WDIP EPROM 2,351

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
5962-8751501JX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V				32.135 mm	45 ns
M27V160-110XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP42,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	MATTE TIN	DUAL	R-GDIP-T42		3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00002 Amp		110 ns
M87C257-90XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		90 ns
5962-8606308XA	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0	.045 Amp	37.25 mm	70 ns	12.5
M27V322-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42		3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
WS57C51C-45D	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	139 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0		37.215 mm	45 ns
WS57C51C-55TI	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V		e0	.035 Amp	37.085 mm	55 ns
M27W201-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32		3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	41.885 mm	80 ns
5962-9065804LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V				32.005 mm	35 ns
M27V101-200F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32		3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e0	.00002 Amp	41.885 mm	200 ns
M27V322-120XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42		3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
M27W101-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32		3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3		41.885 mm	100 ns
WS57C51C-45TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	149 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V		e0	.035 Amp	37.085 mm	45 ns
M87C257-90F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		90 ns
M27256-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			300 ns	12.5
M87C257-20XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	150 ns
M87C257-45XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		45 ns
M27V800-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42		3.465 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	120 ns
M87C257-10XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	100 ns
M27W101-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32		3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3		41.885 mm	100 ns
TTV27C256N-70C-21	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	70 ns	12.75
M27W101-100F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN	DUAL	R-GDIP-T32		3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3		41.885 mm	100 ns
M27V101-120F1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	R-GDIP-T32		3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V				41.885 mm	120 ns
M27V101-120F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-GDIP-T32		3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V				41.885 mm	120 ns
M2764A-25F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			250 ns	12.5
WS27C010L-20DMB	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	.0001 Amp	42.295 mm	200 ns
M87C257-90XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	90 ns
WS57C45-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	79 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel		DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V			.03 Amp	32.005 mm	25 ns	13.5
M27V402-120F4	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40		3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		e0	.00002 Amp	52.195 mm	120 ns
M27V160-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42		3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
M27W256-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28		3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V				36.92 mm	150 ns
M87C257-70F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		70 ns
5962-8765004LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V				32.005 mm	45 ns
5962-8606306XX	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0		37.1475 mm	120 ns
M27V800-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42		3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	100 ns
WS27C010L-15DMB	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	.0001 Amp	42.295 mm	150 ns
M27512-3F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			300 ns
WS57C43C-35TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.005 mm	35 ns
TTV27C256N-20C-7	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	200 ns	12.75
M87C257-10XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	100 ns
WS57C256F-55DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0	.0005 Amp	37.215 mm	55 ns	12.5
M27V801-180F1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	IN-LINE, WINDOW				2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-GDIP-T32		3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3 V				41.885 mm	180 ns
M27V201-120F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32		3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	3 V		e3	.00002 Amp	41.885 mm	120 ns
M27W400-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words				8	IN-LINE, WINDOW		16		2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T40		3.96 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	2.43 V				52.195 mm	100 ns
M87C257-80XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		80 ns
M27V401-180F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32		3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	41.885 mm	180 ns
WS57291C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words				8	IN-LINE, WINDOW				2.54 mm	125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24			5.08 mm	7.62 mm	Not Qualified	16384 bit					32.005 mm	45 ns
M27256-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			200 ns	12.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.