44 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29F400BT-90SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	28.2 mm		90 ns	5	YES
AM29F400BT-90SI	Cypress Semiconductor	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		256KX16	256K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE		28.2 mm		90 ns	5
AM29F800BB-70SF	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	28.2 mm		70 ns	5	YES
AM29LV400BT90SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	3.6 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	28.2 mm		90 ns	3	YES
AM29F800BB-55SF	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
AM29F800BB-70SI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		70 ns	5	YES
AM29F800BB-90SI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		90 ns	5	YES
AM29F400BB-70SE	Cypress Semiconductor	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel		256KX16	256K	-55 Cel			TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE		28.2 mm		70 ns	5
M29W800DT70M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm		13.3 mm	Not Qualified		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	70 ns	3	YES
MX29F800CBMI-70G	Macronix	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN	YES	DUAL	R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00005 Amp	28.5 mm		70 ns	5	YES
AM29F800BB-55SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
AM29F800BB-55SE	Spansion	FLASH	MILITARY	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-55 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
AM29F800BB-55SI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
M29F800DB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
AT29C1024-70JI	Atmel	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		NO	TIN LEAD		QUAD	S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
AM29F400BB-70SF	Cypress Semiconductor	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		28.2 mm		70 ns	5
AT29C1024-70JC	Atmel	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		NO	TIN LEAD		QUAD	S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
MT28F800B3SG-9T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
PA28F400B5B60	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.95 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	CONFG AS 256K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		70 ns	5	NO
PA28F400B5T80	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.95 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	CONFG AS 256K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		80 ns	5	NO
AB28F400B5B80	Intel	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel		512KX8	512K	-40 Cel					DUAL	R-PDSO-G44		5.5 V	2.95 mm		13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	MIN 100K EXTENDED BLOCK ERASE CYCLES; CAN BE CONFG AS 125KX16; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		80 ns	5
AM29F200BT-50SI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3	5.25 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	2097152 bit	4.75 V	MIN 1000K WRITE/ERASE CYCLE ;20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	28.2 mm		50 ns	5	YES
AM29F400BT-55SF	Cypress Semiconductor	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G44		5.25 V	2.8 mm		13.3 mm			TOP	4194304 bit	4.75 V	TOP BOOT BLOCK		e3			NOR TYPE		28.2 mm		55 ns	5
AM29F800BT-55SF	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
AM29PL160CB-65RSI	Spansion	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,224K,256K	50 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G44	3	3.6 V	2.8 mm		13.3 mm	Not Qualified		BOTTOM	16777216 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	28.2 mm	YES	65 ns	3	YES
M29F800FT55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm		12.6 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
PA28F008SA-85	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.95 mm		13.3 mm	Not Qualified			8388608 bit	4.5 V	DEEP POWER-DOWN		e0			NOR TYPE	.0000012 Amp	28.2 mm		85 ns	12	NO
TMS28F210-15C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		YES			QUAD	S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
TMS28F008ASYB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE					1.27 mm	70 Cel		512KX16	512K	0 Cel					DUAL	R-PDSO-G44		3.6 V	2.625 mm		13.3 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		70 ns	3
TMS29LF800B-120SE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44				100000 Write/Erase Cycles		Not Qualified		BOTTOM	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			120 ns		YES
TMS28F800VB10BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G44		3.6 V	2.63 mm		13.3 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	3
TMS28F004AMT60CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44		5.5 V	2.63 mm		13.3 mm	Not Qualified		TOP	4194304 bit	3 V						NOR TYPE		28.2 mm		60 ns	12
TMS28F200AFB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-G44		5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		60 ns	5	NO
TMS28F800ASYB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G44		3.6 V	2.625 mm		13.3 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		80 ns	3
TMS28F400AMB60BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL	R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm		110 ns	12	NO
TMS28F008ASYB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE					1.27 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G44		3.6 V	2.625 mm		13.3 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		80 ns	3
TMS28F800AVB-120BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G44		3.6 V	2.63 mm		13.3 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		120 ns	3
TMS28F400BZB-80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL	R-PDSO-G44		5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK					NOR TYPE	.000008 Amp	28.2 mm		80 ns	12	NO
TMS28F008AEYT12BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE					1.27 mm	85 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G44		5.5 V	2.625 mm		13.3 mm			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							28.2 mm		120 ns	5
TMS28F800AVYB80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL	R-PDSO-G44		3.6 V	2.625 mm		13.3 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		80 ns	3
TMS28F400ASB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-G44		3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		110 ns	5	NO
TMS28F800EB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL	R-PDSO-G44		3.6 V	2.63 mm		13.3 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	3
TMS28F800AZYB12CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G44		5.5 V	2.625 mm		13.3 mm			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							28.2 mm		120 ns	5
TMS28F800AEB-70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES			DUAL	R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE	.000008 Amp	28.2 mm		100 ns	3	NO
TMS28F200AEB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES			DUAL	R-PDSO-G44		3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	2097152 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		150 ns	5	NO
TMS28F400AET70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-G44		3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	4194304 bit	2.7 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		130 ns	5	NO
TMS28F004AFT60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel					DUAL	R-PDSO-G44		5.5 V	2.63 mm		13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP					NOR TYPE		28.2 mm		60 ns	5
TMS29F800T-100BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	125 Cel		1MX8	1M	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44		5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	8388608 bit	4.5 V	CAN ALSO BE CONFIGURED AS 512K X 16			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm		100 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.