DIP Flash Memory 1,202

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F512-15C3NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F210-12C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	120 ns	12	NO
TMS28F512A-10C3NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
TMS28F512A-17C4NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F040-15C2NE	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		512KX8	512K	-40 Cel	16	YES	DUAL	R-PDIP-T32			100 Write/Erase Cycles		Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		150 ns		YES
TMS28F210-17C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	125 Cel		64KX16	64K	-40 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	170 ns	12	NO
TMS28F512-17C2NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F512-17C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F512A-12C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F010-17C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F512A-12C3NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F010-17C4NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F512A-17C3NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F512-17C2NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F210-15C4NL	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	150 ns	12	NO
TMS28F010A-15C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE			2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES				NOR TYPE		41.4 mm	150 ns	12
TMS28F210-12C2NE4	Texas Instruments	FLASH	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	85 Cel		64KX16	64K	-40 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	120 ns	12	NO
TMS28F512A-12C4NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F512-12C4NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F210-10C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	125 Cel		64KX16	64K	-40 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	100 ns	12	NO
TMS28F512-15C3NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS29F512-100NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE			2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel			DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified	524288 bit	4.75 V					NOR TYPE		41.4 mm	100 ns	5
TMS28F512A-15C4NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F040-17C2NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		512KX8	512K	0 Cel	16	YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	YES
TMS29F258-300NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	DUAL	R-PDIP-T28	5.25 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	300 ns	5	YES
TMS28F210-12C4NQ	Texas Instruments	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	120 ns	12	NO
TMS28F512-12C2NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F010-10C3NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
TMS28F512A-17C4NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F512A-15C3NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F010-15C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F512A-10C4NE	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
TMS28F010-15C3NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F210-17C3NQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES	DUAL	R-PDIP-T40	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	170 ns	12	NO
TMS28F010-12C3NE	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F040-12C4NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		512KX8	512K	-40 Cel	16	YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	YES
TMS28F512A-15C3NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F040-15C2NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		512KX8	512K	-40 Cel	16	YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	YES
TMS28F010-10C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		128KX8	128K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
SMJ28F010B-15JDDM	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		128KX8	128K	-55 Cel		YES	DUAL	R-CDIP-T32	5.5 V	4.57 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE				NOR TYPE	.0001 Amp	40.64 mm	150 ns	12	NO
TMS28F010A-15C3NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE			2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel			DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		41.4 mm	150 ns	12
TMS28F512-15C4NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F040-17C4NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		512KX8	512K	0 Cel	16	YES	DUAL	R-PDIP-T32			10000 Write/Erase Cycles			4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		170 ns		YES
TMS28F512-10C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
TMS28F512-17C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	125 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F040-10C2NE4	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		512KX8	512K	-40 Cel	16	YES	DUAL	R-PDIP-T32			100 Write/Erase Cycles			4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		100 ns		YES
TMS28F040-12C3NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	70 Cel		512KX8	512K	0 Cel	16	YES	DUAL	R-PDIP-T32			1000 Write/Erase Cycles			4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		120 ns		YES
TMS28F512-10C2NE	Texas Instruments	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	2.54 mm	85 Cel		64KX8	64K	-40 Cel		YES	DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.