CONFIGURATION MEMORY Flash Memory 19

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
EPCS4SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	3.3	8	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		4194304 bit	2.7 V	e4	20	260		.00005 Amp
XCF04SVOG20C	Xilinx	CONFIGURATION MEMORY		20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)		DUAL	HARDWARE	R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles	33 MHz	4.4 mm	Not Qualified		4194304 bit	3 V	e3	30	260	NOR TYPE	.01 Amp	6.5024 mm	3.3
EPCS16SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		16777216 bit	2.7 V	e4	20	260		.00005 Amp
EPCS64SI16N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3.3	3.3	8	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	8MX8	8M	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G16	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		67108864 bit	2.7 V	e4				.0001 Amp
EPCS1SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3.3	3.3	1	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		1048576 bit	2.7 V	e4	30	260		.00005 Amp
EPCS4SI8	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	3.3	8	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		4194304 bit	2.7 V	e0				.00005 Amp
EPCS128SI16N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3.3	3.3	8	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	16MX8	16M	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G16	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		134217728 bit	2.7 V	e4	20	260		.0001 Amp
EPCS16SI16N	Intel	CONFIGURATION MEMORY	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3.3		8	SMALL OUTLINE					70 Cel	3-STATE	2MX8	2M	0 Cel			DUAL		R-PDSO-G16		3.6 V		100000 Write/Erase Cycles	25 MHz				16777216 bit	2.7 V					.00005 Amp
EPCS1SI8	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3.3	3.3	1	SMALL OUTLINE		Flash Memories			85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified		1048576 bit	2.7 V	e0				.00005 Amp
AT17F040-30CU	Microchip Technology	CONFIGURATION MEMORY		8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3.3		1	SMALL OUTLINE	SOLCC8,.25			1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL GOLD		DUAL	HARDWARE	S-PDSO-N8	3	3.63 V	1.14 mm	100000 Write/Erase Cycles	33 MHz	5.99 mm	Not Qualified	2-WIRE	4194304 bit	2.97 V	e4	40	260		.001 Amp	5.99 mm	3.3
EPC16UI88AA	Intel	CONFIGURATION MEMORY	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	90 mA	16777216 words	3.3	3.3	1	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories		.8 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			BOTTOM		R-PBGA-B88		3.6 V	1.4 mm	100000 Write/Erase Cycles	66.7 MHz	8 mm	Not Qualified		16777216 bit	3 V					.00015 Amp	11 mm
AT17F16A-30CU	Microchip Technology	CONFIGURATION MEMORY		8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3.3		1	SMALL OUTLINE	SOLCC8,.24			1.27 mm	85 Cel		16MX1	16M	-40 Cel	NICKEL GOLD		DUAL		S-XDSO-N8	3	3.63 V	1.14 mm	10000 Write/Erase Cycles	10 MHz	5.99 mm	Not Qualified		16777216 bit	2.97 V	e4	40	260	NOR TYPE	.003 Amp	5.99 mm	3.3
AT17F16A-30JU	Microchip Technology	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3.3		1	CHIP CARRIER	LDCC20,.4SQ			1.27 mm	85 Cel		16MX1	16M	-40 Cel	MATTE TIN	YES	QUAD		R-PQCC-J20		3.63 V	4.572 mm	10000 Write/Erase Cycles	10 MHz	8.966 mm	Not Qualified		16777216 bit	2.97 V	e3			NOR TYPE	.003 Amp	8.966 mm	3.3
EPCQL256F24IN	Infineon Technologies	CONFIGURATION MEMORY	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	20 mA	33554432 words	1.8		8	GRID ARRAY	BGA24,5X5,39			1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			BOTTOM		R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	100 MHz	6 mm		SPI	268435456 bit	1.7 V				NOR TYPE	.00001 Amp	8 mm	1.8
2988780	Phoenix Contact	CONFIGURATION MEMORY	INDUSTRIAL			RECTANGULAR		NO	1	CMOS					268435456 words	3.3		8						85 Cel		256MX8	256M	-40 Cel							3.465 V	42.8 mm			3.3 mm			2147483648 bit	3.135 V						36.4 mm	3.3
2701185	Phoenix Contact	CONFIGURATION MEMORY			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD				2147483648 words	3.3		8	UNCASED CHIP					85 Cel		2GX8	2G	-40 Cel			UPPER		R-XUUC-N		3.465 V	3.3 mm			36.4 mm			17179869184 bit	3.135 V				NOR TYPE		42.8 mm	3.3
SD-FLASH-2GB-EV-EMOB	Phoenix Contact	CONFIGURATION MEMORY			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD				2147483648 words	3.3		8	UNCASED CHIP	DIE OR CHIP				85 Cel		2GX8	2G	-40 Cel			UPPER		R-XUUC-N		3.6 V							17179869184 bit	2.7 V				NOR TYPE			3.3
1624092	Phoenix Contact	CONFIGURATION MEMORY			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD				2147483648 words	3.3		8	UNCASED CHIP	DIE OR CHIP				85 Cel		2GX8	2G	-40 Cel			UPPER		R-XUUC-N		3.6 V							17179869184 bit	2.7 V				NOR TYPE			3.3
EPC16UI88N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		90 mA		3.3	3.3		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories		.8 mm	85 Cel				-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B88	3				66.7 MHz		Not Qualified		16777216 bit		e1	30	260	NOR TYPE	.00015 Amp

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.