44 Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M29F016B55M1

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

20 mA

2097152 words

5

YES

5

8

SMALL OUTLINE

SOP44,.63

Flash Memories

1.27 mm

70 Cel

2MX8

2M

0 Cel

32

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

16777216 bit

4.5 V

e0

NOR TYPE

.00015 Amp

28.2 mm

55 ns

5

YES

M29F800AT70M3T

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

8388608 bit

4.5 V

TOP BOOT BLOCK

e3

NOR TYPE

.00015 Amp

28.2 mm

70 ns

5

YES

M28F220-60M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

35 mA

262144 words

5

NO

5

8

SMALL OUTLINE

SOP44,.63

16

Flash Memories

1.27 mm

85 Cel

256KX8

256K

-40 Cel

1,2,1,1

YES

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.000008 Amp

28.2 mm

60 ns

12

NO

M29F800AT70M1T

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

8388608 bit

4.5 V

TOP BOOT BLOCK

e3

NOR TYPE

.00015 Amp

28.2 mm

70 ns

5

YES

M29W800AB100M1T

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

20

1.27 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

3.6 V

2.8 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK

e3

NOR TYPE

.0001 Amp

28.2 mm

100 ns

2.7

YES

M29F400BB90M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F400BT45M3E

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

40

245

NOR TYPE

.0001 Amp

28.2 mm

45 ns

5

YES

M28F210-70XM1

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

35 mA

131072 words

5

NO

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

128KX16

128K

0 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

100000 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.000005 Amp

70 ns

NO

M28F420-60M1

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

35 mA

524288 words

5

NO

5

8

SMALL OUTLINE

SOP44,.63

16

Flash Memories

1.27 mm

70 Cel

512KX8

512K

0 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.000005 Amp

28.2 mm

60 ns

12

NO

M29F400BB90M6E

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

40

245

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F400BT45M6F

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

40

245

NOR TYPE

.0001 Amp

28.2 mm

45 ns

5

YES

M28W440-150M1TR

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE

16

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

R-PDSO-G44

3.3 V

2.62 mm

13.3 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

NOR TYPE

28.2 mm

150 ns

12

M28F210-80M3TR

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

TOP

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK

NOR TYPE

28.2 mm

80 ns

12

M29W400B-120M1

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,7

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

3.6 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

.00005 Amp

28.2 mm

120 ns

2.7

YES

M59PW064100M1T

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

20 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

Flash Memories

1.27 mm

70 Cel

4MX16

4M

0 Cel

32

YES

Matte Tin (Sn)

DUAL

R-PDSO-G44

3.6 V

3 mm

12.6 mm

Not Qualified

67108864 bit

2.7 V

e3

NOR TYPE

.0001 Amp

28.5 mm

100 ns

12

YES

M29F400BB70M1T

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F400BB90M6T

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F400BT90MT3

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

3 mm

100000 Write/Erase Cycles

12.6 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.5 mm

70 ns

5

YES

M28F420-70XM1TR

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G44

5.25 V

2.62 mm

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.75 V

BOTTOM BOOT BLOCK

NOR TYPE

28.2 mm

70 ns

12

M28F220-120YM1TR

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

256KX8

256K

0 Cel

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

NOR TYPE

28.2 mm

120 ns

12

M29F100BT70M3T

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

65536 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

64KX16

64K

-40 Cel

1,2,1,1

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

TOP

1048576 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F400B-90M3

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

3-STATE

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

90 ns

5

YES

M28F420-90YM6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

35 mA

524288 words

5

NO

5

8

SMALL OUTLINE

SOP44,.63

16

Flash Memories

1.27 mm

85 Cel

512KX8

512K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.000008 Amp

28.2 mm

90 ns

12

NO

M28V841M

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

8

SMALL OUTLINE

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G44

5.5 V

Not Qualified

8388608 bit

3 V

NOR TYPE

200 ns

3

M29F400T-150XM5

STMicroelectronics

FLASH

OTHER

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-20 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

100000 Write/Erase Cycles

Not Qualified

TOP

4194304 bit

e0

NOR TYPE

.0001 Amp

150 ns

YES

M29R800D-150M1TR

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE

16

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

DUAL

R-PDSO-G44

3.6 V

2.62 mm

13.3 mm

Not Qualified

BOTTOM/TOP

8388608 bit

2.7 V

NOR TYPE

28.2 mm

150 ns

3

M29F102B-70K1

STMicroelectronics

FLASH

COMMERCIAL

44

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8K,4K,16K,32K

50 mA

65536 words

5

YES

5

16

CHIP CARRIER

LDCC44,.7SQ

Flash Memories

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

1,2,1,1

YES

TIN LEAD

QUAD

S-PQCC-J44

5.5 V

4.57 mm

16.5862 mm

Not Qualified

BOTTOM

1048576 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE

e0

NOR TYPE

.0001 Amp

16.5862 mm

70 ns

5

YES

M29W400BT120M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

3.6 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e3

NOR TYPE

.0001 Amp

28.2 mm

90 ns

2.7

YES

M29W400DB70M6F

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

MATTE TIN

YES

DUAL

R-PDSO-G44

3.6 V

2.8 mm

13.3 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

.0001 Amp

28.2 mm

70 ns

3

YES

M28F220-100YM6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

35 mA

131072 words

5

NO

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

100 Write/Erase Cycles

Not Qualified

BOTTOM

2097152 bit

e0

NOR TYPE

.000008 Amp

100 ns

NO

M28F420-100XM3TR

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G44

5.25 V

2.62 mm

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.75 V

100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK

NOR TYPE

28.2 mm

100 ns

12

M29F080A120M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

20 mA

1048576 words

5

YES

5

8

SMALL OUTLINE

SOP44,.63

Flash Memories

1.27 mm

85 Cel

1MX8

1M

-40 Cel

16

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

8388608 bit

4.5 V

e0

NOR TYPE

.00015 Amp

28.2 mm

90 ns

5

YES

M29F200BT45M6F

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

YES

DUAL

R-PDSO-G44

5.5 V

3 mm

100000 Write/Erase Cycles

12.6 mm

Not Qualified

TOP

2097152 bit

4.5 V

TOP BOOT BLOCK

40

245

NOR TYPE

.0001 Amp

28.5 mm

45 ns

5

YES

M29F400BB90M1T

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29W200BB70M1E

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

3.3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

128KX16

128K

0 Cel

1,2,1,3

YES

MATTE TIN/NICKEL PALLADIUM GOLD

YES

DUAL

R-PDSO-G44

3.6 V

2.8 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

2097152 bit

2.7 V

BOTTOM BOOT BLOCK

e3/e4

40

245

NOR TYPE

.0001 Amp

28.2 mm

70 ns

2.7

YES

M28F220-100YM3

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

35 mA

131072 words

5

NO

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

100 Write/Erase Cycles

Not Qualified

BOTTOM

2097152 bit

e0

NOR TYPE

.00005 Amp

100 ns

NO

M29F100BT90M3

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

65536 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

64KX16

64K

-40 Cel

1,2,1,1

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

13.3 mm

Not Qualified

TOP

1048576 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F400BT70M6E

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN/NICKEL PALLADIUM GOLD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e3/e4

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M29F200BT70M3F

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

YES

DUAL

R-PDSO-G44

5.5 V

3 mm

100000 Write/Erase Cycles

12.6 mm

Not Qualified

TOP

2097152 bit

4.5 V

TOP BOOT BLOCK

40

245

NOR TYPE

.0001 Amp

28.5 mm

70 ns

5

YES

M29W200BT120M6E

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

3.3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

MATTE TIN/NICKEL PALLADIUM GOLD

YES

DUAL

R-PDSO-G44

3.6 V

2.8 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

2097152 bit

2.7 V

TOP BOOT BLOCK

e3/e4

40

245

NOR TYPE

.0001 Amp

28.2 mm

90 ns

2.7

YES

M29F200B-70M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

70 ns

5

YES

M28F210-70XM1TR

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

256KX8

256K

0 Cel

DUAL

R-PDSO-G44

5.25 V

2.62 mm

13.3 mm

Not Qualified

TOP

2097152 bit

4.75 V

100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK

NOR TYPE

28.2 mm

70 ns

12

M28V430-120M6TR

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G44

3.6 V

2.62 mm

13.3 mm

Not Qualified

TOP

4194304 bit

3 V

10000 PROGRAM/ERASE CYCLES; BLOCK ERASE; USER CONFIGURABLE AS 256K X 16

NOR TYPE

28.2 mm

120 ns

12

M28V440-150M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

262144 words

3.3

NO

3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G44

10000 Write/Erase Cycles

Not Qualified

BOTTOM

4194304 bit

e0

NOR TYPE

.000005 Amp

150 ns

NO

M29F400BB55M3F

STMicroelectronics

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G44

5.5 V

2.62 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

40

245

NOR TYPE

.0001 Amp

28.2 mm

55 ns

5

YES

M29F102B-55XK1TR

STMicroelectronics

FLASH

COMMERCIAL

44

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

16

CHIP CARRIER

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

QUAD

S-PQCC-J44

5.25 V

4.57 mm

16.5862 mm

Not Qualified

BOTTOM

1048576 bit

4.75 V

100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE

NOR TYPE

16.5862 mm

55 ns

5

M29F400BT55MT1F

STMicroelectronics

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

MATTE TIN/NICKEL PALLADIUM GOLD

YES

DUAL

R-PDSO-G44

5.5 V

3 mm

100000 Write/Erase Cycles

12.6 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e3/e4

40

245

NOR TYPE

.0001 Amp

28.5 mm

55 ns

5

YES

M29W800AB120M5

STMicroelectronics

FLASH

OTHER

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

20

1.27 mm

85 Cel

512KX16

512K

-20 Cel

1,2,1,15

YES

Matte Tin (Sn)

YES

DUAL

R-PDSO-G44

3.6 V

2.8 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK

e3

NOR TYPE

.0001 Amp

28.2 mm

120 ns

2.7

YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.