FBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Width	Qualification	Boot Block	Memory Density	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8C1115EBM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	BOTTOM	536870912 bit			240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8D3216UBC-DI07	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	33554432 bit				NOR TYPE	.000018 Amp		YES	70 ns	2.7	YES
K9F2808U0B-BCB0	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	16777216 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA48,6X8,30		Flash Memories	.75 mm	70 Cel	16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48			Not Qualified		134217728 bit	512	e0		SLC NAND TYPE	.00005 Amp			35 ns		NO
K8A6415EBC-HC7D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88		8 mm	Not Qualified	BOTTOM	67108864 bit	8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K9K1216U0C-GCB0	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	40 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1		Not Qualified		536870912 bit	256				.00005 Amp			45 ns		NO
K8P3215UQB-DC4BT	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	33554432 bit	8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8C5415EBM-FE1C0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	BOTTOM	268435456 bit			240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8P3315UQB-DI4B0	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM/TOP	33554432 bit	8			NOR TYPE	.00003 Amp		YES	60 ns		YES
K8C1215EBM-DE1DT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	536870912 bit				NOR TYPE	.00002 Amp		YES	110 ns		YES
K8A6415ETC-DC7ET	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88		8 mm	Not Qualified	TOP	67108864 bit	8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S2815ETC-DC7DT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	TOP	134217728 bit				NOR TYPE	.00005 Amp		YES	70 ns		YES
K9K1208D0C-HIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	2.7	NO	2.7	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		536870912 bit	512	e3			.00005 Amp			45 ns		NO
K8F5715EBM-SE1DT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5415EBM-FC1E0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	BOTTOM	268435456 bit			240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBC-SC7E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88		8 mm	Not Qualified	BOTTOM	67108864 bit	8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K9K1208U0C-GCB0T	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	40 mA	67108864 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel	64MX8	64M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1		Not Qualified		536870912 bit	512				.00005 Amp			30 ns		NO
K8D3216UBC-FC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	33554432 bit				NOR TYPE	.000018 Amp		YES	80 ns		YES
K8D6316UTM-FI07	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	TOP	67108864 bit				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8S6415ETB-FE7CT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	TOP	67108864 bit				NOR TYPE	.00005 Amp		YES	70 ns		YES
K8F5615EBM-DC1E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88			Not Qualified	BOTTOM	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S6415EBB-FE7BT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	67108864 bit				NOR TYPE	.00005 Amp		YES	88.5 ns		YES
K8C5715ETM-FC1C	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	TOP	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A2815EBM-LC7C	Samsung	FLASH	COMMERCIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64			Not Qualified	BOTTOM	134217728 bit				NOR TYPE	.00005 Amp		YES	70 ns		YES
K9K1208U0C-HCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	40 mA	67108864 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel	64MX8	64M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		536870912 bit	512	e3			.00005 Amp			45 ns		NO
K8C5615EBM-DC1C	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
KFG5616Q1M-DEBT	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	25 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		262144 bit	512	e3			.00005 Amp			14.5 ns		NO
K8F5615EBM-FE1FT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88			Not Qualified	BOTTOM	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
KFG1216Q2A-FEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B63	1		Not Qualified		536870912 bit	1K				.00005 Amp			11.5 ns		NO
K8P6415UQB-DI4DT	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	67108864 bit	8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8F1215ETM-DC1C	Samsung	FLASH	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64			Not Qualified	TOP	536870912 bit				NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S2815EBC-FC7C0	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	134217728 bit				NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P1615UQB-DI4CT	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	1MX16	1M	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM/TOP	16777216 bit	8			NOR TYPE	.00003 Amp		YES	65 ns		YES
K8C5415ETM-FC1FT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	TOP	268435456 bit			240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F1315ETM-FE1F	Samsung	FLASH	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64			Not Qualified	TOP	536870912 bit				NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S3215EBE-DE7B	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	33554432 bit				NOR TYPE	.00005 Amp		YES	90 ns		YES
K8P3215UQB-DI4DT	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3		Not Qualified	BOTTOM/TOP	33554432 bit	8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8D6316UBM-TI08	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	67108864 bit				NOR TYPE	.00003 Amp		YES	80 ns	2.7	YES
K8F5715EBM-SC1ET	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44			Not Qualified	BOTTOM	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F1315ETM-SE1E	Samsung	FLASH	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64			Not Qualified	TOP	536870912 bit				NOR TYPE	.00002 Amp		YES	110 ns		YES
KFG5616U1M-DEB	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	30 mA	16777216 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		262144 bit	512	e3			.00005 Amp			14.5 ns		NO
K8D3216UBC-LC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48			Not Qualified	BOTTOM	33554432 bit				NOR TYPE	.000018 Amp		YES	80 ns		YES
KFH4G16Q2M-DEB6S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	38 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		4294967296 bit	1K	e3		SLC NAND TYPE	.0001 Amp			76 ns		NO
K8C5715EBM-FE1D	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167			Not Qualified	BOTTOM	268435456 bit				NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K1208D0C-GIB0T	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	2.65	NO	2.65	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1		Not Qualified		536870912 bit	512				.00005 Amp			30 ns		NO
KFG1G16Q2A-DEB8	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	35 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63			Not Qualified		1073741824 bit	1K			SLC NAND TYPE	.00005 Amp			9 ns		NO
KFW8G16Q2M-DEB8S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K		536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	8K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1		Not Qualified		8589934592 bit	1K	e3		SLC NAND TYPE				76 ns		NO
K8D1716UTC-FI07T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3		Not Qualified	TOP	16777216 bit		e1		NOR TYPE	.000018 Amp		YES	70 ns		YES
K8C5415EBM-FE1E0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3		Not Qualified	BOTTOM	268435456 bit			240	NOR TYPE	.00002 Amp		YES	100 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.