FBGA Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F8G08ABBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified			8589934592 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
SST38VF6401-90-5I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4	e1			NOR TYPE	.00003 Amp	8 mm	YES	90 ns	3	YES
SST39VF1601-70-4C-B3KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	TIN SILVER COPPER		BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
MT29F16G08ADBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		2GX8	2G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified			17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
SST39VF3201C-70-4I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
PF48F4400P0VBQEE	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM			R-PBGA-B88							Not Qualified		BOTTOM/TOP	536870912 bit							NOR TYPE	.00042 Amp		YES	100 ns		NO
PF48F4400P0VBQEF	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B88							Not Qualified		BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
PF48F4400P0VBQEK	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B88							Not Qualified		BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
MT29F4G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B63							Not Qualified			4294967296 bit			2K	e1	30	260	SLC NAND TYPE	.0001 Amp			25 ns		NO
MT29F4G01AAADDHC:D	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	70 Cel		512MX8	512M	0 Cel					BOTTOM		HARDWARE	R-PBGA-B63				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4294967296 bit							SLC NAND TYPE	.00005 Amp
MT29F16G08ADBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified			17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
SST39VF6401B-70-4C-B1KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE	.00002 Amp	10 mm	YES	70 ns	3	YES
MT29F4G01AAADDHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM		HARDWARE	R-PBGA-B63				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4294967296 bit					30	260	SLC NAND TYPE	.00005 Amp
MT29F2G08ABAEAH4-ITX:E	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	268435456 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified			2147483648 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns		NO
K9F1208U0B-JIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63	3						Not Qualified			536870912 bit			512					.00005 Amp			30 ns		NO
SST39VF3202C-70-4I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
M28W640FST70ZB1F	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM			R-PBGA-B47							Not Qualified		TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W800T-90WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.0001 Amp			90 ns		YES
M28W800T150GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM			R-PBGA-B45							Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	150 ns		NO
M29W400ZA-90M6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.00005 Amp			90 ns		YES
M28W640FST70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM			R-PBGA-B47							Not Qualified		TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W320ECT90ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM			R-PBGA-B47							Not Qualified		TOP	33554432 bit				e1			NOR TYPE	.000005 Amp		YES	90 ns		NO
M28W640FSU70ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	64	YES			BOTTOM			R-PBGA-B47							Not Qualified			67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W800B100GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM			R-PBGA-B45							Not Qualified		BOTTOM	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	100 ns		NO
M29W800T-90WA5	STMicroelectronics	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.0001 Amp			90 ns		YES
M28W640FST70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM			R-PBGA-B47							Not Qualified		TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W800B-150WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		BOTTOM	8388608 bit				e0			NOR TYPE	.0001 Amp			150 ns		YES
M29W640FB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	20 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM			R-PBGA-B48							Not Qualified		BOTTOM	67108864 bit			4/8				NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W320ECB85ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM			R-PBGA-B47							Not Qualified		BOTTOM	33554432 bit				e1			NOR TYPE	.000005 Amp		YES	85 ns		NO
M29W800B-120WA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		BOTTOM	8388608 bit				e0			NOR TYPE	.0001 Amp			120 ns		YES
M28W800B120GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM			R-PBGA-B45							Not Qualified		BOTTOM	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	120 ns		NO
M59DR032E120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH					.75 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM			R-PBGA-B48		2.2 V				7 mm	Not Qualified		TOP	33554432 bit	1.65 V						NOR TYPE		12 mm		120 ns	1.8
M29F800DB55ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM			R-PBGA-B48							Not Qualified		BOTTOM	8388608 bit				e1			NOR TYPE	.00015 Amp		YES	55 ns		YES
M28W640FSU70ZB1	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel		4MX16	4M	0 Cel	64	YES			BOTTOM			R-PBGA-B47							Not Qualified			67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W640FSB70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM			R-PBGA-B47							Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W320ECB70ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM			R-PBGA-B47							Not Qualified		BOTTOM	33554432 bit				e1			NOR TYPE	.000005 Amp		YES	70 ns		NO
M28W320ECB10ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM			R-PBGA-B47							Not Qualified		BOTTOM	33554432 bit				e1			NOR TYPE	.000005 Amp		YES	100 ns		NO
M29W800B-100WA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		BOTTOM	8388608 bit				e0			NOR TYPE	.0001 Amp			100 ns		YES
M28W640FSB70ZB1	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM			R-PBGA-B47							Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W800T120GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM			R-PBGA-B45							Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	120 ns		NO
M29W800B-100WA5	STMicroelectronics	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		BOTTOM	8388608 bit				e0			NOR TYPE	.0001 Amp			100 ns		YES
M28W640FST70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM			R-PBGA-B47							Not Qualified		TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W800T120GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM			R-PBGA-B45							Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	120 ns		NO
M59DR032C120ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM			R-PBGA-B48		2.2 V				7 mm	Not Qualified		TOP	33554432 bit	1.65 V						NOR TYPE		12 mm		120 ns	1.8
M28W160B150GJ1	STMicroelectronics	FLASH	COMMERCIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	TIN LEAD		BOTTOM			R-PBGA-B46							Not Qualified		BOTTOM	16777216 bit				e0			NOR TYPE	.000005 Amp		YES	150 ns		NO
M59DR032E100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM			R-PBGA-B48		2.2 V				7 mm	Not Qualified		TOP	33554432 bit	1.65 V						NOR TYPE		12 mm		100 ns	1.8
M29W640FB60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	20 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM			R-PBGA-B48							Not Qualified		BOTTOM	67108864 bit			4/8				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29W800T-120WA5	STMicroelectronics	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B48				100000 Write/Erase Cycles			Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.0001 Amp			120 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.