24 EPROM 292

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

NTE2732A

Nte Electronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

TIN LEAD

DUAL

R-XDIP-T24

5.25 V

Not Qualified

32768 bit

4.75 V

e0

200 ns

21

2708

Intel

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

-5 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

8

IN-LINE

70 Cel

1KX8

1K

0 Cel

DUAL

R-PDIP-T24

5.25 V

Not Qualified

8192 bit

4.75 V

IT ALSO REQUIRES 12V VDD SUPPLY

450 ns

M2732A-2F1

STMicroelectronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.25 V

5.715 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

21V PROGRAMMING VOLTAGE

e0

31.75 mm

200 ns

21

NMC27C16BQ200

National Semiconductor

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-GDIP-T24

5.5 V

5.969 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

TTL COMPATIBLE INPUT & OUTPUT LEVELS

e0

.0001 Amp

200 ns

CY7C245A-18WMB

Cypress Semiconductor

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

1

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS

e0

.12 Amp

31.877 mm

12 ns

12.5

NTE2716

Nte Electronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

160 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-XDIP-T24

5.25 V

Not Qualified

16384 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

350 ns

25

CY7C261-20WC

Cypress Semiconductor

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

POWER SWITCHED PROM

e0

.04 Amp

31.877 mm

20 ns

CY7C263-20WC

Cypress Semiconductor

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

POWER SWITCHED PROM

e0

.04 Amp

31.877 mm

20 ns

NTE2532

Nte Electronics

UVPROM

COMMERCIAL

24

RECTANGULAR

UNSPECIFIED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

8

IN-LINE

70 Cel

4KX8

4K

0 Cel

DUAL

R-XDIP-T24

5.25 V

Not Qualified

32768 bit

4.75 V

300 ns

NTE2708

Nte Electronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

1KX8

1K

0 Cel

TIN LEAD

DUAL

R-XDIP-T24

5.25 V

Not Qualified

8192 bit

4.75 V

e0

450 ns

CY7C243-25WC

Cypress Semiconductor

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

25 ns

AM2732A-3DC

Advanced Micro Devices

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

300 ns

21

D2716-1

Intel

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

350 ns

25

CY7C245-45WC

Cypress Semiconductor

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

90 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

e0

.09 Amp

70 ns

13.5

TMM2732D

Toshiba

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

350 ns

25

CY7C264-45WC

Cypress Semiconductor

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.715 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

POWER SWITCHED PROM

e0

.03 Amp

31.877 mm

45 ns

D2732A-2

Rochester Electronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

200 ns

21

MCM2532C

Motorola

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

450 ns

NMC27C32BQE200

National Semiconductor

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-GDIP-T24

5.5 V

5.969 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

TTL/CMOS COMPATIBLE INPUT & OUTPUT LEVELS

e0

.0001 Amp

200 ns

SMJ2532-30JM

Texas Instruments

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

NOT SPECIFIED

NOT SPECIFIED

300 ns

SMJ2532-35JM

Texas Instruments

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

350 ns

SMJ2532-45JDM

Texas Instruments

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

450 ns

SMJ2532-45JM

Texas Instruments

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

450 ns

NMC27C16BQ250

Texas Instruments

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

70 Cel

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

5.25 V

16384 bit

4.75 V

250 ns

TMS27C32-25JL4

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

250 ns

TMS27C291-5JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

7.62 mm

Not Qualified

16384 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.055 Amp

31.75 mm

50 ns

13.5

TMS27C32-10JE4

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

100 ns

TMS27C49-55JTL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

31.75 mm

55 ns

TMS27C291-50JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.055 Amp

31.75 mm

50 ns

13.5

TMS27C32JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

250 ns

TMS27C291-45JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.06 Amp

31.75 mm

45 ns

13.5

TMS27C32-120JE4

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

120 ns

TMS27C32-20JE4

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

200 ns

TMS27C291-3JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

7.62 mm

Not Qualified

16384 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.075 Amp

31.75 mm

35 ns

13.5

TMS27C32-2JL4

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

200 ns

TMS27C291JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

7.62 mm

Not Qualified

16384 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.06 Amp

31.75 mm

45 ns

13.5

TMS27C32-100JE4

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

100 ns

TMS2732A-25JP4

Texas Instruments

UVPROM

OTHER

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-10 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

31.75 mm

250 ns

21

TMS27C32-15JE

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

150 ns

TMS27C32-150JL4

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

150 ns

TMS27C32-25JE

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

250 ns

TMS2532-45JL

Texas Instruments

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

8

IN-LINE

70 Cel

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.25 V

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

450 ns

TMS27C32-2JE

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

200 ns

TMS27C32-25JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

250 ns

TMS25L32-45JDL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

450 ns

TMS2732A-15JL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

150 ns

21

TMS27C49-55JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

31.75 mm

55 ns

TMS27C49-5JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

65536 bit

4.75 V

31.75 mm

55 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.