EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24AA1026T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e3	30	260	.000005 Amp	4.9 mm		2.5
24AA512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3			.000001 Amp	9.271 mm
24AA64/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3			.000001 Amp	9.271 mm		2.5
24CS512T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words				8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	3.4 MHz	1.63 mm		5 ms	I2C	524288 bit	2.5 V			e3			.000003 Amp	2.95 mm
24CS512T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words				8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	3.4 MHz	5.25 mm		5 ms	I2C	524288 bit	2.5 V			e3			.000003 Amp	5.26 mm
24CW1280T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	131072 bit	1.6 V			e3			.000001 Amp	4.4 mm		1.8
24FC512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3			.000001 Amp	9.271 mm		2.5
24LC024-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	30	260	.000001 Amp	4.9 mm		5
24LC04BT-E/SNG	Microchip Technology	EEPROM	AUTOMOTIVE	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	512X8	512	-40 Cel		Matte Tin (Sn)	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	40	260	.000005 Amp	4.9 mm		5
24LC1026-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3			.000005 Amp	9.271 mm		5
24LC16B-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			2KX8	2K	-40 Cel			1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	16384 bit	2.5 V						.000005 Amp	4.9 mm		5
24LC64FT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e4	40	260	.000001 Amp	3 mm		5
25LC010AT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		3-STATE	128X8	128	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	ALSO OPERATES AT 2.5V TO 4.5V @5MHZ		e3	40	260	.000005 Amp	3 mm		5
25LC080A-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			1KX8	1K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm		5
25LC256X-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			32KX8	32K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3	40	260	.000001 Amp	4.4 mm		4.5
25LC640AT-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	125 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3	40	260	.000005 Amp	4.4 mm		5
93C46BT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel			64X16	64	0 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	2 ms	MICROWIRE	1024 bit	4.5 V			e3	30	260	.000001 Amp	4.9 mm		5
93C66BT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	YES	5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	2 ms	MICROWIRE	4096 bit	1.8 V			e3	30	260	.000001 Amp	4.9 mm
93LC46C-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel			64X16	64	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3	40	260	.000001 Amp	4.9 mm
93LC56BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000005 Amp	3 mm
AT21CS11-UU0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			128X8	128	-40 Cel					BOTTOM			X-PBGA-B4		4.5 V	.355 mm					5 ms	1-WIRE	1024 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED
AT24C02B-TP25-B	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	125 Cel			256X8	256	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	2048 bit	2.5 V		8				.000018 Amp	4.4 mm		5
AT24C08C-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	40	260	.000001 Amp	4.4 mm		5
AT24HC02C-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ		e4	40	260	.000006 Amp	4.925 mm		3
AT25010B-SSHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	128 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz		e4		260	.0000035 Amp	4.925 mm		5
AT25160B-XHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	NO	3-STATE	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V			e4	40	260	.000006 Amp	4.4 mm		1.8
AT28C256-15DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					2.54 mm	125 Cel			32KX8	32K	-55 Cel		TIN LEAD			DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V		64	e0				37.215 mm	150 ns	5
AT28C256E-25DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel			32KX8	32K	-55 Cel	NO				DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	37.215 mm	250 ns	5	YES
AT28C64B-15SUSL383	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL			R-PDSO-G28		5.5 V	2.65 mm			7.5 mm		10 ms		65536 bit	4.5 V							17.9 mm	150 ns	5
AT28HC256-70PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				37.0205 mm	70 ns	5	YES
AT28HC256E-90JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel		Matte Tin (Sn)			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms		262144 bit	4.5 V	AUTOMATIC WRITE		e3	40	245		13.97 mm	90 ns	5
BR25G256FJ-3GE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	32768 words	5			8	SMALL OUTLINE, LOW PROFILE	SOP8,.25			100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	262144 bit	4.5 V	SEATED HT-CALCULATED;also operates with 10mhz @2.5V,5MHZ @1.7V,3MHZ@1.6V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm		5
CAT24C128WI-G	Catalyst Semiconductor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	16384 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			16KX8	16K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	131072 bit							.000001 Amp
CAT25020VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e4	30	260	.000002 Amp	4.9 mm
CAT25640VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	100 YEAR DATA RETENTION		e4	30	260	.000002 Amp	4.9 mm
CAT93C66VI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel			256X16	256	-40 Cel		TIN			DUAL		SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3		260	.00001 Amp	4.9 mm
CAV25256YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		10 MHz	3 mm		5 ms	SPI	262144 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		4.4 mm
DS2433-Z01	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	CYLINDRICAL						85 Cel			512X8	512	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V					Not Qualified		1-WIRE	4096 bit	2.8 V			e0
DS2433G+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	5		3/5	1	CHIP CARRIER	SURF MNT 2,.25SQ		EEPROMs			85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD			QUAD			S-XQCC-N2		6 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	4096 bit	2.8 V			e4				6 mm
M24128-DRDW8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	50	.65 mm	105 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	900000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	4 ms	I2C	131072 bit	1.8 V			e4		260	.000001 Amp	4.4 mm
M24C02-WDW6TP/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			256X8	256	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	SPI	2048 bit	2.5 V							4.4 mm
M24C16-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e4		260	.000001 Amp	4.9 mm		2.5
M95010-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4	30	260	.000002 Amp	4.9 mm
M95256-DFMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5			8	SMALL OUTLINE					1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		20 MHz	3.9 mm		5 ms	SPI	262144 bit	1.7 V			e4	30	260		4.9 mm
M95512-RDW6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V			e4			.000005 Amp	4.4 mm
M95M04-DWDW4TP/V	STMicroelectronics	EEPROM		8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			10	.65 mm	145 Cel			512KX8	512K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm		4 ms	SPI	4194304 bit	2.9 V						.00003 Amp	4.4 mm
R1EX25004ASA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY		e3			.000002 Amp	4.89 mm
11AA010-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	5	NO	2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3			.000005 Amp	9.271 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.