DIP Flash Memory 1,202
| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
1000 PROGRAM/ERASE CYCLES |
NOR TYPE |
41.4 mm |
100 ns |
12 |
|||||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
NO |
DUAL |
R-PDIP-T32 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.75 V |
64 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.003 Amp |
41.4 mm |
250 ns |
5 |
YES |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
10000 PROGRAM/ERASE CYCLES |
NOR TYPE |
41.4 mm |
170 ns |
12 |
|||||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
10000 Write/Erase Cycles |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
100 ns |
YES |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
150 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
1000 Write/Erase Cycles |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
100 ns |
YES |
||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
256K |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
2 |
NO |
DUAL |
R-PDIP-T32 |
Not Qualified |
524288 bit |
128 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
100 ns |
YES |
||||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
MILITARY |
32 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class Q |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
125 Cel |
128KX8 |
128K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
120 ns |
12 |
|||||||||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
100 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
100 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
1000 PROGRAM/ERASE CYCLES |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
170 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
150 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
100 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
100 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
150 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
170 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
1000 Write/Erase Cycles |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
170 ns |
YES |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
1000 PROGRAM/ERASE CYCLES |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
125 Cel |
64KX16 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
100 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
150 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
512KX8 |
512K |
-40 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
1000 Write/Erase Cycles |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
100 ns |
YES |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
150 ns |
12 |
NO |
|||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
100 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
170 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16K |
15 mA |
131072 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
8 |
YES |
DUAL |
R-PDIP-T32 |
5.25 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.001 Amp |
41.4 mm |
100 ns |
5 |
YES |
|||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
125 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
100 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
120 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
100 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
100 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
10000 PROGRAM/ERASE CYCLES |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
512KX8 |
512K |
-40 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
1000 Write/Erase Cycles |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
170 ns |
YES |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
64KX8 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
170 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
10000 Write/Erase Cycles |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
120 ns |
YES |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
256K |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
2 |
NO |
DUAL |
R-PDIP-T32 |
Not Qualified |
524288 bit |
128 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
150 ns |
YES |
||||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
125 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
150 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
170 ns |
12 |
YES |
|||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16K |
15 mA |
131072 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
8 |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.001 Amp |
41.4 mm |
120 ns |
5 |
YES |
|||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
64KX8 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
150 ns |
12 |
YES |
|||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
128KX8 |
128K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
100 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
150 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
64KX8 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
150 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
120 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
NO |
5 |
16 |
IN-LINE |
DIP40,.6 |
Flash Memories |
2.54 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
YES |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
100 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
BULK ERASE |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
52.455 mm |
170 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
256K |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
2 |
NO |
DUAL |
R-PDIP-T32 |
Not Qualified |
524288 bit |
128 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
150 ns |
YES |
||||||||||||||||||||||||||||||||
|
|
Texas Instruments |
FLASH |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
||||||||||||||||||||||
|
Texas Instruments |
FLASH |
AUTOMOTIVE |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
32K |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
125 Cel |
512KX8 |
512K |
-40 Cel |
16 |
YES |
DUAL |
R-PDIP-T32 |
1000 Write/Erase Cycles |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
150 ns |
YES |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
MILITARY |
32 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
125 Cel |
128KX8 |
128K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
120 ns |
12 |
||||||||||||||||||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
170 ns |
12 |
NO |
|||||||||||||||||||||||
|
Texas Instruments |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
YES |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
1000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
1000 PROGRAM/ERASE CYCLES |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
41.4 mm |
120 ns |
12 |
NO |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.