EPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
AT27C128-12DC	Atmel	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T28		5.5 V			Not Qualified	131072 bit	4.5 V		e0			.0001 Amp		120 ns	12.5
CY27C256-150WI	Cypress Semiconductor	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V							150 ns
CY7C264-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0			.03 Amp	31.877 mm	45 ns
CY7C287-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	524288 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE	e0					15 ns
D2732A-2	Rochester Electronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0					200 ns	21
D2764A	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			75 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					250 ns	12.5
D27C256	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			.0001 Amp		250 ns	12.75
EPC1441LI20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	8.9662 mm		3.3
EPC1PC8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1046496X1	1046496	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	9.398 mm		3.3
MBM27C512-25Z	Fujitsu		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0			.0001 Amp		250 ns
MCM2532C	Motorola		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	COMMON			8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	32768 bit			e0					450 ns
NM27C010Q120	National Semiconductor	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T32		5.5 V	5.969 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp		120 ns
NM27C256QE120	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp		120 ns	12.75
NM27C512Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.715 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp		150 ns
NMC27C32BQE200	National Semiconductor	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24		5.5 V	5.969 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	TTL/CMOS COMPATIBLE INPUT & OUTPUT LEVELS	e0			.0001 Amp		200 ns
QD2764A	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0				37.15 mm	250 ns	12.5
TMM27512AD-17	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0					170 ns
27C256-10I/P	Microchip Technology	EPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.83 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	DATA RETENTION >200 YEARS	e0			.0001 Amp	36.32 mm	100 ns	5
TMS27C256JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		250 ns	13
5962-8764801XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX8	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0				37.1475 mm	150 ns
SMJ27C256-25J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						36.83 mm	250 ns
5962-8766105XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE				125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T28		5.5 V			Not Qualified	131072 bit	4.5 V		e0					200 ns
TMS87C257-150JL	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.00025 Amp		150 ns
TMS87C257-2JL	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.00025 Amp		200 ns
SMJ27C210-12JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			120 ns
5962-01-357-9827	Texas Instruments		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		250 ns	13
SMJ27C010A-20J	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	200 ns
TMX27C512-20JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								200 ns
5962-8764802XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX8	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0				37.1475 mm	200 ns
TMS87C257-1JL	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.00025 Amp		170 ns
TMX27C512-2JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								200 ns
SMJ27C128-25JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	250 ns	12.5
5962-8606305XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0003 Amp	37.1475 mm	150 ns	12.5
5962-8961406QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
SMJ27C256JM	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.0003 Amp		250 ns	12.5
SMJ27C256-25JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	250 ns	12.5
SMJ27C210-30JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						52.07 mm	300 ns
TTV27C256N-12C-33	Texas Instruments	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.00025 Amp		120 ns	13
SMJ27C256-150JM	Texas Instruments		MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit						.0003 Amp		150 ns	12.5
5962-8961406QXX	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					120 ns
5962-8961403QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
SMJ27C128-120JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-CDIP-T28		5.25 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	120 ns	12.5
TMX27C512-25JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								250 ns
5962-8764803XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel		DUAL	R-GDIP-T28		5.5 V			Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.000325 Amp		250 ns
5962-8606303XA	Texas Instruments	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V		e0					300 ns
TMX27C512-3JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								300 ns
TMX27C512JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								250 ns
SMJ27C010-30JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	300 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.