Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nte Electronics |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T24 |
5.25 V |
Not Qualified |
32768 bit |
4.75 V |
e0 |
200 ns |
21 |
|||||||||||||
Intel |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
NMOS |
-5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
IN-LINE |
70 Cel |
1KX8 |
1K |
0 Cel |
DUAL |
R-PDIP-T24 |
5.25 V |
Not Qualified |
8192 bit |
4.75 V |
IT ALSO REQUIRES 12V VDD SUPPLY |
450 ns |
|||||||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.25 V |
5.715 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
21V PROGRAMMING VOLTAGE |
e0 |
31.75 mm |
200 ns |
21 |
|||||||||
National Semiconductor |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T24 |
5.5 V |
5.969 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
TTL COMPATIBLE INPUT & OUTPUT LEVELS |
e0 |
.0001 Amp |
200 ns |
||||||||||
Cypress Semiconductor |
UVPROM |
MILITARY |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
1 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS |
e0 |
.12 Amp |
31.877 mm |
12 ns |
12.5 |
||||||
|
Nte Electronics |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-XDIP-T24 |
5.25 V |
Not Qualified |
16384 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
350 ns |
25 |
||||||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
POWER SWITCHED PROM |
e0 |
.04 Amp |
31.877 mm |
20 ns |
|||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
POWER SWITCHED PROM |
e0 |
.04 Amp |
31.877 mm |
20 ns |
|||||||||
Nte Electronics |
UVPROM |
COMMERCIAL |
24 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
IN-LINE |
70 Cel |
4KX8 |
4K |
0 Cel |
DUAL |
R-XDIP-T24 |
5.25 V |
Not Qualified |
32768 bit |
4.75 V |
300 ns |
||||||||||||||||||||||||
Nte Electronics |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
IN-LINE |
DIP24,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T24 |
5.25 V |
Not Qualified |
8192 bit |
4.75 V |
e0 |
450 ns |
|||||||||||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
25 ns |
||||||||||||||
Advanced Micro Devices |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
e0 |
300 ns |
21 |
||||||||||||||||||||
Intel |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
100 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
e0 |
350 ns |
25 |
||||||||||||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
90 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
.09 Amp |
70 ns |
13.5 |
||||||||||||
Toshiba |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
e0 |
350 ns |
25 |
||||||||||||||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.715 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
POWER SWITCHED PROM |
e0 |
.03 Amp |
31.877 mm |
45 ns |
|||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
100 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
e0 |
200 ns |
21 |
||||||||||||||||||
Motorola |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
e0 |
450 ns |
|||||||||||||||||||||||
National Semiconductor |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T24 |
5.5 V |
5.969 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
TTL/CMOS COMPATIBLE INPUT & OUTPUT LEVELS |
e0 |
.0001 Amp |
200 ns |
||||||||||
Texas Instruments |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
4096 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||||
Texas Instruments |
UVPROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
4096 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
350 ns |
|||||||||||||||||||||||
Texas Instruments |
UVPROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
4096 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
450 ns |
|||||||||||||||||||||||
Texas Instruments |
UVPROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
4096 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
450 ns |
|||||||||||||||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
5.25 V |
16384 bit |
4.75 V |
250 ns |
||||||||||||||||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
250 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.055 Amp |
31.75 mm |
50 ns |
13.5 |
|||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
100 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
31.75 mm |
55 ns |
||||||||||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.055 Amp |
31.75 mm |
50 ns |
13.5 |
|||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
250 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
60 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.06 Amp |
31.75 mm |
45 ns |
13.5 |
|||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
120 ns |
||||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
200 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
75 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.075 Amp |
31.75 mm |
35 ns |
13.5 |
|||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
200 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
60 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.06 Amp |
31.75 mm |
45 ns |
13.5 |
|||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
100 ns |
||||||||||
Texas Instruments |
UVPROM |
OTHER |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-10 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
31.75 mm |
250 ns |
21 |
|||||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
150 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
150 ns |
||||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
250 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
IN-LINE |
70 Cel |
4KX8 |
4K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
||||||||||||||||||||||
Texas Instruments |
UVPROM |
INDUSTRIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
-40 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
200 ns |
||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
31.75 mm |
250 ns |
||||||||||
Texas Instruments |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
450 ns |
|||||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
150 ns |
21 |
||||||||||||||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.5 V |
4.907 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
31.75 mm |
55 ns |
||||||||||||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
DUAL |
R-CDIP-T24 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.75 V |
31.75 mm |
55 ns |
EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.
EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.
EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.