44 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F400BZT-70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	DEEP POWER-DOWN			NOR TYPE	.0000012 Amp	28.2 mm	70 ns	12	NO
TMS28F200AFT80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	80 ns	5	NO
TMS28F800ZB70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	70 ns	3
TMS28F200BZB80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000012 Amp	28.2 mm	80 ns	12	NO
TMS29F400B-90BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G44			10000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		90 ns		YES
TMS28F210-17C2FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F800EB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel		1MX8	1M	0 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	100 ns	3
TMS28F800AVT-80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; TOP BOOT BLOCK			NOR TYPE		28.2 mm	80 ns	3
TMS28F008AEYT12BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE				1.27 mm	70 Cel		512KX16	512K	0 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					28.2 mm	120 ns	5
TMS28F002AET60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	5	NO
TMS28F210-15C2FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F800ALYT10BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					28.2 mm	100 ns	5
TMS28F800AEYT10BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		1MX8	1M	0 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					28.2 mm	100 ns	5
TMS28F800ZB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	80 ns	3
TMS28F008ALYB10BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE				1.27 mm	85 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					28.2 mm	100 ns	5
TMS28F800ASYB12CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		1MX8	1M	0 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					28.2 mm	120 ns	5
TMS28F002AFB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	80 ns	5	NO
TMS28F200AZB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	12	NO
TMS28F800SB70BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	125 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	100 ns	3
TMS28F200AFT60CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	5	NO
TMS28F400AZB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G44	5.5 V	2.625 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER CONFG AS 256K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	70 ns	12	NO
TMS28F800AVB70CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	100 ns	3
TMS28F008AZYT70CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	85 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					28.2 mm	70 ns	3
TMS28F008ASYT80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					28.2 mm	80 ns	3
TMS28F008AZYB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					28.2 mm	80 ns	3
TMS28F400AET70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	2.7 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	130 ns	5	NO
TMS28F800SB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	120 ns	3
TMS28F004AEB70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP			NOR TYPE		28.2 mm	70 ns	5
TMS28F008AEYB70CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	85 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					28.2 mm	70 ns	3
TMS28F008ASYT70BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					28.2 mm	70 ns	3
TMS28F002AZB90BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	90 ns	12	NO
TMS28F800VT12CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel		1MX8	1M	0 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK			NOR TYPE		28.2 mm	120 ns	3
TMS28F200AMT80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	3 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	150 ns	12	NO
TMS28F800AEYT10BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					28.2 mm	100 ns	5
TMS29F400T-90BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 256K X 16	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	90 ns	5	YES
TMS28F800AVT70CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; TOP BOOT BLOCK			NOR TYPE		28.2 mm	100 ns	3
TMS29LF800B-100CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	100 ns	2.7	YES
TMS28F800VB12BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	125 Cel		1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	120 ns	3
TMS28F200AFB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	5	NO
TMS28F004AST80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	TOP	4194304 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP			NOR TYPE		28.2 mm	80 ns	5
TMS28F800AVB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel		1MX8	1M	0 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	100 ns	3
TMS28F008ALYT80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					28.2 mm	80 ns	3
TMS28F400AZB70CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	70 ns	12	NO
TMS28F200BZB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000012 Amp	28.2 mm	70 ns	12	NO
TMS28F800AEB-70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	28.2 mm	100 ns	3	NO
TMS28F004AZB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V				NOR TYPE		28.2 mm	60 ns	12
TMS28F008AEYB12CDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE				1.27 mm	85 Cel		512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					28.2 mm	120 ns	5
TMS28F200AZB80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	80 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.