8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
SST26VF032B-104V/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel		4MX8	4M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI	33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
W25Q16JVUXIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		2MX8	2M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.6 mm		133 MHz	2 mm				16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			3 mm	3
MX25L3233FM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1	e3			NOR TYPE	.00005 Amp	5.28 mm	3
W25Q80DVSNIGT	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		1MX8	1M	-40 Cel		TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm				8388608 bit	2.7 V		e3					4.85 mm	3
MX25R6435FM2IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel		MATTE TIN	DUAL			R-PDSO-G8	3	3.6 V	2.16 mm		33 MHz	5.23 mm				67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3					5.28 mm	3
AT45DB641E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	2.3		1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm				67108864 bit	1.7 V		e4					5.29 mm	1.8
AT45DB321D-SU-SL954	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI	33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 512 BYTES EACH	e3			NOR TYPE	.00001 Amp	5.29 mm	2.7
W25Q128JWSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	1.8
AT45DB321E-SHFHA-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm				33554432 bit	2.3 V		e4					5.29 mm	3
W25Q80DVUXIETR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	1		20	.5 mm	85 Cel		1MX8	1M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI	8388608 bit	2.7 V					NOR TYPE	.00005 Amp	3 mm	3
MX25V1635FM1I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.75 mm		80 MHz	3.9 mm				16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			4.9 mm	3
SST25VF080B-50-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI	8388608 bit	2.7 V		e4		260	NOR TYPE	.00003 Amp	5.275 mm
W25Q64JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
AT45DB041E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4		260	NOR TYPE	.00004 Amp	5.29 mm	3
LE25U40CMC-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.5	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e3	30	260	NOR TYPE	.00001 Amp	4.9 mm	2.7
AT25SF128A-SHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI	134217728 bit	2.7 V		e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	5.29 mm
M25P40-VMN6PB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4	30	260	NOR TYPE	.00001 Amp	4.9 mm	3
SST25VF080B-50-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI	8388608 bit	2.7 V		e4		260	NOR TYPE	.00003 Amp	5.275 mm
MX25L6433FM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	16777216 words	3		4	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel		16MX4	16M	-40 Cel		Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3	40	260	NOR TYPE	.00002 Amp	5.28 mm	3
MT25QL512ABB1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		512MX1	512M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm				536870912 bit	2.7 V			30	260			8 mm	3
SST26VF064B-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI	67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm	3
AT45DB161D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI	16777216 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 528 BYTES EACH	e3	40	260	NOR TYPE	.000025 Amp	5.29 mm	2.7
AT45DB041E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4			NOR TYPE	.00004 Amp	5.29 mm	3
MT25QU256ABA1EW7-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		256MX1	256M	-40 Cel			DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	5 mm				268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
W25Q32JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	33554432 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
M25P64-VME6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified	15 ms	SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	2.7
IS25LP128-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2	1		20	1.27 mm	105 Cel	3-STATE	128MX1	128M	-40 Cel	NO	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			4-WIRE	134217728 bit	2.3 V		e3					6 mm	2.7	NO
AT45DB641E-MWHN-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	2.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm				67108864 bit	1.7 V		e4		260			8 mm	1.8
MX25L12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel		TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 128M X 1	e3			NOR TYPE	.00002 Amp	5.28 mm	3
SST26VF016B-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm	3
AT25XE041B-MAHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		4MX1	4M	-40 Cel			DUAL			R-PDSO-N8	1	3.6 V	.6 mm		85 MHz	2 mm				4194304 bit	1.65 V							3 mm	1.8
AT45DB041E-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4		260	NOR TYPE	.00004 Amp	4.925 mm	3
MT25QU128ABA1ESE-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel			DUAL			S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm				134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		5.285 mm	1.8
SST25VF016B-50-4C-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI	16777216 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm
SST26VF016B-104I/SN-RN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm	3
SST25VF080B-50-4I-S2AE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm			SPI	8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
MX25L12833FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE		4			1.27 mm	85 Cel		16MX8	16M	-40 Cel		TIN	DUAL			R-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm				134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1	e3					5.28 mm	3
S25FL256LAGNFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	8 mm	3
W25Q16JVSSIQ-T	Winbond Electronics	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.00005 Amp	5.23 mm	3
IS25LP016D-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel		Tin (Sn)	DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		133 MHz	3.9 mm				16777216 bit	2.3 V		e3		260	NOR TYPE		4.9 mm	3
IS25LP064A-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		64MX1	64M	-40 Cel			DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				67108864 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
SST25VF016B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel		NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI	16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
SST26VF016BT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V		e3		260	NOR TYPE	.000025 Amp	4.9 mm	3
MX25L1606EM1I-12GTR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm			SPI	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1				NOR TYPE	.00002 Amp	4.9 mm	3
N25Q128A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI	134217728 bit	1.7 V			30	260	NOR TYPE	.00001 Amp	5.285 mm	3
SST26VF064BEUI-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI	67108864 bit	2.7 V		e3	30	260	NOR TYPE	.045 Amp	6 mm
IS25LP064A-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel		TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	67108864 bit	2.3 V		e3	30	260	NOR TYPE	.000035 Amp	6 mm	3
W25Q64JVZEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.