100 Flash Memory 469

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F256G08CMAAAH2:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F512G08CUCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CKAAAH3ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08CFAABH1-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08AMCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40	Flash Memories	1 mm	70 Cel			16GX8	16G	0 Cel	16K	YES		YES	BOTTOM	R-PBGA-B100					Not Qualified	137438953472 bit			8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F128G08CFAABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08CECABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08CEAAAH3Z:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08CFAABH3-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH3-10:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBCABH3-12:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F512G08CUCABH1-12:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel			64GX8	64G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08AJABAH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		68719476736 bit	2.7 V			e1			SLC NAND TYPE		18 mm		2.7
MT29F256G08CJAAAH1IT:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F512G08CUCABH3-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			64GX8	64G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F512G08CUAAAH3IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MTFC8GLWDQ-3LAATA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40		1 mm	105 Cel			8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm		68719476736 bit	2.7 V						NAND TYPE		18 mm
MT29F128G08CFAABH3-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08AUABAH2-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH1-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBCABH2-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBCABH2-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08CEAAAH2Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08AJABAH3-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		68719476736 bit	2.7 V			e1			SLC NAND TYPE		18 mm		2.7
MT29F512G08CUCABH2-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MTFC32GJWDQ-4LAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40		1 mm	85 Cel			32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B100	3.6 V	1.4 mm	52 MHz	14 mm		274877906944 bit	2.7 V						NAND TYPE		18 mm
MT29F64G08AKABAH2-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		68719476736 bit	2.7 V			e1			SLC NAND TYPE		18 mm		2.7
MT29F64G08CBAAAH1IT:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBAAAH3IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08AUCABH3-10Z	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	1M	50 mA	34359738368 words	3.3	YES		8	GRID ARRAY	BGA100,10X17,40		1 mm	70 Cel	NO		32GX8	32G	0 Cel	32K			YES	BOTTOM	R-PBGA-B100	3.6 V	1.65 mm		12 mm		274877906944 bit	2.7 V	SEATED HGT_CALCULATED	8K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm	20 ns	3.3
MT29F64G08CBAAAH3:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CKCABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH2-12:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MTFC8GLWDQ-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40		1 mm	85 Cel			8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm		68719476736 bit	2.7 V						NAND TYPE		18 mm
MT29F256G08CMAAAH1IT:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08AMCBBH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		68719476736 bit	2.7 V			e1			SLC NAND TYPE		18 mm		2.7
MT29F256G08CKCABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F128G08AKCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40	Flash Memories	1 mm	70 Cel			16GX8	16G	0 Cel	16K	YES		YES	BOTTOM	R-PBGA-B100					Not Qualified	137438953472 bit			8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F64G08CBAABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F512G08CUAAAH1IT:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm		549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBAABH3-12:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.4 mm		12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08AUCABH3-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40	Flash Memories	1 mm	70 Cel					0 Cel	32K	YES		YES	BOTTOM	R-PBGA-B100					Not Qualified	274877906944 bit			8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F256G08CKAAAH2:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MTFC4GLMDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40		1 mm	85 Cel		OPEN-DRAIN	4GX8	4G	-40 Cel					BOTTOM	R-PBGA-B100	3.6 V	1.4 mm	52 MHz	14 mm		34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm		2.7
MT29F128G08CFAABH2-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100	3.6 V	1.2 mm		12 mm		137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F16G08ABCBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	1.8,3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories	1 mm	70 Cel			2GX8	2G	0 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B100	3.6 V	1 mm		12 mm	Not Qualified	17179869184 bit	2.7 V		4K	e1			SLC NAND TYPE	.00005 Amp	18 mm	20 ns	2.7	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.