80 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58BW016DB70ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW016FB70T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M58BW016BB100ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016BB90ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M58BW016DB80T6F	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M58BW016BB80T6F	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M58BW016BB90T6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M58BW016BT90T3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M58BW032DT55T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	55 ns	3.3	NO
M58BW016BT80ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016BT90T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M58BW016DB90T6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M58BW016BBXXT3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			32	FLATPACK			.8 mm	125 Cel	512KX32	512K	-40 Cel				QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		20 mm		80 ns	3
M58BW032DB55ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M58BW016BB100T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M58BW032DT60ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	12 mm	YES	60 ns	3.3	NO
M58BW016DT100ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DT7ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80	1	3.6 V	1.6 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK					NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW032BT55ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW016BT90ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M58BW032DT60ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW016DT70ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BF008100D3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5			32	FLATPACK			.8 mm	125 Cel	256KX32	256K	-40 Cel				QUAD	R-PQFP-G80		5.5 V	3.4 mm	14 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		20 mm		20 ns	5
M58BW16FT5ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	2K,16K	50 mA	1048576 words	2.7	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80		3.3 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	2.5 V						NOR TYPE	.00015 Amp	12 mm	YES	55 ns	3.3	NO
M58BW016DT80ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW16FT5ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	2K,16K	50 mA	1048576 words	2.7	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80		3.3 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	2.5 V						NOR TYPE	.00015 Amp	12 mm	YES	55 ns	3.3	NO
M58BW016DT7T3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M58BW032DB55ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW016BB100T6	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M58BW16FB5ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	50 mA	1048576 words	2.7	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80		3.3 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.5 V						NOR TYPE	.00015 Amp	12 mm	YES	55 ns	3.3	NO
M58BW032BB60ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW016BB90T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M58BW016BB80ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016DB90T3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO
M58BW032BT45T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	1MX32	1M	-40 Cel	4,8,62	YES		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	45 ns	3.3	NO
M58BW032BB55ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	12 mm	YES	55 ns	3.3	NO
M58BW016DT80T6	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M58BW016BT90ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M58BW016BT100T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M58BW016DB100ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DB8T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		QUAD	R-PQFP-G80	1	3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M58BW032BT55T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	1MX32	1M	-40 Cel	4,8,62	YES		QUAD	R-PQFP-G80					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW016BT100T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M58BW016BTXXT3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			32	FLATPACK			.8 mm	125 Cel	512KX32	512K	-40 Cel				QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		20 mm		80 ns	3
M58BW016DT100T6F	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M58BW016BT100ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DT100ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DB100T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	8,31	YES	TIN LEAD	QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.