WDIP EPROM 2,351

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C1001-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	80 ns
M27C256B-60XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	60 ns	12.75
M27C512-15XF1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	150 ns
M27C4002-90F1X	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	52.195 mm	90 ns
M27C256B-12F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	120 ns	12.75
M27C2001-55XF6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	e3			.0001 Amp	41.885 mm	55 ns
M27C1001-25XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	41.885 mm	120 ns
M27C256B-10XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	100 ns	12.75
M27C1001-80F1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	80 ns
M27C516-15F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			.0002 Amp		150 ns
M27C4001-35XF6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	41.885 mm	35 ns
M27C202-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		16	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX16	128K	-40 Cel		DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V					52.195 mm	100 ns
M27C202-120F3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		16	IN-LINE, WINDOW				2.54 mm	125 Cel		128KX16	128K	-40 Cel		DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V					52.195 mm	100 ns
M27C512-60XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	60 ns
M27C256B-70F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	70 ns	12.75
M27C2001-55XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	e3			.0001 Amp	41.885 mm	55 ns
M27C1001-80XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	41.885 mm	80 ns
M27C512-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			.0001 Amp	36.92 mm	120 ns
M27C1001-80F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	80 ns
M27C1001-70F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	70 ns
M2732A-45F1	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.71 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	e0					450 ns	21
M27C1001-25XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	41.885 mm	120 ns
M27C1024-15XF7	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C2001-55XF6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	e3				41.885 mm	55 ns
M27C516-12F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			.0002 Amp		120 ns
M27C512-10XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	100 ns
M27C512-80XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0			.0001 Amp	36.92 mm	80 ns
M27C800-70XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.25 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	e3			.00005 Amp	54.635 mm	70 ns
M27C801-60F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel		1MX8	1M	-40 Cel	TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3				41.885 mm	60 ns
M27C512-80XF6E	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	80 ns
M27C4001-90F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	41.885 mm	90 ns
M27C4002-10XF1X	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C801-70F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	70 ns
M27C256B-70F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	70 ns	12.75
M27C1024-90XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	80 ns
M27C1000-15XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	41.885 mm	150 ns
M27C1024-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	80 ns
M27C512-12XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	120 ns
M27C512-80XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0			.0001 Amp	36.92 mm	80 ns
M27C160-200F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP42,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0			.0001 Amp		200 ns
M27C1024-15F7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	100 ns
M27C256B-45F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	45 ns	12.75
M27C1024-90XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	80 ns
M27C516-12XF1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0			.0002 Amp		120 ns
M27C256B-90XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	90 ns	12.75
M27C1024-90XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	80 ns
M27C1024-12XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C1024-90F7	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	80 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.