DIP Flash Memory 1,202

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39SF010A-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	MATTE TIN	DUAL	1		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e3			NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
SST39SF040-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN	DUAL	1		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V			e3			NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
SST25VF080B-50-4C-PAE	Microchip Technology	FLASH	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	IN-LINE	DIP8,.3	Flash Memories	100	2.54 mm	70 Cel	3-STATE	8MX1	8M	0 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.334 mm	100000 Write/Erase Cycles	50 MHz	7.62 mm	Not Qualified		SPI		8388608 bit	2.7 V			e3			NOR TYPE	.00003 Amp	9.271 mm
SST39SF020A-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	64	YES	Matte Tin (Sn)	DUAL	1		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				2097152 bit	4.5 V			e3			NOR TYPE	.0001 Amp	41.91 mm	70 ns	5	YES
AM29F010B-90PI	Spansion	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD	DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	42.037 mm	90 ns	5	YES
W25Q128FVAIG	Winbond Electronics	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	IN-LINE	DIP8,.3	Flash Memories	20	2.54 mm	85 Cel		128MX1	128M	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.33 mm	100000 Write/Erase Cycles	104 MHz	7.62 mm	Not Qualified		SPI		134217728 bit	2.7 V						NOR TYPE	.00002 Amp	9.27 mm		3
AM29F010B-90PC	Spansion	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD	DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	42.037 mm	90 ns	5	YES
CAT28F512L-12	Catalyst Semiconductor	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm	120 ns	12	NO
CAT28F512L12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm	120 ns	12	NO
AM29F040B-120PE	Spansion	FLASH	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-55 Cel	8	YES	TIN LEAD	DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	42.037 mm	120 ns	5	YES
AM29F040B-120PEB	Spansion	FLASH	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE			20	2.54 mm	125 Cel		512KX8	512K	-55 Cel			TIN LEAD	DUAL			R-PDIP-T32		5.5 V	5.715 mm			15.24 mm	Not Qualified				4194304 bit	4.5 V	1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS		e0			NOR TYPE		42.037 mm	120 ns	5
CAT28F512LI-12	Catalyst Semiconductor	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm	120 ns	12	NO
CAT28F512LI12	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3		260	NOR TYPE	.00001 Amp	42.03 mm	120 ns	12	NO
A29040B-70F	Amic Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		512KX8	512K	0 Cel	8	YES		DUAL			R-PDIP-T32		5.5 V	5.334 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	41.91 mm	70 ns	5	YES
AM29F040B-90PF	Spansion	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN	DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	42.037 mm	90 ns	5	YES
AM29F040B-90PD	Spansion	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		512KX8	512K	0 Cel	8	YES	MATTE TIN	DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	42.037 mm	90 ns	5	YES
AT29C010A-70PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD	DUAL			R-PDIP-T32		5.25 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.75 V			e0			NOR TYPE	.0003 Amp	42.037 mm	70 ns	5	YES
CAT28F512P-12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e0			NOR TYPE	.00001 Amp	42.03 mm	120 ns	12	NO
AT29C010A-15PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm	150 ns	5	YES
CAT28F512P-90	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e0			NOR TYPE	.00001 Amp	42.03 mm	90 ns	12	NO
M28F512-12B1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	MATTE TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES		e3			NOR TYPE	.0001 Amp	41.91 mm	12 ns	12	NO
ACT-F512K8N-070P4Q	Cobham Plc	FLASH MODULE	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	Flash Memories		2.54 mm	125 Cel		512KX8	512K	-55 Cel	8	YES		DUAL			R-CDMA-T32		5.5 V		100000 Write/Erase Cycles			Not Qualified				4194304 bit	4.5 V	100K ERASE/PROGRAM CYCLES					NOR TYPE	.0016 Amp		70 ns	5	YES
AT29C010A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0003 Amp	42.037 mm	120 ns	5	YES
CAT28F001L-12T	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm	120 ns	12	NO
CAT28F001LI-12T	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES	TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm	120 ns	12	NO
M28F512-15XB1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD	DUAL			R-PDIP-T32		5.25 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.75 V			e0			NOR TYPE	.0001 Amp	41.91 mm	15 ns	12	NO
AT29C256-12PI	Atmel	FLASH	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD	DUAL			R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified	10 ms			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0			NOR TYPE	.0003 Amp	36.95 mm	120 ns	5	YES
CAT28F001L-90B	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN	DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm	90 ns	12	NO
AT29C040A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	2K	NO	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0003 Amp	42.037 mm	120 ns	5	YES
TP28F010-120	Intel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
AT29C040A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0001 Amp	42.037 mm	120 ns	5	YES
P28F001BX-B120	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm	120 ns	12	NO
AM29F010B-55PI	Spansion	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD	DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	42.037 mm	55 ns	5	YES
AT29C010-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	128	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	5.59 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm	120 ns	5	YES
AT29C010A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm	120 ns	5	YES
AT49F002NT-90PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD	DUAL			R-PDIP-T32	1	5.5 V	5.59 mm			15.24 mm	Not Qualified			TOP	2097152 bit	4.5 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm	90 ns	5	YES
LH28F160BJD-TTL80	Sharp Corporation	FLASH	OTHER	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		4K,32K	60 mA	1048576 words	3.3	NO	3.3	16	IN-LINE	DIP42,.6	Flash Memories		2.54 mm	85 Cel		1MX16	1M	0 Cel	8,31	YES		DUAL			R-PDIP-T42							Not Qualified			TOP	16777216 bit							NOR TYPE	.00003 Amp		80 ns		NO
P28F001BX-T150	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm	150 ns	12	NO
TP28F512-120	Intel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL			R-PDIP-T32		5.5 V	4.83 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.91 mm	120 ns	12	NO
TMS28F010A-12C3NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel				DUAL			R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES					NOR TYPE		41.4 mm	120 ns	12
TMS28F512-12C3NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		64KX8	64K	-40 Cel		YES		DUAL			R-PDIP-T32		5.5 V	5.08 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F210-17C3NL4	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES		DUAL			R-PDIP-T40		5.5 V	5.08 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	170 ns	12	NO
TMS28F210-10C3NL	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6	Flash Memories		2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES		DUAL			R-PDIP-T40		5.5 V	5.08 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	100 ns	12	NO
TMS28F512-15C4NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES		DUAL			R-PDIP-T32		5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F010-10C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		128KX8	128K	-40 Cel		YES		DUAL			R-PDIP-T32		5.5 V	5.08 mm	100 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
SMJ28F010B-20JDDM	Texas Instruments	FLASH	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		128KX8	128K	-55 Cel		YES		DUAL			R-CDIP-T32		5.5 V	4.57 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V	10000 PROGRAM/ ERASE CYCLE					NOR TYPE	.0001 Amp	40.64 mm	200 ns	12	NO
TMS28F010-12C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	125 Cel		128KX8	128K	-40 Cel		YES		DUAL			R-PDIP-T32		5.5 V	5.08 mm	100 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F010A-12C4NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel				DUAL			R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES					NOR TYPE		41.4 mm	120 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.