48T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5		2/5	8	SMALL OUTLINE	TO-236		EEPROMs	200	.95 mm	85 Cel	NO		256X8	256	-40 Cel		MATTE TIN	10100000R		DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	.1 MHz	1.3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e3		260	.000001 Amp	2.9 mm		2.5
24AA08T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3		260	.000001 Amp	2.9 mm		2.5
AT24C512C-SSHM-T-989	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	3			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel					DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	524288 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ					.000006 Amp	4.925 mm		3
24FC256-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260	.000005 Amp	4.4 mm		2.5
93LC56B-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel			128X16	128	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000001 Amp	4.9 mm
93LC56BT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	8	EEPROMs	200	.95 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000005 Amp	2.9 mm
AT28C64B-15SU	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN			DUAL	1		R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3	30	260	.0001 Amp	17.9 mm	150 ns	5	YES
M24C32-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7			8	SMALL OUTLINE					1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e4		260		4.9 mm
AT24C01C-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	NO	OPEN-DRAIN	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	1024 bit	1.7 V	ALSO HAS 1 MHZ CLOCK FREQ AT 2.5V AND 5V SUPPLY	8	e4	40	260	.000006 Amp	4.925 mm		2.5	YES
M95256-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e4	30	260	.000003 Amp	4.9 mm
M95M01-DFDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	1.8		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	16 MHz	3 mm	Not Qualified	5 ms	SPI	1048576 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm
93LC56B-I/SNRVA	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel			128X16	128	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm		6 ms	MICROWIRE	2048 bit	2.5 V							4.9 mm
M95M02-DRCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	262144 words	2.5		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8(UNSPEC)		EEPROMs	200		85 Cel			256KX8	256K	-40 Cel		TIN SILVER COPPER			BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.58 mm	4000000 Write/Erase Cycles	5 MHz	2.011 mm	Not Qualified	10 ms	SPI	2097152 bit	1.8 V			e1	30	260	.000003 Amp	3.556 mm
AT25320B-SSHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz	32	e4		260	.00001 Amp	4.925 mm		5
M24M01-DFMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5			8	SMALL OUTLINE					1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		5 ms	I2C	1048576 bit	1.7 V			e4		260		4.9 mm
AT93C66B-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5		1.8/5	16	SMALL OUTLINE	SOP8,.23	8	EEPROMs	100	1.27 mm	85 Cel			256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	3-WIRE	4096 bit	4.5 V	2.5V TO 5.5V @ 1MHz AND 1.7V TO 5.5V @ 0.25MHz		e4	40	260	.000015 Amp	4.925 mm
AT93C66B-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5		1.8/5	16	SMALL OUTLINE	SOP8,.23	8	EEPROMs	100	1.27 mm	85 Cel	NO	3-STATE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V	ALSO OPERATES WITH 1.7V-5.5V AND 2.5V-5.5V SUPPLY		e4	40	260	.000001 Amp	4.926 mm		1.8
M24C02-FMN6TP	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words			1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			256X8	256	-20 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	4.9 mm
M95640-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4			.000001 Amp	4.9 mm		2.7
AT25640B-SSHL-B-899	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	65536 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ					.00001 Amp	4.925 mm		5
24AA024-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3			.000005 Amp	9.271 mm		2.5
24LC128T-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			16KX8	16K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS		e3	40	260	.000001 Amp	4.9 mm
24LC1025T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm		3
24LC16B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	40	260	.000001 Amp	3 mm		5
24LC16BT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	40	260	.000001 Amp	3 mm		5
CAT24C64WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	1.8		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e4	30	260	.000003 Amp	4.9 mm
24AA024-I/MSG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260	.000001 Amp	3 mm
24LC1025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3			.000005 Amp	9.271 mm		3
M24M01-DWMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE					1.27 mm	125 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	1048576 bit	2.5 V			e4	30	260		4.9 mm
24AA32AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel			4KX8	4K	-40 Cel		Matte Tin (Sn) - annealed	1010000R		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260	.000001 Amp	2.9 mm
AT28C256E-15JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN			QUAD		HARDWARE/SOFTWARE	R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	40	245	.0002 Amp	13.97 mm	150 ns	5	YES
25LC040AT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	125 Cel			512X8	512	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e3		260	.000005 Amp	2.9 mm		5
24AA64T-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3	40	260	.000001 Amp	4.9 mm
24LC01BTE/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel	NO		128X8	128	-40 Cel		MATTE TIN	1010XXXR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3		260	.000005 Amp	2.95 mm
AT24C128C-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4	40	260	.000006 Amp	3 mm		3
DS1990A-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words	3.3		3/5	1	DISK BUTTON	BUTTON,.68IN		Other Memory ICs			85 Cel			64X1	64	-40 Cel		TIN LEAD			END			O-MEDB-N2	1	6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e0					15000 ns
DS1990A-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words				1	DISK BUTTON						85 Cel			64X1	64	-40 Cel		MATTE TIN			END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e3
DS1990A-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words	3.3		3/5	1	DISK BUTTON	BUTTON,.68IN		Other Memory ICs			85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e3					15000 ns
24AA024-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000001 Amp	4.4 mm		2.5
CAT24AA02TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words			2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010000R		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
M95160-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V			e4	30	260	.000001 Amp	4.9 mm
AT24C64B-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.7 V			e3	30	260	.000002 Amp	4.4 mm		3
M24C04-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			512X8	512	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e4	40	260	.000001 Amp	4.9 mm
24AA024-I/STG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3		260	.000001 Amp	4.4 mm
24AA08T-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel			1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e3		260	.000001 Amp	2.95 mm
AT24C256N-10SU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.25			40	1.27 mm	85 Cel			32KX8	32K	-40 Cel			10100DDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		10 ms	I2C	262144 bit	4.5 V	ALSO OPERATES AT 0.4MHZ AT 2.7VMIN SUPPLY	64				.000006 Amp	4.9 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.