16 Flash Memory 2,090

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FL256LAGMFV000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S70FS01GSDSMFI010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		256MX4	256M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G16	3	2 V	2.65 mm		80 MHz	7.5 mm					1073741824 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X1	e3					10.3 mm	1.8
IS37SML01G1-MLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		104 MHz	7.49 mm					1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		10.31 mm	3.3
M25P64-VMF6G	STMicroelectronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	50 MHz	7.5 mm	Not Qualified	15 ms	SPI		67108864 bit	2.7 V			10	260	NOR TYPE	.00005 Amp	10.3 mm	2.7
MX25L3206EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3.3	3/3.3	2	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		16MX2	16M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.00002 Amp	10.3 mm	3.3
MX25U25645GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	SMALL OUTLINE		4			1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.52 mm					268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1						10.3 mm	1.8
MX25U51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	67108864 words	1.8		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.52 mm			SPI		536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm	1.8
MX25UM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL			R-PDSO-G16		2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm	1.8
N25Q256A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	268435456 words	3	3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		256MX1	256M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm	3
N25Q256A81ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL			R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	1.7 V							10.3 mm	1.8
S25FL129P0XMFI001	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI		134217728 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL129P0XMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.3 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified	50 ms	SPI		134217728 bit	2.7 V		e3	40	260	NOR TYPE	.00001 Amp	10.3 mm	3
AT25DF641-S3H-B-SL551	Adesto Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		100 MHz	7.5 mm					67108864 bit	2.7 V							10.3 mm	3
IS25LP512M-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					536870912 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm	3
MX25LM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	2.7 V							10.3 mm	3
MX25U12832FMI02	Macronix	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		134217728 bit	1.65 V					NOR TYPE	.000005 Amp	10.3 mm	1.8
MX25U51245GMI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G16	3	2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT	e3			NOR TYPE		10.3 mm	1.8
N25Q128A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm	3
N25Q256A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V			30	260	NOR TYPE		10.3 mm	3
S25FL128LAGMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S25FL129P0XMFI000	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI		134217728 bit	2.7 V					NOR TYPE	.00001 Amp	10.3 mm	3
S25FL256LAGMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S25FL256SAGMFVR03	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0003 Amp	10.3 mm	3
S70FL01GSAGMFV010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V		e3			NOR TYPE	.0006 Amp	10.3 mm	3
EPCQ64SI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3.3		1	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL			R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm		8 ms			67108864 bit	2.7 V		e4	20	260	NOR TYPE	.0001 Amp	10.3 mm	2.7
IS25LP128F-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.49 mm			SPI		134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	10.31 mm	3
IS25LP256D-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		8	SMALL OUTLINE					1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					268435456 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm	3
IS25LP256E-JMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		166 MHz	7.49 mm					268435456 bit	2.3 V							10.31 mm	3
IS25WP064A-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	SMALL OUTLINE					1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			R-PDSO-G16		1.95 V	2.65 mm		133 MHz	7.49 mm					67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm	1.8
MX25L12845GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 MBIT X 1	e3					10.3 mm	3
MX25U12835FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	33554432 words	1.8	1.8	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	2 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		134217728 bit	1.65 V	CAN BE ORGANISED AS 128 MBIT X 1	e3			NOR TYPE	.00002 Amp	10.3 mm	1.8
MX35LF2GE4AB-MI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	268435456 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel	MATTE TIN	DUAL		HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		2147483648 bit	2.7 V		e3			SLC NAND TYPE	.00005 Amp	10.3 mm	3
N25Q128A13ESFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm	3
S25FL064P0XMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE	SOP16,.4			0.2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI		67108864 bit	2.7 V		e3			NOR TYPE	.00001 Amp	10.3 mm	3
S25FL128LAGMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	10.3 mm	3
S25FL128SAGMFBR00	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260			10.3 mm	3
S25FL256SAGMFIG00	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm	3
S25FL256SAGMFIG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm	3
S25FL512SDPMFIG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm	3
S25FL512SDSMFV010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		512753664 bit	2.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm	3
S25HL01GTFAMHI010	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4			25	1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL		HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm	3
SST25VF080B-50-4I-ZCE	Microchip Technology	FLASH	INDUSTRIAL	16	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	30 mA	8388608 words			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X2,20			100	.5 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel		BOTTOM	1	HARDWARE/SOFTWARE	S-PBGA-B16		3.6 V	.4 mm	100000 Write/Erase Cycles	50 MHz	2 mm			SPI		8388608 bit	2.7 V					NOR TYPE	.00003 Amp	2 mm
W25M512JVFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm					536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.31 mm	3
W25Q64FVSFIG	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm	Not Qualified		SPI		67108864 bit	3 V						.00005 Amp	10.31 mm
W25R256JVFIQ	Winbond Electronics	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL		SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00012 Amp	10.31 mm	3
IS25LP032D-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm	3
IS25WP512M-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		1.95 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		536870912 bit	1.65 V		e3	10	260	NOR TYPE	.00014 Amp	10.31 mm	1.8
MT25QL256ABA8ESF-MSIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		8	SMALL OUTLINE					1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.