FBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Width	Qualification	Boot Block	Memory Density	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8D6316UTM-DC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	TOP	67108864 bit					NOR TYPE	.00003 Amp		YES	80 ns		YES
K8D6316UBM-FI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	67108864 bit					NOR TYPE	.00003 Amp		YES	90 ns		YES
K8P3315UQB-DE4B0	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM/TOP	33554432 bit	8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8D3216UBC-LC08T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	33554432 bit					NOR TYPE	.000018 Amp		YES	80 ns		YES
K8A6415EBC-FC7DT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88		8 mm	Not Qualified	BOTTOM	67108864 bit	8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8C1015ETM-FC1DT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	TOP	536870912 bit				240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8D6316UBM-LC07	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	67108864 bit					NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P6415UQB-DC4B	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM/TOP	67108864 bit	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	60 ns	2.7	YES
K8C5515EBM-DE1F0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K1216D0C-HIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	20 mA	33554432 words	2.65	NO	2.65	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63			Not Qualified		536870912 bit	256					.00005 Amp			45 ns		NO
K8C1015EBM-FE1D	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	BOTTOM	536870912 bit				240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8F1215EBM-FC1D	Samsung	FLASH	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64			Not Qualified	BOTTOM	536870912 bit					NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S2815EBC-SC7B	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	134217728 bit					NOR TYPE	.00005 Amp		YES	70 ns		YES
K8C1315EBM-DC1E	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	536870912 bit					NOR TYPE	.00002 Amp		YES	110 ns		YES
K8F5715ETM-FE1C	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88			Not Qualified	TOP	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5515EBM-DE1ET	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8P3215UQB-DC4CT	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	33554432 bit	8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K9K1G08U0A-JCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	30 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel	128MX8	128M	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63			Not Qualified		1073741824 bit	512					.0001 Amp			30 ns		NO
K8C1315EBM-FE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	BOTTOM	536870912 bit				240	NOR TYPE	.00002 Amp		YES	110 ns		YES
KFW8G16Q2M-DEB6S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K		536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	8K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		8589934592 bit	1K	e3			SLC NAND TYPE				76 ns		NO
K8F5615EBM-DC1DT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5715EBM-FE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815EBC-FE7C	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	134217728 bit					NOR TYPE	.00005 Amp		YES	70 ns		YES
K8C5515ETM-FC1F0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	TOP	268435456 bit				240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5715ETM-DC1D	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	TOP	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815EBC-FC7D0	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	134217728 bit					NOR TYPE	.00005 Amp		YES	70 ns		YES
KFW8G16Q2M-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K		536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	8K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		8589934592 bit	1K	e3			SLC NAND TYPE				76 ns		NO
K8A6415EBC-DC7B	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88		8 mm	Not Qualified	BOTTOM	67108864 bit	8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S5615EBA-DE7B0	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	8, 511	YES			BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00007 Amp		YES	88.5 ns		YES
K8F5615EBM-SE1C	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F5615EBM-SE1FT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5615ETM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	TOP	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5515ETM-DC1E0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	TOP	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815EBC-DC7ET	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	134217728 bit					NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P3215UQB-DE4DT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	33554432 bit	8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8C1215ETM-DE1DT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	TOP	536870912 bit					NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S6415ETB-DC7BT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	TOP	67108864 bit					NOR TYPE	.00005 Amp		YES	88.5 ns		YES
K8S5615ETA-FC7CT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	16MX16	16M	0 Cel	8,511	YES			BOTTOM	R-PBGA-B44			Not Qualified	TOP	268435456 bit					NOR TYPE	.00007 Amp		YES	70 ns		YES
K8C1115ETM-DE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	TOP	536870912 bit					NOR TYPE	.00002 Amp		YES	110 ns		YES
KFH4G16Q2M-DEB8S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3		Not Qualified		4294967296 bit	1K	e1		260	SLC NAND TYPE	.0001 Amp			76 ns		NO
K8D3216UTC-LC07T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	TOP	33554432 bit					NOR TYPE	.000018 Amp		YES	70 ns		YES
K8P3215UQB-DC4AT	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	33554432 bit	8			260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8F5715EBM-DC1CT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F5615EBM-SE1D	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815ETC-FE7D	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	TOP	134217728 bit					NOR TYPE	.00005 Amp		YES	70 ns		YES
K8S2815ETC-FC7C	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	TOP	134217728 bit					NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P6415UQB-DI4BT	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	67108864 bit	8	e1		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8F5615EBM-FE1E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88			Not Qualified	BOTTOM	268435456 bit					NOR TYPE	.00002 Amp		YES	100 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.