FBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W800B-150WA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.0001 Amp			150 ns		YES
M29W800B-100WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.0001 Amp			100 ns		YES
M28W160T100GJ6	STMicroelectronics	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	3/3.3,3.3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	TOP	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W640FSB70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B47				Not Qualified	BOTTOM	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W800T100GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M29W800T-120WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.0001 Amp			120 ns		YES
M28W800B150GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M29W800T-150WA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.0001 Amp			150 ns		YES
M59DR032C100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			NOR TYPE		12 mm		100 ns	1.8
M28W640FSB70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B47				Not Qualified	BOTTOM	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W160T100GJ1	STMicroelectronics	FLASH	COMMERCIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	3/3.3,3.3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	TOP	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M29W800B-90WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.0001 Amp			90 ns		YES
M28W160B120GJ6	STMicroelectronics	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	BOTTOM	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W800B120GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W160T150GJ6	STMicroelectronics	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	TOP	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M28W640FST70ZB1E	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B47				Not Qualified	TOP	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W160T120GJ1	STMicroelectronics	FLASH	COMMERCIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	TOP	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W640FSU70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	64	YES			BOTTOM	R-PBGA-B47				Not Qualified		67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W800B-90WA5	STMicroelectronics	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.0001 Amp			90 ns		YES
M29W800B-150WA5	STMicroelectronics	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.0001 Amp			150 ns		YES
M29F800DB90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	8388608 bit			e1	NOR TYPE	.00015 Amp		YES	70 ns		YES
M59DR032F100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			NOR TYPE		12 mm		100 ns	1.8
M29W800B-120WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.0001 Amp			120 ns		YES
M28W800B100GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	100 ns		NO
M29F800DT55ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	8388608 bit			e1	NOR TYPE	.00015 Amp		YES	55 ns		YES
M29W800T-150WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.0001 Amp			150 ns		YES
M29W400ZA-90M1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit			e0	NOR TYPE	.00005 Amp			90 ns		YES
M29F800DT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	8388608 bit			e1	NOR TYPE	.00015 Amp		YES	70 ns		YES
M28W160T150GJ1	STMicroelectronics	FLASH	COMMERCIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	TOP	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M29W800T-100WA5	STMicroelectronics	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.0001 Amp			100 ns		YES
M29F800DB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	8388608 bit			e1	NOR TYPE	.00015 Amp		YES	70 ns		YES
M28W800B150GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories	.75 mm	70 Cel	512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45				Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp		YES	150 ns		NO
M59DR032D120ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			NOR TYPE		12 mm		120 ns	1.8
M59DR032E120ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			NOR TYPE		12 mm		120 ns	1.8
M28W160B120GJ1	STMicroelectronics	FLASH	COMMERCIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46				Not Qualified	BOTTOM	16777216 bit			e0	NOR TYPE	.000005 Amp		YES	120 ns		NO
M28W320ECT85ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B47				Not Qualified	TOP	33554432 bit			e1	NOR TYPE	.000005 Amp		YES	85 ns		NO
M28W640FSU70ZB1F	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	70 Cel	4MX16	4M	0 Cel	64	YES			BOTTOM	R-PBGA-B47				Not Qualified		67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W320ECT70ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B47				Not Qualified	TOP	33554432 bit			e1	NOR TYPE	.000005 Amp		YES	70 ns		NO
M29W800T-100WA1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.0001 Amp			100 ns		YES
M28W640FSB70ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B47				Not Qualified	BOTTOM	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M28W640FSU70ZB1E	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	70 Cel	4MX16	4M	0 Cel	64	YES			BOTTOM	R-PBGA-B47				Not Qualified		67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W800T-100WA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.0001 Amp			100 ns		YES
M28W640FST70ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B47				Not Qualified	TOP	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M59DR032C120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			NOR TYPE		12 mm		120 ns	1.8
M59DR032E100ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	TOP	33554432 bit	1.65 V			NOR TYPE		12 mm		100 ns	1.8
M29W640FT70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	20 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	67108864 bit		4/8		NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W640FSB70ZB1E	STMicroelectronics	FLASH	COMMERCIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B47				Not Qualified	BOTTOM	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		NO
M59DR032F100ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH				.75 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48	2.2 V		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V			NOR TYPE		12 mm		100 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.