44 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F102BB55K1E	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES			QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.585 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.586 mm		55 ns	5	YES
M29F800DT90M3T	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn85Pb15)	YES	DUAL	R-PDSO-G44	5.5 V	2.8 mm		13.3 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
M28F102-120K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.5862 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	16.5862 mm		120 ns	12	NO
M29F200B-55M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M29F400T-120XM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE		16		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.75 V						NOR TYPE		28.2 mm		120 ns	5
M29F100BB90M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M28F410-100M1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	12
M28F220-90M6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16		1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		90 ns	12
M29W400DB55M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	3	YES
M29F400B-70M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29W400BT55M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		55 ns	3	YES
M28V161-120M1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M	0 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	3 V	100000 PROGRAM/ERASE CYCLES; SECTOR ERASE					NOR TYPE		28.2 mm		120 ns	12
M29F800DB55M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn85Pb15)	YES	DUAL	R-PDSO-G44	5.5 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	28.2 mm	YES	55 ns	5	YES
M29W160DT90M6F	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE		8		1.27 mm	85 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	250	NOR TYPE		28.2 mm		90 ns	3
M29W800T-100M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V			e3			NOR TYPE	.0001 Amp	28.2 mm		100 ns	3	YES
M29F200BT70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M28F102-200XK1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.25 V	4.57 mm		16.5862 mm	Not Qualified		1048576 bit	4.75 V			e0			NOR TYPE	.0001 Amp	16.5862 mm		200 ns	12	NO
M28V430-150M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44			10000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.000005 Amp			150 ns		NO
M29W800DXT45M6T	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	45 ns	3	YES
M28F410-90M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		90 ns	12	NO
M29F102BB55K1F	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES	MATTE TIN		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.585 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	16.586 mm		55 ns	5	YES
M29F100BT90M6T	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29W800T-120M5TR	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	85 Cel	3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		120 ns	3	YES
M29F800AB90M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	28.2 mm		90 ns	5	YES
M28W440-180M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE		16		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	3.3 V	2.62 mm		13.3 mm	Not Qualified		4194304 bit	2.7 V								28.2 mm		180 ns	12
M29F400B-70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29W400BB90M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		90 ns	2.7	YES
M29W160DB90M1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE		8		1.27 mm	70 Cel		1MX16	1M	0 Cel					DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	250	NOR TYPE		28.2 mm		90 ns	3
M29F102BB50K1F	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES	MATTE TIN		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.585 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	16.586 mm		50 ns	5	YES
M29W400B-150M6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00005 Amp	28.2 mm		150 ns	2.7	YES
M29F400BB55MT6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN/NICKEL PALLADIUM GOLD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	40	245	NOR TYPE	.0001 Amp	28.5 mm		55 ns	5	YES
M29F400BT45M3T	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		45 ns	5	YES
M29F400BB70M3E	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F400BB90MT1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M29F016B90M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	70 Cel		2MX8	2M	0 Cel	32	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	4.5 V			e3			NOR TYPE	.00015 Amp	28.2 mm		90 ns	5	YES
M28W430-150M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE		16		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	3.3 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	2.7 V						NOR TYPE		28.2 mm		150 ns	12
M28F210-70YM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		28.2 mm		70 ns	12
M29F400B-70M1R	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8		1.27 mm	70 Cel		256KX16	256K	0 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		70 ns	5
M28V410M	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words				8	SMALL OUTLINE					70 Cel		512KX8	512K	0 Cel					DUAL	R-PDSO-G44	5.5 V				Not Qualified	TOP	4194304 bit	3 V	CONFIGURABLE AS 256K X 16					NOR TYPE				120 ns	3
M29F400B-90XM6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE		16		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V						NOR TYPE		28.2 mm		90 ns	5
M29F200B-70M6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M28F210-70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44			100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.00005 Amp			70 ns		NO
M58WR016KU70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B44	2 V	1 mm		5 mm	Not Qualified	TOP	16777216 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		40	260	NOR TYPE	.00001 Amp	7.5 mm	YES	70 ns	1.8	NO
M28F210-120YM1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		256KX8	256K	0 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		28.2 mm		120 ns	12
M29F400T-55M3R	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8		1.27 mm	125 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK					NOR TYPE		28.2 mm		55 ns	5
M59PW032100M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	70 Cel		2MX16	2M	0 Cel	16	YES	Matte Tin (Sn)		DUAL	R-PDSO-G44	3.6 V	3 mm		12.6 mm	Not Qualified		33554432 bit	2.7 V			e3			NOR TYPE	.0001 Amp	28.5 mm		100 ns	3	YES
M29F200BB70MT6F	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M28F220-70YM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16		1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		70 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.