80 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CD016J0MBAI133	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm				16777216 bit	2.5 V		e0					11 mm		54 ns	2.7
S29WS064J0PBAI033	Infineon Technologies	FLASH	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B80							Not Qualified		BOTTOM/TOP	67108864 bit						NOR TYPE	.00005 Amp		YES	55 ns		YES
S29CL032J0RQFM012	Infineon Technologies	FLASH		80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES		32	FLATPACK	QFP80,.7X.9,32		20	.8 mm	125 Cel	3-STATE	1MX32	1M	-40 Cel	16,62	YES		YES	QUAD	R-PQFP-G80		3.6 V	3.35 mm	1000000 Write/Erase Cycles	75 MHz	14 mm		.00006 ms	BOTTOM	33554432 bit	3 V					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CD016J1JBFM000	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J0PQFI01	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	QUAD	R-PQFP-G80		2.75 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J0RQFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD	R-PQFP-G80		3.6 V	3.35 mm		75 MHz	14 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						20 mm		54 ns	3.3
S29CL016J0JQAM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CL032J0RBFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	33554432 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	48 ns	2.7	YES
S29CD032J0JBFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified		TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J1JQFI02	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	QUAD	R-PQFP-G80		2.75 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD032J0MFFI103	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	2.7
S29CL032J0MFFI02	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		56 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD032J1JBAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J0PFAM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J1MQAI123	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK				.8 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CL016J0JQFI130	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK				.8 mm	85 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	3.3
S29CL032J0PQFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL016J0JQAM102	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CL032J0PBAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified		BOTTOM	33554432 bit	3 V		e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J1MFAI133	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CL016J0PFFI123	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1					13 mm		54 ns	3.3
S29CD016J0JBAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J1JFFM112	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S29CD032J0JFAM000	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J0JQFM010	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL016J0JFAI110	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CD016J1MQAM130	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD	R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	2.7
S29CL016J0PQAM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL016J1JBAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J0PFAI033	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0PQFM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J1JQFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CD032J0JQFM00	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD	R-PQFP-G80		2.75 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						20 mm		54 ns	2.7
S29CL032J0RFAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		48 ns	3.3
S29CL016J0MQFM020	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL032J0RQAI003	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	48 ns	3.3	YES
S29CD016J1MQFM033	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD	R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	TOP BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	2.7
S29CL016J0JFAM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD032J1MFAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			NOR TYPE		13 mm		54 ns	2.7
S29CD032J0MFFI023	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0MFAI113	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0PBFI000	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J1JBAI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified		TOP	33554432 bit	2.5 V		e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J1MFAM020	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		TOP	16777216 bit	2.5 V	TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S29CL016J1MQAM130	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3		FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD	R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL016J0MBFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32	Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified		BOTTOM	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J0RFAM02	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY				1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		75 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	2.7
S29CD016J0JQFM02	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32	Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	QUAD	R-PQFP-G80		2.75 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.