8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
W25Q64FVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm	Not Qualified	SPI	67108864 bit	3 V		e3	30	260		.00005 Amp	5.28 mm
SST25VF080B-50-4I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm		SPI	8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
W25Q32JVSNIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm			33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		NOT SPECIFIED	NOT SPECIFIED			4.9 mm	3
W25Q16JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE					1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm			16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
M25P32-VME6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified	SPI	33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	8 mm	2.7
MX25L3233FM1I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI	33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm	3
AT45DB041E-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified	SPI	4194304 bit	2.3 V		e4			NOR TYPE	.00004 Amp	4.925 mm	3
AT45DB641E-MHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	2.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	1	3.6 V	.6 mm		85 MHz	5 mm			67108864 bit	1.7 V		e4					6 mm	1.8
SST26VF016-80-5I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified	SPI	16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	5.275 mm
SST26VF032B-104I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
AT45DB161E-SSHD-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	26 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified	SPI	16777216 bit	2.5 V		e4		260	NOR TYPE	.00001 Amp	4.925 mm	2.7
SST25VF016B-75-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified	SPI	16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
N25Q256A13EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	268435456 words			1	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.3			20	1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm	Not Qualified	SPI	268435456 bit	2.7 V			30	260	NOR TYPE	.00025 Amp	8 mm
MX25R8035FZUIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		2MX4	2M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm			8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED			3 mm	1.8
AT25SF641B-SHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	19 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.24 mm		SPI	67108864 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp	5.29 mm	3
MX25L25645GM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm		SPI	268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm	3
SST26VF064B-104I/MN	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	8 mm	3
IS25LP032D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel	Tin (Sn)	DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm			33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
IS25LP256D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	33554432 words	3		8	SMALL OUTLINE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.85 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm	3
SST26VF016B-104V/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000025 Amp	4.9 mm	3
MX25L51245GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel	TIN	DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	6 mm			536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH	e3					8 mm	3
MX25L8006EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3	3/3.3	2	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		4MX2	4M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm	Not Qualified	SPI	8388608 bit	2.7 V		e3			NOR TYPE	.00001 Amp	4.9 mm	2.7
AT45DB641E-MWHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	2.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm			67108864 bit	1.7 V		e4		260			8 mm	1.8
AT25SF041-SHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm		104 MHz	5.24 mm		SPI	4194304 bit	2.5 V					NOR TYPE	.000025 Amp	5.29 mm	3
AT45DB641E-MHN-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	2.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	1	3.6 V	.6 mm		85 MHz	5 mm			67108864 bit	1.7 V		e4					6 mm	1.8
MT25QL01GBBB1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1073741824 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1GX1	1G	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm			1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	3
AT45DB642D-CNU-SL954	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	SPI	67108864 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 1024 BYTES EACH	e3			NOR TYPE	.000015 Amp	8 mm	2.7
AT25DF081A-SSH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified	SPI	8388608 bit	2.7 V		e4		260	NOR TYPE	.00001 Amp	4.925 mm
MT25QU128ABA1EW7-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	5 mm			134217728 bit	1.7 V							6 mm	1.8
AT45DB161D-SU-SL954	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified	SPI	16777216 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 512 BYTES EACH	e3			NOR TYPE	.000025 Amp	5.29 mm	2.7
AT45DB161D-SU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified	SPI	16777216 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 512 BYTES EACH	e3			NOR TYPE	.000025 Amp	5.29 mm	2.7
MX25L6433FZNI-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2		20	1.27 mm	85 Cel		16MX4	16M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm	3
IS25LQ040B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		4MX1	4M	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm			4194304 bit	2.3 V		e3	30	260			4.9 mm	3
M25P40-VMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	SPI	4194304 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
S25FL128LAGMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm	3
W25Q80DVUXIE	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		Flash Memories	20	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	Not Qualified	SPI	8388608 bit	2.7 V					NOR TYPE	.00006 Amp	3 mm	3
SST26VF016BT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI	16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000025 Amp	5.26 mm	3
MX25U25645GZ4I00	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		4			1.27 mm	85 Cel		32MX8	32M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm			268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1	e3					8 mm	1.8
N25Q128A13EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.20		Flash Memories	20	1.27 mm	85 Cel	TOTEM POLE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	134217728 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	8 mm	3
MT25QU256ABA1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm			268435456 bit	1.7 V			30	260	NOR TYPE		8 mm	1.8
S25FL128LAGNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	6 mm	3
IS25LP128F-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	166 MHz	5.28 mm		SPI	134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	5.28 mm	3
MT25QU128ABA1ESE-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL			S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm			134217728 bit	1.7 V			30	260			5.285 mm	1.8
MX25V8035FM1I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		2MX4	2M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		108 MHz	3.9 mm			8388608 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 8M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			4.9 mm	3
SST25VF080B-50-4C-PAE	Microchip Technology	FLASH	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	IN-LINE	DIP8,.3		Flash Memories	100	2.54 mm	70 Cel	3-STATE	8MX1	8M	0 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.334 mm	100000 Write/Erase Cycles	50 MHz	7.62 mm	Not Qualified	SPI	8388608 bit	2.7 V		e3			NOR TYPE	.00003 Amp	9.271 mm
MX25L4006EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3	3/3.3	2	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		2MX2	2M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm	Not Qualified	SPI	4194304 bit	2.7 V		e3			NOR TYPE	.00001 Amp	4.9 mm	2.7
IS25WP128-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE					1.27 mm	105 Cel		128MX1	128M	-40 Cel	Matte Tin (Sn)	DUAL			S-PDSO-G8	1	1.95 V	2.16 mm		133 MHz	5.28 mm			134217728 bit	1.65 V		e3	10	260			5.28 mm	1.8
SST26WF016B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.