Embedded MMC Flash Memory 10

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Type	Length	Programming Voltage (V)
MTFC2GMXEA-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	70 mA	2147483648 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	.5 mm	85 Cel	OPEN-DRAIN	2GX8	2G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm	52 MHz	11.5 mm	17179869184 bit	1.65 V		NAND TYPE	13 mm	1.8
MTFC4GMXEA-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	4294967296 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm	52 MHz	11.5 mm	34359738368 bit	1.65 V		NAND TYPE	13 mm	1.8
MTFC16GLXAM-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	17179869184 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	.5 mm	85 Cel	OPEN-DRAIN	16GX8	16G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	1 mm	52 MHz	11.5 mm	137438953472 bit	1.65 V		NAND TYPE	13 mm	1.8
MTFC32GLXDM-WT	Micron Technology	Embedded MMC	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	34359738368 words	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20	.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	1.2 mm	52 MHz	11.5 mm	274877906944 bit	1.65 V		NAND TYPE	13 mm	1.8
MTFC8GLXEA-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	8589934592 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm	52 MHz	11.5 mm	68719476736 bit	1.65 V		NAND TYPE	13 mm	1.8
KLMCG8GESD-B04Q	Samsung	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			68719476736 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	.5 mm	105 Cel		64GX8	64G	-40 Cel	BOTTOM		R-PBGA-B153		1 mm		11.5 mm	549755813888 bit		CAN BE OPERATED AT 3.3V SUPPLY	NOR TYPE	13 mm	1.8
MTFC32GJXED-WT	Micron Technology	Embedded MMC	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	34359738368 words	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.4 mm	52 MHz	14 mm	274877906944 bit	1.65 V		NAND TYPE	18 mm	1.8
MTFC32GLXDI-WT	Micron Technology	Embedded MMC	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	34359738368 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20	.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.2 mm	52 MHz	12 mm	274877906944 bit	1.65 V		NAND TYPE	16 mm	1.8
MTFC64GJXEF-WT	Micron Technology	Embedded MMC	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	68719476736 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20	.5 mm	85 Cel	OPEN-DRAIN	64GX8	64G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.2 mm	52 MHz	14 mm	549755813888 bit	1.65 V		NAND TYPE	18 mm	1.8
MTFC16GLXDV-WT	Micron Technology	Embedded MMC	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	17179869184 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20	.5 mm	85 Cel	OPEN-DRAIN	16GX8	16G	-25 Cel	BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1 mm	52 MHz	12 mm	137438953472 bit	1.65 V		NAND TYPE	16 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.