80 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CD032J0RBFM020	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	48 ns	2.7	YES
S29CD016J1MFAI133	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S29CD016J0PQFM10	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	BGA80,8X10,40	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	QUAD	R-PQFP-G80		2.75 V	3.35 mm	66 MHz	14 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL016J1JFFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL032J0JFFI00	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD016J0PFFM033	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL032J1JFAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD032J0JFFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY			1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	2.7
S29CL016J0JFAI00	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY			1 mm	85 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	3.3
S29CD016J0MBFI132	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm				16777216 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			11 mm		54 ns	2.7
S29CL032J0MBAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		BOTTOM	33554432 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J0JQFM000	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL032J1JFFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL016J1JFFI122	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified			16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1					13 mm		54 ns	3.3
S29CL016J1MQAI033	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK			.8 mm	85 Cel	512KX32	512K	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CD016J0MFAI123	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0PBFM123	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE			1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm				16777216 bit	2.5 V							11 mm		54 ns	2.7
S29CD032J0JFAI102	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S29CL016J0JFAI112	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CL016J0PBFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		TOP	16777216 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J1JFAI110	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S29WS064J0SBAI030	Infineon Technologies	FLASH	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified		BOTTOM/TOP	67108864 bit						NOR TYPE	.00005 Amp		YES	45 ns		YES
S29CD032J1MQFI120	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK			.8 mm	85 Cel	1MX32	1M	-40 Cel			MATTE TIN		QUAD	R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	2.7
S29CL032J0PQFI123	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK			.8 mm	85 Cel	1MX32	1M	-40 Cel			MATTE TIN		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3					20 mm		54 ns	3.3
S29CD016J0PQFI13	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	QUAD	R-PQFP-G80		2.75 V	3.35 mm	66 MHz	14 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J0MQAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK			.8 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CD016J1MQFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	FLATPACK			.8 mm	125 Cel	512KX32	512K	-40 Cel			MATTE TIN		QUAD	R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	2.5 V	TOP BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	2.7
S29CD016J1JFFI020	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J1JFFM032	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J1JFAM033	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL032J1MFAI120	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CL032J0JFAI01	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD016J0MQFM110	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	Matte Tin (Sn)	YES	QUAD	R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J0MBFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL032J1JFFI113	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S29CL016J1JBFM022	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		TOP	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J1JFAI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J0PFAI033	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J0JQFM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories	.8 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL032J0PFAI02	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm	66 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD016J0JFAM122	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J1JBAI122	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm				16777216 bit	2.5 V							11 mm		54 ns	2.7
S29CD032J0RBAI002	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	48 ns	2.7	YES
S29CD016J1MQFI020	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	FLATPACK			.8 mm	85 Cel	512KX32	512K	-40 Cel			MATTE TIN		QUAD	R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	2.7
S29CL016J1MFAI023	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CL016J0MFFM102	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	125 Cel	512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S29CL016J0MFAM100	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE			1 mm	125 Cel	512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CD032J0JBAM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.