EPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
WS57C256F-55D	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	37.215 mm	55 ns	12.75
WS57C256F-55L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6		EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0002 Amp	13.945 mm	55 ns	12.75
WS57C256F-55T	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	37.085 mm	55 ns	12.75
WS57C256F-70DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	117 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	37.215 mm	70 ns	12.5
8510201ZA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE							16KX8	16K			DUAL							131072 bit								450 ns
AM27C020-70DC	Spansion	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel		DUAL	R-CDIP-T32			5.58 mm	15.24 mm		2097152 bit							42.1 mm	70 ns
AM27C256-120DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-CDIP-T28		5.5 V	5.588 mm	15.24 mm		262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		37.1475 mm	120 ns
CY7C243-25WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.3		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V		e0					25 ns
D27128A20	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					200 ns	12.5
LD27128A2	Intel	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						131072 bit			e0					200 ns	12.5
M27C1001-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
M27C512-70F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	70 ns
M5M27C512AK-15	Mitsubishi Electric	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.1 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.7 mm	150 ns
MD27C64-20	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6				70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28		5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		200 ns	12.5
MD27C64-35	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6				70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-XDIP-T28		5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		350 ns	12.5
MD27C6420	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		200 ns	12.5
MD27C6435	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		350 ns	12.5
TD27128A-20	Intel	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.15 mm	200 ns	12.5
AM2732A-3DC	Advanced Micro Devices		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0					300 ns	21
AM27C400-120DC	Advanced Micro Devices	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP40,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T40		5.5 V	5.588 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.2605 mm	120 ns
AM27C512-150DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE					70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.5 V				524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			150 ns
EPC1441LC20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs	1.27 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	8.9662 mm		3.3
TS27C64A-25CQ	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		250 ns	12.5
CY7C251-45WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3		EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0			.035 Amp	37.0205 mm	45 ns
EPC1441PC8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	IN-LINE	DIP8,.3		OTP ROMs	2.54 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	9.398 mm		3.3
M27C1024-10F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40		5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	52.195 mm	100 ns
M27C512-20XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			.0001 Amp	36.92 mm	200 ns
D2716-1	Intel	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	16384 bit			e0					350 ns	25
M27C512-90F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	90 ns
MD27512-20	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			150 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					200 ns
EPC1LC20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs	1.27 mm	70 Cel	3-STATE	1046496X1	1046496	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	30	220	.0001 Amp	8.9662 mm		3.3
M27C64A-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns	12.5
TMM27128AD-20	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					200 ns	12.5
8510202YA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE							16KX8	16K			DUAL							131072 bit								450 ns
CY27C256-55WC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE					70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V		e0					55 ns
EPC1PI8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	IN-LINE	DIP8,.3		OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	9.398 mm		3.3
AT27C010-15KC	Atmel	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6		EPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32	1	5.5 V	4.24 mm	11.55 mm	Not Qualified	1048576 bit	4.5 V		e0			.00001 Amp	14.1 mm	150 ns
CY7C245-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0			.09 Amp		70 ns	13.5
CY7C251-55WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3		EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0			.035 Amp	37.0205 mm	55 ns
CY7C265-15WC	Cypress Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE	e0			.12 Amp	37.0205 mm	12 ns
D2764A-4	Intel	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			75 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					450 ns	12.5
D27C040-150V10	Intel	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
D27C400-150V10	Intel	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40(UNSPEC)		EPROMs		70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
MBM27256-25	Fujitsu Semiconductor America	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	NMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-CQCC-N32		5.25 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.75 V						13.97 mm	250 ns
NM27C128Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0			.0001 Amp		150 ns	12.75
NMC27C128BQ200	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.715 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0			.0001 Amp		200 ns	12.75
TMM2732D	Toshiba		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0					350 ns	25
AT27C010-10DC	Atmel	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	1	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				42.2 mm	100 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.