DIE Flash Memory 319

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
HB288800A6	Renesas Electronics	FLASH CARD	COMMERCIAL	68	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		838860800 words	3.3	8	UNCASED CHIP			1.27 mm	60 Cel		800MX8	800M	0 Cel		UPPER		R-XUUC-N68		3.45 V	5 mm			54 mm	Not Qualified		6710886400 bit	3.15 V	ALSO AVAILABLE 5V SUPPLY NOM				NOR TYPE		85.6 mm	250 ns	3.3
HB288384E5	Renesas Electronics	FLASH	COMMERCIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		402653184 words	3.3	8	UNCASED CHIP				60 Cel		384MX8	384M	0 Cel		UPPER		R-XUUC-N50		3.45 V	5 mm			36.4 mm	Not Qualified		3221225472 bit	3.15 V	ALSO AVAILABLE 5V NOM SUPPLY, ACTUAL SUB GROUP IS FL3.3 CAR				NOR TYPE		42.8 mm	250 ns	3.3
HB288448E5	Renesas Electronics	FLASH	COMMERCIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		469762048 words	3.3	8	UNCASED CHIP				60 Cel		448MX8	448M	0 Cel		UPPER		R-XUUC-N50		3.45 V	5 mm			36.4 mm	Not Qualified		3758096384 bit	3.15 V	ALSO AVAILABLE 5V NOM SUPPLY, ACTUAL SUB GROUP IS FL3.3 CAR				NOR TYPE		42.8 mm	250 ns	3.3
HB288448E6	Renesas Electronics	FLASH CARD	COMMERCIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		469762048 words	3.3	8	UNCASED CHIP				60 Cel		448MX8	448M	0 Cel		UPPER		R-XUUC-N50		3.45 V	5 mm			36.4 mm	Not Qualified		3758096384 bit	3.15 V	ALSO AVAILABLE 5V SUPPLY NOM				NOR TYPE		42.8 mm	250 ns	3.3
AT25SF161B-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	1			20		85 Cel	3-STATE	16MX1	16M	-40 Cel		UNSPECIFIED	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	108 MHz			SPI	16777216 bit	2.7 V					NOR TYPE	.00003 Amp			3
AT25SL641-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	27 mA	8388608 words	1.8	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	8MX8	8M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		2 V		100000 Write/Erase Cycles	133 MHz			SPI	67108864 bit	1.7 V					NOR TYPE	.00005 Amp			1.8
AT25XE081D-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3	4	UNCASED CHIP		20		85 Cel	3-STATE	2MX4	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	8388608 bit	2.7 V					NOR TYPE	.00005 Amp			3.3
AT25XE041D-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3	2	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	2MX2	2M	-40 Cel		UPPER	HARDWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	4194304 bit	2.7 V	ALSO OPERATES WITH 1.65V MIN @108MHZ FREQ				NOR TYPE	.000019 Amp			3.3
AT25XE161D-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	2MX8	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	108 MHz			SPI	16777216 bit	1.65 V					NOR TYPE	.00005 Amp			1.8
AT45DB021E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8	1	UNCASED CHIP				85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	UPPER		X-XUUC-N	1	3.6 V			70 MHz				2097152 bit	1.65 V		e4							2.7
AT25DN011-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3	1	UNCASED CHIP				85 Cel		1MX1	1M	-40 Cel		UPPER		X-XUUC-N		3.6 V			104 MHz				1048576 bit	2.3 V									3
AT45DB161E-DWF	Renesas Electronics	FLASH	INDUSTRIAL	12	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3	1	UNCASED CHIP				85 Cel		16MX1	16M	-40 Cel		UPPER		R-XUUC-N12		3.6 V			104 MHz	2.05 mm			16777216 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			3.23 mm		2.7
AT25DF021A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8	1	UNCASED CHIP				85 Cel		2MX1	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	UPPER		X-XUUC-N		3.6 V			104 MHz				2097152 bit	1.65 V	IT ALSO OPERATES AT 2.3V MIN	e4			NOR TYPE				1.8
AT25QL641-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8	1	UNCASED CHIP				85 Cel		64MX1	64M	-40 Cel		UPPER		X-XUUC-N		2 V			104 MHz				67108864 bit	1.7 V									1.8
AT25DF041B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8	1	UNCASED CHIP				85 Cel		4MX1	4M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	UPPER		X-XUUC-N		3.6 V			104 MHz				4194304 bit	1.65 V		e4			NOR TYPE				1.8
AT45DB041E-DWFHT	Renesas Electronics	FLASH	AUTOMOTIVE	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8	1	UNCASED CHIP				125 Cel		4MX1	4M	-40 Cel		UPPER		R-XUUC-N8		3.6 V			85 MHz	1.418 mm			4194304 bit	1.65 V							2.518 mm		2.7
AT45DB321E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V			85 MHz				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED					3
AT25DF021A-DWFHT	Renesas Electronics	FLASH	AUTOMOTIVE		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8	1	UNCASED CHIP				125 Cel		2MX1	2M	-40 Cel		UPPER		X-XUUC-N	1	3.6 V			85 MHz				2097152 bit	1.7 V					NOR TYPE				1.8
AT25SF081B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	1MX8	1M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	108 MHz			SPI	8388608 bit	2.5 V					NOR TYPE	.00003 Amp			3
AT25XE041B-DRDA	Renesas Electronics	FLASH	INDUSTRIAL	11	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		4194304 words		1	UNCASED CHIP				85 Cel		4MX1	4M	-40 Cel		UPPER		R-XUUC-N11		3.6 V				1.54 mm			4194304 bit	1.65 V							1.596 mm		1.8
AT45DB641E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3	1	UNCASED CHIP				85 Cel		64MX1	64M	-40 Cel		UPPER		X-XUUC-N		3.6 V			85 MHz				67108864 bit	2.3 V	IT ALSO OPERATES AT FREQUENCY 50 MHZ AT 1.7 TO 3.6 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED					1.8
AT25SF641-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8	1	UNCASED CHIP				85 Cel		64MX1	64M	-40 Cel		UPPER		X-XUUC-N		1.95 V			104 MHz				67108864 bit	1.65 V									2.7
AT25FF161A-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	2MX8	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	16777216 bit	1.65 V					NOR TYPE	.00005 Amp			1.8
AT25DF011-DWFHT	Renesas Electronics	FLASH	AUTOMOTIVE		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words		1	UNCASED CHIP				125 Cel		1MX1	1M	-40 Cel		UPPER		X-XUUC-N	1	3.6 V		20000 Write/Erase Cycles	104 MHz				1048576 bit	1.7 V						.00006 Amp			1.8
AT25DF512C-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	18 mA	65536 words	3	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	64KX8	64K	-40 Cel		UPPER	HARDWARE/SOFTWARE	R-XUUC-N		3.6 V		100000 Write/Erase Cycles	104 MHz			SPI	524288 bit	2.3 V					NOR TYPE	.000015 Amp			3
AT25SF641B-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	19 mA	67108864 words	3	1	UNCASED CHIP		20		85 Cel	3-STATE	64MX1	64M	-40 Cel		UNSPECIFIED	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	104 MHz			SPI	67108864 bit	2.7 V					NOR TYPE	.000025 Amp			3
AT25QL128A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8	1	UNCASED CHIP				85 Cel		128MX1	128M	-40 Cel		UPPER		X-XUUC-N		2 V			104 MHz				134217728 bit	1.7 V									1.8
AT45DB321F-DWF	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V			104 MHz				33554432 bit	1.65 V
AT45DB322F-DWF	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V			104 MHz				33554432 bit	1.65 V
AT25SL321-DWF	Renesas Electronics	FLASH	INDUSTRIAL	11	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		R-XUUC-N11		2 V			104 MHz	1.596 mm			33554432 bit	1.7 V							2.329 mm		1.8
AT25FF041A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8	2	UNCASED CHIP		20		85 Cel	3-STATE	2MX2	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	4194304 bit	1.65 V					NOR TYPE	.00005 Amp			1.8
AT25QL321-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8	1	UNCASED CHIP				85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		2 V			104 MHz				33554432 bit	1.7 V									1.8
AT25SF321B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	108 MHz			SPI	33554432 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp			3
AT25QF641B-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		SERIAL	SYNCHRONOUS	19 mA	4194304 words	3	16	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	4MX16	4M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	104 MHz			SPI	67108864 bit	2.7 V					NOR TYPE	.000025 Amp			3
AT45DB041E-DWF	Renesas Electronics	FLASH			DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1			20			3-STATE	4MX1	4M				HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	85 MHz			SPI	4194304 bit	2.3 V					NOR TYPE	.00004 Amp			3
AT45DB081E-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	8	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	1MX8	1M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE				NOR TYPE	.00004 Amp			3
AT25XE041B-DRDAHT	Renesas Electronics	FLASH	AUTOMOTIVE	11	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		4194304 words		1	UNCASED CHIP				125 Cel		4MX1	4M	-40 Cel		UPPER		R-XUUC-N11		3.6 V				1.54 mm			4194304 bit	1.65 V							1.596 mm		1.8
AT25DF011-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	1.8	1	UNCASED CHIP				85 Cel		1MX1	1M	-40 Cel	Matte Tin (Sn)	UPPER		X-XUUC-N		3.6 V			104 MHz				1048576 bit	1.7 V		e3			NOR TYPE				1.8
AT25FF321A-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE		UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3	16	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	2MX16	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY				NOR TYPE	.00005 Amp			3.3
AT25SF321-DWF	Renesas Electronics	FLASH		8	DIE	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	8	UNCASED CHIP	UNCASED CHIP	20		85 Cel	3-STATE	4MX8	4M	-40 Cel		UPPER	HARDWARE/SOFTWARE	R-XUUC-N		3.6 V		100000 Write/Erase Cycles	85 MHz			SPI	33554432 bit	2.5 V					NOR TYPE	.000025 Amp			3
AT25SF041-DWF	Renesas Electronics	FLASH			DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1	UNCASED CHIP	DIE OR CHIP	20		85 Cel	3-STATE	4MX1	4M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		3.6 V			104 MHz			SPI	4194304 bit	2.5 V					NOR TYPE	.000025 Amp			3
MZ-76P256B/KR	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		274877906944 words		8	UNCASED CHIP				70 Cel		256GX8	256G	0 Cel		UPPER		R-XUUC-N									2199023255552 bit						MLC NAND TYPE
MZ-76P2T0B/CN	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		2199023255552 words		8	UNCASED CHIP				70 Cel		2TX8	2T	0 Cel		UPPER		R-XUUC-N									17592186044416 bit						MLC NAND TYPE
MZ-76P512B/CN	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		549755813888 words		8	UNCASED CHIP				70 Cel		512GX8	512G	0 Cel		UPPER		R-XUUC-N									4398046511104 bit						MLC NAND TYPE
MZ-76P2T0B/EU	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		2199023255552 words		8	UNCASED CHIP				70 Cel		2TX8	2T	0 Cel		UPPER		R-XUUC-N									17592186044416 bit						MLC NAND TYPE
MZ-76P4T0B/KR	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		3298534883328 words		8	UNCASED CHIP				70 Cel		4TX8	4T	0 Cel		UPPER		R-XUUC-N									26388279066624 bit						MLC NAND TYPE
MZ-76P4T0B/EU	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		3298534883328 words		8	UNCASED CHIP				70 Cel		4TX8	4T	0 Cel		UPPER		R-XUUC-N									26388279066624 bit						MLC NAND TYPE
MZ-76P256B/EU	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		274877906944 words		8	UNCASED CHIP				70 Cel		256GX8	256G	0 Cel		UPPER		R-XUUC-N									2199023255552 bit						MLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.