DIE Flash Memory 319

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Endurance	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Type	Maximum Standby Current	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND01GR3A2B	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	UNCASED CHIP						128MX8	128M					UPPER	X-XUUC-N	1.95 V		Not Qualified		1073741824 bit	1.7 V			SLC NAND TYPE			35 ns	1.8
NAND01GR3A2A	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	UNCASED CHIP						128MX8	128M					UPPER	X-XUUC-N	1.95 V		Not Qualified		1073741824 bit	1.7 V			SLC NAND TYPE			35 ns	1.8
NAND01GR4A2B	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	UNCASED CHIP						64MX16	64M					UPPER	X-XUUC-N	1.95 V		Not Qualified		1073741824 bit	1.7 V			SLC NAND TYPE			35 ns	1.8
NAND01GW3A2B	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	UNCASED CHIP						128MX8	128M					UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			35 ns	3
NAND01GW3A2BE06	STMicroelectronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K	20 mA	134217728 words	3	NO	3/3.3	8	UNCASED CHIP	DIE OR CHIP		Flash Memories		85 Cel	128MX8	128M	-40 Cel	8K	YES	YES	UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V		512	SLC NAND TYPE	.0001 Amp		15000 ns	3	NO
NAND01GW4A2C	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	UNCASED CHIP						64MX16	64M					UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			35 ns	3
NAND01GW3A2A	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	UNCASED CHIP						128MX8	128M					UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			35 ns	3
NAND01GW4A2A	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	UNCASED CHIP						64MX16	64M					UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			35 ns	3
NAND01GW3A2C	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	UNCASED CHIP						128MX8	128M					UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			35 ns	3
NAND01GR3A2C	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	UNCASED CHIP						128MX8	128M					UPPER	X-XUUC-N	1.95 V		Not Qualified		1073741824 bit	1.7 V			SLC NAND TYPE			35 ns	1.8
NAND01GW4A2BKGD	STMicroelectronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	UNCASED CHIP					85 Cel	64MX16	64M	-40 Cel				UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			15000 ns	3
NAND01GW4A2B	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	UNCASED CHIP						64MX16	64M					UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			35 ns	3
NAND01GW4A2BE06	STMicroelectronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	8K	20 mA	67108864 words	3	NO	3.3	16	UNCASED CHIP	DIE OR CHIP		Flash Memories		85 Cel	64MX16	64M	-40 Cel	8K	YES	YES	UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V		256	SLC NAND TYPE	.0001 Amp		15000 ns	3	NO
NAND01GR4A2C	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	UNCASED CHIP						64MX16	64M					UPPER	X-XUUC-N	1.95 V		Not Qualified		1073741824 bit	1.7 V			SLC NAND TYPE			35 ns	1.8
NAND01GW3A2BKGD	STMicroelectronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	UNCASED CHIP					85 Cel	128MX8	128M	-40 Cel				UPPER	X-XUUC-N	3.6 V		Not Qualified		1073741824 bit	2.7 V			SLC NAND TYPE			15000 ns	3
NAND01GR4A2A	STMicroelectronics	FLASH			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	UNCASED CHIP						64MX16	64M					UPPER	X-XUUC-N	1.95 V		Not Qualified		1073741824 bit	1.7 V			SLC NAND TYPE			35 ns	1.8
S29GL128P11WGI014	Infineon Technologies	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	UNCASED CHIP					85 Cel	8MX16	8M	-40 Cel				UPPER	X-XUUC-N	3.6 V		Not Qualified		134217728 bit	2.7 V			NOR TYPE			110 ns	3
S29CL016J1JDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29CD016J1JDGH137	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CL016J0MDGH014	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29CD016J0MDGH137	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CD016J0JDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CL016J0JDGH014	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29CD016J0JDGH034	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CL016J1MDGH034	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			64 ns	3.3
S29CL016J1JDGH034	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29CL016J0MDGH034	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29GL128P11DEI014	Infineon Technologies	FLASH	INDUSTRIAL	62	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	UNCASED CHIP					85 Cel	128MX1	128M	-40 Cel				UPPER	R-XUUC-N62	3.6 V		Not Qualified		134217728 bit	2.7 V			NOR TYPE			110 ns	3
S29CD016J0MDGH117	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CD016J1JDGH034	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CL016J1MDGH017	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			64 ns	3.3
S29CL016J0JDGH034	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29CD016J0JDGH134	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CD016J1MDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			64 ns	2.7
S29CL016J1JDGH014	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29CD016J1JDGH114	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29GL128P11DEI017	Infineon Technologies	FLASH	INDUSTRIAL	62	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	UNCASED CHIP					85 Cel	128MX1	128M	-40 Cel				UPPER	R-XUUC-N62	3.6 V		Not Qualified		134217728 bit	2.7 V			NOR TYPE			110 ns	3
S29CD016J0MDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CD016J0JDGH017	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CD016J1JDGH117	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29CL016J0JDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	3.6 V		Not Qualified	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	3.3
S29GL064S90SEI039	Infineon Technologies	FLASH	INDUSTRIAL	57	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	32K		4194304 words	3	YES		16		DIE OR CHIP	8		20	85 Cel	4MX16	4M	-40 Cel	128	NO	YES	UPPER	R-XUUC-N57	3.6 V	100000 Write/Erase Cycles		TOP	67108864 bit	2.7 V		8	NAND TYPE		YES	90 ns	3	YES
S29CD016J1JDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S29GL064S90SEI049	Infineon Technologies	FLASH	INDUSTRIAL	57	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	32K		4194304 words	3	YES		16		DIE OR CHIP	8		20	85 Cel	4MX16	4M	-40 Cel	128	NO	YES	UPPER	R-XUUC-N57	3.6 V	100000 Write/Erase Cycles		BOTTOM	67108864 bit	2.7 V		8	NAND TYPE		YES	90 ns	3	YES
S99-50214-01	Infineon Technologies	FLASH	OTHER	62	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	UNCASED CHIP					85 Cel	32MX16	32M	-25 Cel				UPPER	R-XUUC-N62				BOTTOM/TOP	536870912 bit				NOR TYPE			80 ns	1.8
S29CD016J0MDGH134	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			54 ns	2.7
S99-50214	Infineon Technologies	FLASH	OTHER	62	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	UNCASED CHIP					85 Cel	32MX16	32M	-25 Cel				UPPER	R-XUUC-N62				BOTTOM/TOP	536870912 bit				NOR TYPE			80 ns	1.8
S29CD016J1MDGH134	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	UNCASED CHIP					145 Cel	512KX32	512K	-40 Cel				UPPER	R-XUUC-N74	2.75 V		Not Qualified	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		NOR TYPE			64 ns	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.