24 EPROM 292

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

TMS27C32-20JL4

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

200 ns

TMS27C32JE

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

250 ns

TMS27C292-5JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

16384 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.055 Amp

31.75 mm

50 ns

13.5

TMS27C32-12JE

Texas Instruments

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

120 ns

TMS27C291-35JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.035 Amp

31.75 mm

35 ns

13.5

TMS27C292-3JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

16384 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.075 Amp

31.75 mm

35 ns

13.5

TMS2532A-35JL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

NOT SPECIFIED

NOT SPECIFIED

350 ns

TMS2532-35JDL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

350 ns

TMS27C49-4JTL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

7.62 mm

Not Qualified

65536 bit

4.75 V

31.75 mm

45 ns

TMS2532-30JDL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

32768 bit

300 ns

TMS27C292-35JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.075 Amp

31.75 mm

35 ns

13.5

TMS27C32-150JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

150 ns

TMS27C49-45JL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

31.75 mm

45 ns

TMS27C32-15JL4

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

DUAL

R-CDIP-T24

5.5 V

4.907 mm

15.24 mm

Not Qualified

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00025 Amp

31.75 mm

150 ns

TMS27C49-5JTL

Texas Instruments

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-CDIP-T24

5.25 V

4.907 mm

7.62 mm

Not Qualified

65536 bit

4.75 V

31.75 mm

55 ns

WS57LV291C-70T

STMicroelectronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

2048 words

COMMON

3.3

5

8

IN-LINE

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

3.6 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

3 V

e0

.025 Amp

32.005 mm

70 ns

12.75

5962-9065801LA

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

.035 Amp

70 ns

WS57C49C-35TI

STMicroelectronics

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

85 Cel

3-STATE

8KX8

8K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

.035 Amp

32.005 mm

35 ns

M2716-1F1

STMicroelectronics

UVPROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.715 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

25V PROGRAMMING VOLTAGE

e0

31.75 mm

350 ns

25

5962-9065804JX

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

8

IN-LINE

125 Cel

4KX8

4K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

35 ns

5962-9065802JX

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

8

IN-LINE

125 Cel

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

55 ns

WS57C291C-45TI

STMicroelectronics

UVPROM

INDUSTRIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

e0

.025 Amp

32.005 mm

45 ns

12.75

WS57191C-45DMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

8

IN-LINE, WINDOW

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.72 mm

15.24 mm

Not Qualified

16384 bit

32.135 mm

45 ns

5962-9065802KB

STMicroelectronics

UVPROM

MILITARY

24

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

8

FLATPACK

125 Cel

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDFP-F24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

55 ns

5962-8751502LA

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

32.005 mm

55 ns

5962-8765001JA

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

e0

.12 Amp

50 ns

13.5

5962-9065801KB

STMicroelectronics

UVPROM

MILITARY

24

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

8

FLATPACK

125 Cel

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDFP-F24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

70 ns

WS57C49C-45T

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

107 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

.03 Amp

32.005 mm

45 ns

WS57C191C-45DMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

e0

.025 Amp

32.135 mm

45 ns

12.75

WS57C49C-35D

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

e0

.035 Amp

32.135 mm

35 ns

WS57C43C-45TMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

32768 bit

4.5 V

e0

.03 Amp

32.005 mm

45 ns

WS57C291C-45TMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

e0

.025 Amp

32.005 mm

45 ns

12.75

WS57C191C-45D

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

e0

.025 Amp

32.135 mm

45 ns

12.75

5962-8765004KB

STMicroelectronics

UVPROM

MILITARY

24

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

MIL-STD-883

FLAT

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

125 Cel

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDFP-F24

5.5 V

Not Qualified

16384 bit

4.5 V

e0

45 ns

WS57C49C-55FMB

STMicroelectronics

UVPROM

MILITARY

24

WDFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

MIL-STD-883 Class B

FLAT

PARALLEL

ASYNCHRONOUS

8192 words

8

FLATPACK, WINDOW

1.27 mm

125 Cel

8KX8

8K

-55 Cel

DUAL

R-GDFP-F24

2.29 mm

9.652 mm

Not Qualified

65536 bit

15.495 mm

55 ns

M27HC641-45XF1

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.25 V

5.71 mm

15.24 mm

Not Qualified

65536 bit

4.75 V

e0

.02 Amp

45 ns

WS57C191C-35D

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

e0

.025 Amp

32.135 mm

35 ns

12.75

5962-9065803JA

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

.035 Amp

45 ns

5962-9065802KA

STMicroelectronics

UVPROM

MILITARY

24

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

8

FLATPACK

125 Cel

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDFP-F24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

55 ns

WS57C49C-25T

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

.035 Amp

32.005 mm

25 ns

5962-8751503LA

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

32.005 mm

70 ns

5962-8751504JX

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

125 Cel

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

e0

32.15 mm

90 ns

5962-8751504LX

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

125 Cel

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

32 mm

90 ns

WS57C291C-45T

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

2048 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

e0

.025 Amp

32.005 mm

45 ns

12.75

5962-9065801LX

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

8

IN-LINE

125 Cel

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

70 ns

M2716-1F6

STMicroelectronics

UVPROM

INDUSTRIAL

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.715 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

25V PROGRAMMING VOLTAGE

e0

31.75 mm

350 ns

25

5962-8751507LA

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

POWER SWITCHED PROM

e0

.035 Amp

31.877 mm

35 ns

WS57C49C-35DMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.72 mm

15.24 mm

Not Qualified

65536 bit

e0

.035 Amp

32.135 mm

35 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.