80 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58BW016DB8T3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M58BW016DT7T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80	1	3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK					NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M58BW032BB55T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	55 ns	3.3	NO
M58BW032DT60T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	60 ns	3.3	NO
M58BW032DB45ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	45 ns		NO
M58BW032BT55T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	55 ns	3.3	NO
M58LV064B150ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	2/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	2MX32	2M	0 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW128B150ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	4MX32	4M	0 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	150 ns	3	NO
M58LV064B150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	2/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	2MX32	2M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LV064B150ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	2/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	2MX32	2M	0 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW128B150ZA1E	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	4MX32	4M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW128B150ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	4MX32	4M	0 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	150 ns	3	NO
M58LW064B150T1	STMicroelectronics	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	1.8/3.6,3/3.3	32	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	70 Cel	2MX32	2M	0 Cel	64	YES	TIN LEAD	YES	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	2/4	e0			NOR TYPE	.000001 Amp	20 mm	YES	150 ns	3	NO
M58LW064B150ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	2MX32	2M	0 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW064B150T6	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	1.8/3.6,3/3.3	32	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	85 Cel	2MX32	2M	-40 Cel	64	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	YES	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	2/4	e4			NOR TYPE	.000001 Amp	20 mm	YES	150 ns	3	NO
M58LW128B150ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	4MX32	4M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW128B150ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	4MX32	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	150 ns	3	NO
M58LW064B120ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	2MX32	2M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		120 ns	3
M58LSW32B120ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	512K	50 mA	1048576 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE		e1			NOR TYPE	.000001 Amp	13 mm	YES	120 ns	3	NO
M58LW064B150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	2MX32	2M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW128B150ZA1F	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	4MX32	4M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LSW32B120ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	512K	50 mA	1048576 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	1MX32	1M	0 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE		e1			NOR TYPE	.000001 Amp	13 mm	YES	120 ns	3	NO
M58LSW32B150ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	1MX32	1M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LSW32B120ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	512K	50 mA	1048576 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE		e1			NOR TYPE	.000001 Amp	13 mm	YES	120 ns	3	NO
M58LW064B120ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	2MX32	2M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		120 ns	3
M58LW064A150T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	FLATPACK				.8 mm	85 Cel	4MX16	4M	-40 Cel					QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		20 mm		150 ns	3
M58LSW32B150ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	1MX32	1M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LSW32B150ZA1	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	1MX32	1M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW064A150T1	STMicroelectronics	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	FLATPACK				.8 mm	70 Cel	4MX16	4M	0 Cel					QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		20 mm		150 ns	3
M58LW064B150T1T	STMicroelectronics	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	1.8/3.6,3/3.3	32	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	70 Cel	2MX32	2M	0 Cel	64	YES	TIN LEAD	YES	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	2/4	e0			NOR TYPE	.000001 Amp	20 mm	YES	150 ns	3	NO
M58LW064A150T6	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	FLATPACK				.8 mm	85 Cel	4MX16	4M	-40 Cel					QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		20 mm		150 ns	3
M58LSW32B120ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	512K	50 mA	1048576 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	1MX32	1M	0 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE		e1			NOR TYPE	.000001 Amp	13 mm	YES	120 ns	3	NO
M58LW064B150T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	1.8/3.6,3/3.3	32	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	85 Cel	2MX32	2M	-40 Cel	64	YES	TIN LEAD	YES	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	2/4	e0			NOR TYPE	.000001 Amp	20 mm	YES	150 ns	3	NO
M58LW128B150ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	4MX32	4M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW064B120ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	2MX32	2M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		120 ns	3
M58LW064B150ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	70 Cel	2MX32	2M	0 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LSW32B150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	85 Cel	1MX32	1M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		150 ns	3
M58LW064B150ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	2MX32	2M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW064B120ZA1T	STMicroelectronics	FLASH	COMMERCIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	GRID ARRAY, THIN PROFILE		16		1 mm	70 Cel	2MX32	2M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V	SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		120 ns	3
M58LV064B150ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	1M	50 mA	2097152 words	3.3	NO	2/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	2MX32	2M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	2/4	e1			NOR TYPE	.000001 Amp	13 mm	YES	150 ns	3	NO
M58LW064A150T1T	STMicroelectronics	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	FLATPACK				.8 mm	70 Cel	4MX16	4M	0 Cel					QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		20 mm		150 ns	3
M58LW128B150ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	NO	2/3.3,3/3.3	32	GRID ARRAY, THIN PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel	4MX32	4M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	150 ns	3	NO
S29CD016J0MBAM022	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	9 mm	Not Qualified	TOP	16777216 bit	2.5 V			e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J0PFFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm	11 mm	Not Qualified	TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD032G0MQAN000	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		2K,16K	90 mA	1048576 words		YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD	R-PQFP-G80	3				Not Qualified	TOP	33554432 bit				e0		260	NOR TYPE	.00006 Amp		YES	64 ns		YES
S29CL032J0RFAI112	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm	11 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE		13 mm		48 ns	3.3
S29CD032J0PQAI122	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK				.8 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	2.75 V	3.35 mm	14 mm	Not Qualified	TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		20 mm		54 ns	2.7
S29CD016J0JQFI010	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	2.75 V	3.35 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.