LBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58BW016BT80ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016DB100ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DB80ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW32FB4ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	3.3	NO	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V		4				NOR TYPE	.00015 Amp	12 mm	YES	45 ns	3.3	NO
M58BW016DT100ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016FB7ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80		3.6 V	1.6 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW32FB5ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	2.7	NO	3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80		3.3 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.5 V		4				NOR TYPE	.00015 Amp	12 mm	YES	55 ns	3.3	NO
M58BW016BB90ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
S29GL256S11DHVV10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL01GS11FHB023	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL128S10FHIV13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL256S10FHB020	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	100 ns	3	YES
S29GL128S11DHVV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL128S10DHIV10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10DHIV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL01GS11DHB010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL128S90DHA020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL256S10DHV013	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S90DHA023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL128S10FHIV10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL01GS10FHI013	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL01GS10FAI010	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL256S90FHI023	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
S29GL256S10FHB010	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	100 ns	3	YES
S29GL256S10FAIV13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL512S10FHI013	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL512S11DHAV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL01GS11DHAV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL128S11FHVV13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL01GS10FAI023	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL512S11FHB010	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL01GS11DHAV10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL128S10DHB013	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL01GS11DHB023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL256S11DHBV23	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL512S12FHBV13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29GL128S90FHI023	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
S29GL512S12FHBV10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29GL01GS11DHA020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL128S90FHA013	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
S29GL256S11FHBV20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL512S10FHI020	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL01GS11FHA010	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	110 ns	3	YES
S29GL512S12DHBV13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL128S11FHVV10	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL256S10FAIV23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL01GS11FHB020	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL01GS11FHIV13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	110 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.