FBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Screening Level	Terminal Form	Parallel or Serial	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RD48F3000M0YTC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO		BOTTOM	R-PBGA-B107				Not Qualified	TOP	134217728 bit		16	NOR TYPE	.00003 Amp		YES	96 ns		NO
PH28F320W30TD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B56				Not Qualified	TOP	33554432 bit		4	NOR TYPE	.00005 Amp		YES	85 ns		NO
RD48F5000M0YFC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	256	NO		BOTTOM	R-PBGA-B107				Not Qualified	BOTTOM	536870912 bit			NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W320FT80ZASF	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	20 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	33554432 bit			NOR TYPE	.0001 Amp		YES	80 ns		YES
RD48F3000M0YCB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO		BOTTOM	R-PBGA-B105				Not Qualified	BOTTOM	134217728 bit			NOR TYPE	.00003 Amp		YES	96 ns		NO
M58WT064KT70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	67108864 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
PH28F320W30BD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B56				Not Qualified	BOTTOM	33554432 bit		4	NOR TYPE	.00005 Amp		YES	85 ns		NO
RD48F3000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO		BOTTOM	R-PBGA-B105				Not Qualified	BOTTOM	134217728 bit			NOR TYPE	.00003 Amp		YES	96 ns		NO
M58WT064KB70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	67108864 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W320FT70ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	10 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	33554432 bit			NOR TYPE	.0001 Amp		YES	70 ns		YES
PH28F128W30BC90	Micron Technology	FLASH	INDUSTRIAL	60	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	8388608 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA60,9X10,30		Flash Memories	.75 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES		BOTTOM	R-PBGA-B60				Not Qualified	BOTTOM	134217728 bit		4	NOR TYPE	.00003 Amp		YES	90 ns		NO
M29W160FB80ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	16777216 bit			NOR TYPE	.0001 Amp		YES	80 ns		YES
RD48F3000M0YBC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO		BOTTOM	R-PBGA-B107				Not Qualified	BOTTOM	134217728 bit		16	NOR TYPE	.00003 Amp		YES	96 ns		NO
GT28F320C3TA100	Micron Technology	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.964 mm	Not Qualified	TOP	33554432 bit	2.7 V		NOR TYPE	.000025 Amp	7.286 mm	YES	100 ns	3	NO
GE28F256L18B85	Micron Technology	FLASH	OTHER	79	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,64K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA79,7X13,30		Flash Memories	.75 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B79				Not Qualified	BOTTOM	268435456 bit		4	NOR TYPE	.00011 Amp		YES	90 ns		NO
RD48F4000L0YTQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,64K		16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	268435456 bit		4	NOR TYPE			YES	85 ns		NO
RD4000L0YCQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,64K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	268435456 bit			NOR TYPE	.00011 Amp		YES	85 ns		NO
M58WR016KT7AZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	16777216 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W400FB70ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	AEC-Q100	BALL	PARALLEL	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	4194304 bit			NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W800FT5AZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	8388608 bit			NOR TYPE	.0001 Amp		YES	55 ns		YES
M29W160FT80ZA3SE6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	16777216 bit			NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W800FB5AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	8388608 bit			NOR TYPE	.0001 Amp		YES	55 ns		YES
M58WR032KB70ZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	33554432 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
M58WR032KT70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	33554432 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
M58WR016KT70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	16777216 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
GE28F640W30BC85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B56				Not Qualified	BOTTOM	67108864 bit		4	NOR TYPE	.000021 Amp		YES	85 ns		NO
M29W400FT7AZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	4194304 bit			NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W320FT80ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	33554432 bit			NOR TYPE	.0001 Amp		YES	80 ns		YES
GE28F320W30TC85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B56				Not Qualified	TOP	33554432 bit		4	NOR TYPE	.000021 Amp		YES	85 ns		NO
RD48F3000P0ZBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES		BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	134217728 bit		4	NOR TYPE	.000005 Amp		YES	85 ns		NO
PH28F320W30TC85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B56				Not Qualified	TOP	33554432 bit		4	NOR TYPE	.000021 Amp		YES	85 ns		NO
GT28F320C3TA110	Micron Technology	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.964 mm	Not Qualified	TOP	33554432 bit	2.7 V		NOR TYPE	.000025 Amp	7.286 mm	YES	110 ns	3	NO
M29W160FT70ZA3F6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	16777216 bit			NOR TYPE	.0001 Amp		YES	70 ns		YES
M58WR064KT70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	67108864 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
RD48F2000L0YUQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,64K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	4,63	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	67108864 bit			NOR TYPE	.00003 Amp		YES	85 ns		NO
M58WR032KT7AZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	33554432 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
PH28F640W30BD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B56				Not Qualified	BOTTOM	67108864 bit		4	NOR TYPE	.00005 Amp		YES	85 ns		NO
GE28F640W30BC70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B56				Not Qualified	BOTTOM	67108864 bit		4	NOR TYPE	.000021 Amp		YES	70 ns		NO
PC48F1000W0YC00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	40 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B44				Not Qualified	BOTTOM	33554432 bit		4	NOR TYPE	.000005 Amp		YES	60 ns		NO
RD48F4000L0YUQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,64K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		BOTTOM	R-PBGA-B88				Not Qualified	TOP	268435456 bit			NOR TYPE	.00011 Amp		YES	85 ns		NO
M29W800FT55ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	8388608 bit			NOR TYPE	.0001 Amp		YES	55 ns		YES
GT28F320C3BA100	Micron Technology	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.964 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		NOR TYPE	.000005 Amp	7.286 mm	YES	100 ns	3	NO
RC48F3000W0YU00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	40 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES		BOTTOM	R-PBGA-B44				Not Qualified	TOP	134217728 bit		4	NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W160FT80ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	16777216 bit			NOR TYPE	.0001 Amp		YES	80 ns		YES
PH28F640W30TC85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B56				Not Qualified	TOP	67108864 bit		4	NOR TYPE	.000021 Amp		YES	85 ns		NO
RD48F6000M0YBC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	512	NO		BOTTOM	R-PBGA-B107				Not Qualified	BOTTOM	1073741824 bit		16	NOR TYPE	.00003 Amp		YES	96 ns		NO
M58WT032KB70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	33554432 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO
M58WT064KB70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS		BALL	PARALLEL	4K,32K	70 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	67108864 bit		4	NOR TYPE	.00005 Amp		YES	70 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.