24 EPROM 292

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
WS57C43C-35D	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.135 mm	35 ns
WS57C43C-25D	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.135 mm	25 ns
5962-8751501JX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V				32.135 mm	45 ns
ETC2732Q-45	STMicroelectronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-XDIP-T24					Not Qualified	32768 bit				.0001 Amp		450 ns
5962-9065804KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			35 ns
5962-9065804LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V				32.005 mm	35 ns
5962-9065804KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			35 ns
5962-9065804KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			35 ns
WS57C45-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	79 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel		DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V			.03 Amp	32.005 mm	25 ns	13.5
5962-8765004LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V				32.005 mm	45 ns
5962-8765004KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDFP-F24		5.5 V			Not Qualified	16384 bit	4.5 V					45 ns
5962-9065803JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			45 ns
WS57C43C-35TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.005 mm	35 ns
WS57291C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words				8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	16384 bit					32.005 mm	45 ns
5962-9065804JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V		e0	.035 Amp		35 ns
5962-9065802KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	GOLD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V		e4			55 ns
WS57C49C-70TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	83 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	65536 bit			e0	.035 Amp	32.005 mm	70 ns
WS57C49C-70T	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		8KX8	8K	0 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				32.005 mm	70 ns
5962-9065802KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			55 ns
WS57C49C-45DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24			5.72 mm	15.24 mm	Not Qualified	65536 bit			e0	.035 Amp	32.135 mm	45 ns
WS57C43C-70TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V				32.005 mm	70 ns
ETC2716Q-5	STMicroelectronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel		DUAL	R-XDIP-T24					Not Qualified	16384 bit				.0001 Amp		550 ns
WS57C291C-35T	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	.025 Amp	32.005 mm	35 ns	12.75
5962-8765002JA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0	.12 Amp	32.135 mm	55 ns	13.5
5962-9065801KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			70 ns
WS57C49C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	65536 bit			e0	.035 Amp	32.005 mm	45 ns
WS57LV291C-90T	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	COMMON	3.3	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		3.6 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	3 V		e0	.025 Amp	32.005 mm	90 ns	12.75
M2732A-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		e0		31.75 mm	300 ns	21
M2732A-3F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	300 ns	21
M2732A-45F1	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.71 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0			450 ns	21
M2732A-25F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	250 ns	21
M2732AF6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	250 ns	21
M2732A-30F1	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.71 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0			300 ns	21
M2732A-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0		31.75 mm	200 ns	21
M2732A-25F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0		31.75 mm	250 ns	21
M2732AF1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	250 ns	21
M2732A-4F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	450 ns	21
M2732A-20F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	200 ns	21
M2732A-2F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		e0		31.75 mm	200 ns	21
M2732A-4F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0		31.75 mm	450 ns	21
82009033X	NXP Semiconductors	UVPROM	OTHER	24			UNSPECIFIED		1	NMOS			PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				100 Cel		4KX8	4K	-55 Cel		DUAL			5.5 V				32768 bit	4.5 V					450 ns
8200903JX	NXP Semiconductors	UVPROM	OTHER	24			UNSPECIFIED		1	NMOS			PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				100 Cel		4KX8	4K	-55 Cel		DUAL			5.5 V				32768 bit	4.5 V					450 ns
TMM2732D-1	Toshiba		INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0			350 ns	25
HN482732AG-25	Renesas Electronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				70 Cel		4KX8	4K	0 Cel		DUAL	R-PDIP-T24		5.25 V				32768 bit	4.75 V					250 ns
UPD2732AD-2	Renesas Electronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0			200 ns	21
UPD2732D	Renesas Electronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0			450 ns	25
UPD27HC65DX-35	Renesas Electronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	65536 bit			e0	.025 Amp		35 ns
UPD27HC65DX-45	Renesas Electronics		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	65536 bit			e0	.025 Amp		45 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.