EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24AA64T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260	.000001 Amp	3 mm		4.5
AT21CS11-STU10-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236			100	.95 mm	85 Cel			128X8	128	-40 Cel			1010DDDR		DUAL	1		R-PDSO-G3		4.5 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	1-WIRE	1024 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	.0000025 Amp	2.9 mm
24LC512-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm
24LC512T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	40	260	.000001 Amp	6 mm
24LC256T-I/SM15KVAO	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.6			8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm		5 ms	I2C	262144 bit	2.5 V						.0000015 Amp	5.26 mm		4.5
24LC64F-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260	.000001 Amp	4.4 mm		5
BR93H56RF-2CE2	ROHM	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	4		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	4 ms	MICROWIRE	2048 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	5 mm
M95512-WMN6P/K	STMicroelectronics	EEPROM
M95040-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e4		260	.000001 Amp	4.9 mm
M95128-WMN6TP/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4			.000005 Amp	4.9 mm
24LC32AT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3		260	.000001 Amp	3 mm
CAT24C04YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3		1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm
CAV24C64WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5			1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel	NO		64KX1	64K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	65536 bit	2.5 V			e4	30	260	.000005 Amp	4.9 mm	.0035 ns	5
24LC32A-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	30	260	.000005 Amp	4.9 mm
93AA56BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	2/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	1.8 V			e3	40	260	.000001 Amp	2.9 mm
M95128-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4	30	260	.000003 Amp	4.9 mm
CAT24C04WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	4.9 mm
CAT24C04WIG	Catalyst Semiconductor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	512 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel			1010DDMR		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000002 Amp
CAV24C02WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.6			1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel		3-STATE	2KX1	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm		3.6
24AA256-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	40	260	.000005 Amp	6 mm		2.5
AT25512N-SH-B-899	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	524288 bit	4.5 V	ALSO OPERATES AT 2.7V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ					.000005 Amp	4.9 mm		5
CAT25M01VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5			8	SMALL OUTLINE		1			1.27 mm	85 Cel			128KX8	128K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	1048576 bit	1.8 V			e4	40	260		4.9 mm
X28HC256JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
24AA256-I/STG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO		32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260	.000001 Amp	4.4 mm
DS1961S-F5#	Maxim Integrated	EEPROM	COMMERCIAL EXTENDED	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	3.3			1	DISK BUTTON						85 Cel			1KX1	1K	-20 Cel		MATTE TIN			END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS1961S-F5	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words			3/5	1	DISK BUTTON	BUTTON,.68IN		SRAMs			85 Cel			1KX1	1K	-20 Cel		TIN LEAD			END			O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e0	20	240
DS1961S-F5+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON						85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed			END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3
M24128-BFMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	1.8		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e4	30	260	.000001 Amp	3 mm
M95512-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V			e4	40	260	.000005 Amp	4.9 mm
X28HC256JIZ-90T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
24AA08-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260	.000001 Amp	4.9 mm		2.5
24AA1026-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e3	30	260	.000005 Amp	4.9 mm		2.5
AT24C02D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	3		1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ		e3			.0000008 Amp	2.9 mm		3
AT24C512C-XHD-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V	1.7V TO 2.5V @ 0.4MHz		e4		260	.000006 Amp	4.4 mm		5
AT28HC256-12LM/883	Microchip Technology	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs	10	1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD			QUAD			R-CQCC-N32	1	5.5 V	2.54 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	13.97 mm	120 ns	5	YES
AT28LV010-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15000 mA	131072 words	3.3	YES		8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	85 Cel			128KX8	128K	-40 Cel	NO	MATTE TIN			QUAD	1		R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	3.135 V		128	e3			.00005 Amp	13.97 mm	200 ns	3.3	YES
M24256-DFDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	1.8		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm
24AA256UIDT-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	262144 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	4.4 mm		4.5
24FC512-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3	30	260	.000001 Amp	4.9 mm		2.5
M24C02-FMC6TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words			1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			256X8	256	-20 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V						.000001 Amp	3 mm
24AA256T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260	.000005 Amp	4.4 mm		2.5
24LC128-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260	.000005 Amp	6 mm		4.5
24LC64T-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260	.000001 Amp	5.245 mm
24AA256-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260	.000005 Amp	5.26 mm		2.5
AT28C256-25DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					2.54 mm	125 Cel			32KX8	32K	-55 Cel					DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED		37.215 mm	250 ns	5
24AA16HT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn) - annealed	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000001 Amp	2.9 mm		2.5
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3			8	CHIP CARRIER	LCC32,.45X.55			10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT93C86A-10SU-2.7-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	5			16	SMALL OUTLINE	SOP8,.23	8		100	1.27 mm	85 Cel	NO	3-STATE	1024X16	1024	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm		10 ms	MICROWIRE	16384 bit	4.5 V	ALSO AVAILABLE 2.7V-5.5V OPERATES WITH 1MHZ AND 1.8V-5.5V OPERATES WITH 250KHZ			NOT SPECIFIED	NOT SPECIFIED	.000015 Amp	4.9 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.