16 Flash Memory 2,090

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FS256SDSMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4			2	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm	1.8
S25FL128LAGMFA001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	10.3 mm	3
S25FL512SDSMFBR11	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	10.3 mm	3
S25FL128LAGMFNP03	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	70 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	50 MHz	7.5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00005 Amp	10.3 mm	3
S25FL128SDSMFIG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		80 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		10.3 mm	3
S25FS512SAGMFM011	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.0001 Amp	10.3 mm	1.8
S70FS01GSAGMFV010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	SMALL OUTLINE		2			1.27 mm	105 Cel		256MX4	256M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2 V	2.65 mm		133 MHz	7.5 mm					1073741824 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH	e3					10.3 mm	1.8
S25HS01GTDSMHM011	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	53 mA	134217728 words	1.8		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	125 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		2 V	2.65 mm	300000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		1073741824 bit	1.7 V					NOR TYPE	.0000013 Amp	10.3 mm	1.8
S25FL512SDSMFAR11	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	10.3 mm	3
S25FL512SAGMFAR11	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	10.3 mm	3
S25FL256SDSMFBG03	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		80 MHz	7.5 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e3					10.3 mm	3
S25FL128SDSMFMR13	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		80 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		10.3 mm	3
S70FL01GSAGMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	3		8	SMALL OUTLINE					1.27 mm	125 Cel		128MX8	128M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					1073741824 bit	2.7 V					NOR TYPE		10.3 mm	3
S25FL256SAGMFB001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		10.3 mm	3
S25HS01GTDSMHV013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	53 mA	134217728 words	1.8		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		2 V	2.65 mm	300000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		1073741824 bit	1.7 V					NOR TYPE	.0000013 Amp	10.3 mm	1.8
S25FL128SDSMFA011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		80 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		10.3 mm	3
S25FL256LDPMFV403	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		66 MHz	7.5 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		10.3 mm	3
S25FS512SDSMFN013	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		4	SMALL OUTLINE		2			1.27 mm	125 Cel		128MX4	128M	-40 Cel		DUAL		R-PDSO-G16		2 V	2.65 mm		80 MHz	7.5 mm				BOTTOM	536870912 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH				NOR TYPE		10.3 mm	1.8
S25FS256SAGMFB003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4			2	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm	1.8
S25FL256SAGMFV003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0003 Amp	10.3 mm	3
S25HS256TDPMHB013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		2 V	2.65 mm	300000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	10.3 mm	1.8
S25FL256SAGMFB011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		10.3 mm	3
S25FS256SAGMFV000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4			2	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	1.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm	1.8
S25FS512SDSMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		4	SMALL OUTLINE		2			1.27 mm	125 Cel		128MX4	128M	-40 Cel		DUAL		R-PDSO-G16		2 V	2.65 mm		80 MHz	7.5 mm				BOTTOM	536870912 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH				NOR TYPE		10.3 mm	1.8
S25FL256SAGMFVG13	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE	.0003 Amp	10.3 mm	3
S25FL256SAGMFIG11	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm	3
S70FL01GSAGMFB013	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		1073741824 bit	2.7 V		e3			NOR TYPE		10.3 mm	3
S70FL01GSDSMFV011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		1073741824 bit	2.7 V					NOR TYPE	.0006 Amp	10.3 mm	3
S70FL01GSDPMFV013	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V		e3			NOR TYPE	.0006 Amp	10.3 mm	3
S25FL128LAGMFA003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S25FL256LAGMFV401	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		10.3 mm	3
S25FL128SAGMFM011	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260	NOR TYPE		10.3 mm	3
S25FL256SAGMFIR03	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm	3
S25HS256TFAMHV010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		2 V	2.65 mm	300000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	10.3 mm	1.8
S25FL256LDPMFI401	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		66 MHz	7.5 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1				NOR TYPE		10.3 mm	3
S25HS256TDSMHA013	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	HARDWARE	R-PDSO-G16		2 V	2.65 mm	300000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0000013 Amp	10.3 mm	1.8
S25FL128LDPMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S25FL128SAGMFMR01	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260	NOR TYPE		10.3 mm	3
S25FL512SDSMFAR10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	10.3 mm	3
S25FL512SAGMFMG11	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	Matte Tin (Sn)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	10.3 mm	3
S25FL128LDPMFA001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	10.3 mm	3
S25FL064LABMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		108 MHz	7.5 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					10.3 mm	3
S25FL128SDSMFV013	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE					1.27 mm	105 Cel		16MX8	16M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		80 MHz	7.5 mm		500 ms		BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE		10.3 mm	3
S25FL064LABMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		108 MHz	7.5 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					10.3 mm	3
S25FS512SAGMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.0001 Amp	10.3 mm	1.8
S25FL512SDSMFNR13	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	3		4	SMALL OUTLINE		2			1.27 mm	125 Cel		128MX4	128M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		80 MHz	7.5 mm					536870912 bit	2.7 V	IT IS ALSO CONFIGURED AS 512M X 1				NOR TYPE		10.3 mm	3
S25FS512SAGMFB010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		536870912 bit	1.7 V		e3			NOR TYPE	.0001 Amp	10.3 mm	1.8
S25FL256SAGMFMR01	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		4	SMALL OUTLINE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1				NOR TYPE		10.3 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.