INDUSTRIAL EPROM 1,425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C4002-60XJ6X	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	16.51 mm	60 ns
M27C202-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3			.0001 Amp	52.195 mm	80 ns
M27C2001-55L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V	e4			.0001 Amp	13.97 mm	55 ns
M27C256B-25F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C4001-55XL6XTR	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					4194304 bit		e0			.0001 Amp		55 ns
M27C1001-80L6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0			.0001 Amp	13.97 mm	80 ns
M27C1001-35XF6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	41.885 mm	35 ns
M27C2001-10F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3				41.885 mm	100 ns
M27C256B-20F7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			.0001 Amp		200 ns	12.75
M27C64A-25F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3			.0001 Amp	36.92 mm	250 ns	12.5
M27C1024-80F6X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	80 ns
M27C4002-60J6X	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	16.51 mm	60 ns
M27C1001-60XL6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e4			.0001 Amp	13.97 mm	60 ns
M27C2001-25L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V	e4			.0001 Amp	13.97 mm	150 ns
M27C800-50XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.25 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	e3			.00005 Amp	54.635 mm	50 ns
M27C1024-60F6	STMicroelectronics		INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0			.0001 Amp		60 ns
M27C4001-90L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V	e0			.0001 Amp	13.97 mm	80 ns
M27C512-12XF6E	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	120 ns
M27C1001-70F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	70 ns
M27C256B-70XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW				2.54 mm	105 Cel		32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V						70 ns
M27C4001L	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	85 Cel		512KX8	512K	-40 Cel		QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	4.75 V					13.97 mm	95 ns
M27C801-55F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	55 ns
M27C400-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0			.0001 Amp	52.195 mm	100 ns
M27C4001-55F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	41.885 mm	55 ns
M27C4002-12J6TR	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	16.51 mm	120 ns
M27C1001-20XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	120 ns
M27C801-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	80 ns
M27C2001-55XL6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V	e4			.0001 Amp	13.97 mm	55 ns
M27C2001-10XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V	e0			.0001 Amp	13.97 mm	100 ns
M27C4001-70XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.75 V	e0			.0001 Amp	13.97 mm	70 ns
M27C4001-15XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.75 V	e0			.0001 Amp	13.97 mm	100 ns
M27C4002-70F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V					52.195 mm	70 ns
M27C4001-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3		245	.0001 Amp	41.885 mm	100 ns
M27C4002-20F6X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	52.195 mm	200 ns
M27C4002-20XJ6X	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	16.51 mm	200 ns
M27C2001-12F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3			.0001 Amp	41.885 mm	120 ns
M27C512-70F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	70 ns
M27C1001-45L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e4			.0001 Amp	13.97 mm	45 ns
M27C801-80F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	80 ns
M27C2001-20XF6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	e3				41.885 mm	200 ns
M27C4001-55L6XTR	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					4194304 bit		e0			.0001 Amp		55 ns
M27C4001-10XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.75 V	e0			.0001 Amp	13.97 mm	100 ns
M27C4001-80L6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V	e0			.0001 Amp	13.97 mm	80 ns
M27C801-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	120 ns
M27C256B-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	90 ns	12.75
M27C4002-20XF6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V					52.195 mm	200 ns
M27C4002-12XJ6XTR	STMicroelectronics		INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC	YES		CMOS	J BEND			70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-XQCC-J44					4194304 bit		e3			.0001 Amp		120 ns
M27C2001-10XL6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V	e4			.0001 Amp	13.97 mm	100 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.